MBR8045 thru MBR80100R Naina Semiconductor Ltd. Schottky Power Diode, 80A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Test Conditions Parameter Symbol MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit Repetitive peak reverse voltage VRRM 45 60 80 100 V RMS reverse voltage VRMS 32 42 57 70 V VDC 45 60 80 100 V TC ≤ 120 C IF 80 80 80 80 A TC = 25oC IFSM 1000 1000 1000 1000 A VF 0.65 0.75 0.84 0.84 V 5 5 5 5 DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave o IF = 80 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC Forward voltage Reverse current IR mA 250 250 250 250 Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Symbol Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit o Rth(JC) 1.0 TJ Tstg -65 to 150 -65 to 175 Mounting torque (non-lubricated threads) F 4.0 Nm Approximate allowable weight W 17.0 g 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com C/W o C C o Naina Semiconductor Ltd. MBR8045 thru MBR80100R Package Outline ALL DIMENSIONS IN MM 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com