DMP6023LFGQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = -10V -7.7A 33mΩ @ VGS = -4.5V -6.8A V(BR)DSS -60V Features and Benefits Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AECQ101, supported by a PPAP and is ideal for use in: Backlighting Power Management Functions DC-DC Converters Case: POWERDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) POWERDI®3333-8 D Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMP6023LFGQ-7 DMP6023LFGQ-13 Notes: Case POWERDI®3333-8 POWERDI®3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION Product Summary P23 P23 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 13 = 2013) WW = Week Code (01 ~ 53) POWERDI is a registered trademark of Diodes Incorporated. DMP6023LFGQ Document number: DS38647 Rev. 1 - 2 1 of 7 www.diodes.com March 2016 © Diodes Incorporated DMP6023LFGQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = -10V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C t<10s Value -60 ±20 -7.7 -6.2 ID A -10.3 -8.2 -55 -2.2 -35.5 62.9 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH Units V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 6) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) Value 1.0 123 69 2.1 60 34 6.3 -55 to +150 RJA Total Power Dissipation (Note 7) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range RJA RJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) -3 25 33 -1.2 V Static Drain-Source On-Resistance -1 — mΩ VDS = VGS, ID = -250μA VGS = -10V, ID = -5A VGS = -4.5V, ID = -4A VGS = 0V, IS = -1A Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD — — — — -0.7 Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — — 2569 179 143 8 26.5 53.1 7.1 12.6 6 7.1 110 62 20 — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns QRR — 14 — nC V Test Condition VDS = -30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -5A VGS = -10V, VDS = -30V, RG = 3Ω, ID = -5A IF = -5A, di/dt = 100A/μs 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMP6023LFGQ Document number: DS38647 Rev. 1 - 2 2 of 7 www.diodes.com March 2016 © Diodes Incorporated DMP6023LFGQ 30.0 30 VGS = -10V VGS = -3.5V VGS = -5.0V 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = -4.5V VGS = -4.0V 15.0 VGS = -3.0V 10.0 VGS = -2.8V 5.0 20 15 10 TA = 150C 5 T A = 125 C TA = 85C TA = 25C T A = -55C 0 1 2 3 4 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.04 0.035 0.03 VGS = -4.5V 0.025 VGS = -10V 0.02 0.015 0.01 0.005 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.2 ID = -5.0A 0.18 0.16 ID = -4.0A 0.14 0.12 0.1 0.08 0.06 0.04 0.02 30 0 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2 0.05 VGS = -4.5V TA = 150C 1.8 T A = 125 C 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 R DS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 25.0 VDS = -5.0V TA = 85C 0.03 T A = 25C 0.02 TA = -55C 0.01 1.6 1.4 VGS = -4.5V ID = -5A 1.2 1 0.8 0.6 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 30 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMP6023LFGQ Document number: DS38647 Rev. 1 - 2 3 of 7 www.diodes.com March 2016 © Diodes Incorporated 0.05 )V ( E G A T L O V D L O H S E R H T E T A G , )H VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.045 0.04 0.035 VGS = -4.5V ID = -5A 0.03 0.025 0.02 0.015 0.01 T ( S G V 0.005 0 -50 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -ID =1mA -ID = 250µA -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 10000 30 CT, JUNCTION CAPACITANCE (pF) f = 1MHz IS, SOURCE CURRENT (A) 25 20 15 TA= 150 C TA= 125C 10 TA= 85C 5 TA= 25C TA= -55C Ciss 1000 Coss Crss 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 100 1.5 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 RDS(on) Limited 9 8 )A 10 ( T N E DC R R PW = 10s U 1 C PW = 1s N IA PW = 100ms R D PW = 10ms ,D I 0.1 T PW = 1ms J(max) = 150°C ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION DMP6023LFGQ 7 6 VDS = -30V ID = -5A 5 4 3 2 TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 1 0 0 5 10 15 20 25 30 35 40 45 50 55 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics 0.01 0.1 PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. DMP6023LFGQ Document number: DS38647 Rev. 1 - 2 4 of 7 www.diodes.com March 2016 © Diodes Incorporated DMP6023LFGQ r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R JA(t) = r(t) * R JA RJA = 127° 127癈 /W R C/W JA = Duty Cycle, D = t1/ t2 Single Pulse 0.001 1E-04 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance 100 1000 POWERDI is a registered trademark of Diodes Incorporated. DMP6023LFGQ Document number: DS38647 Rev. 1 - 2 5 of 7 www.diodes.com March 2016 © Diodes Incorporated DMP6023LFGQ Package Outline Dimensions ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. POWERDI®3333-8 A3 A1 A Seating Plane D L(4x) D2 1 Pin #1 ID E4 b2(4x) E E3 E2 L1(3x) 8 z(4x) POWERDI®3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 E3 0.79 0.89 0.84 E4 1.60 1.70 1.65 e 0.65 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm b e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. POWERDI®3333-8 X3 X2 8 Y2 X1 Y1 Y3 Y Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 1 X C POWERDI is a registered trademark of Diodes Incorporated. DMP6023LFGQ Document number: DS38647 Rev. 1 - 2 6 of 7 www.diodes.com March 2016 © Diodes Incorporated DMP6023LFGQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMP6023LFGQ Document number: DS38647 Rev. 1 - 2 7 of 7 www.diodes.com March 2016 © Diodes Incorporated