LANSDALE MC1490P Rf/if/audio amplifier wideband amplifier with agc Datasheet

ML1490
RF/IF/Audio Amplifier
Wideband Amplifier With AGC
Legacy Device: Motorola MC1490
The ML1490 is an integrated circuit featuring
wide–range AGC for use in RF/IF amplifiers and audio
amplifiers.
8
• High Power Gain:
50 dB Typ at 10 MHz
45 dB Typ at 60 MHz
35 dB Typ at 100 MHz
• Wide Range AGC: 60 dB Min, DC to 60 MHz
• 6.0 V to 15 V Operation, Single Polarity Supply
• Operating Temperature Range TA = –40° to +85°C
1
P DIP 8 = PP
PLASTIC PACKAGE
CASE 626
CROSS REFERENCE/ORDERING INFORMATION
MOTOROLA
LANSDALE
PACKAGE
P DIP 8
MC1490P
ML1490PP
Note: Lansdale lead free (Pb) product, as it
becomes available, will be identified by a part
number prefix change from ML to MLE.
Note: See Similar ML1350 For Possible Option
MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.)
Symbol
Value
Unit
VCC
+18
Vdc
VAGC
VCC
Vdc
Input Differential Voltage
VID
5.0
Vdc
Operating Temperature Range
TA
–40 to +85
°C
Tstg
–65 to +150
°C
TJ
+150
°C
Rating
Power Supply Voltage
AGC Supply
Storage Temperature Range
Junction Temperature
Representative Schematic Diagram
2
VCC
PIN CONNECTIONS
Output
(+)
Output
(–)
1
VCC
2
GND
3
6
Noninverting
Input
Inverting
Input
4
5
AGC
Input
8
7 Substrate
Ground
– +
(Top View)
1.5 k
VAGC
70
5.5 k 12.1 k
470
470
8 (+)
Outputs
(–)
1
2.0 k
5
(–)
(+)
4
45
Inputs
6
2.8 k
200 200 2.8 k
5.0 k
5.0 k
5.6 k
1.1 k 1.1 k
1.9k
8.4 k
200
Substrate
7
3
Pins 3 and 7 should both be connected to circuit ground.
Page 1 of 8
f = MHz
Typ
Parameter
1.4 k
66
SCATTERING PARAMETERS
(VCC = +12 Vdc, TA = +25°C, Zo = 50 Ω)
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Symbol
30
60
Unit
Input
Reflection
Coefficient
|S11|
θ11
0.95
–7.3
0.93
–16
–
deg
Output
Reflection
Coefficient
|S22|
θ22
0.99
–3.0
0.98
–5.5
–
deg
Forward
Transmission
Coefficient
|S21|
θ21
16.8
128
14.7
64.3
–
deg
Reverse
Transmission
Coefficient
S12
θ12
0.00048
84.9
0.00092
79.2
–
deg
Issue A
LANSDALE Semiconductor, Inc.
ML1490
ELECTRICAL CHARACTERISTICS (VCC = 12 Vdc, f = 60 MHz, BW = 1.0 MHz, TA = 25°C)
Characteristic
Figure
Symbol
Min
Typ
Max
Unit
Power Supply Current Drain
–
ICC
–
–
17
mA
AGC Range (AGC) 5.0 V Min to 7.0 V Max
19
MAGC
–60
–
–
dB
Output Stage Current (Sum of Pins 1 and 8)
–
IO
4.0
–
7.5
mA
Single–Ended Power Gain RS = RL = 50 Ω
19
GP
40
–
–
dB
Noise Figure RS = 50 Ohms
19
NF
–
6.0
–
dB
Power Dissipation
–
PD
–
168
204
mW
Figure 1. Unneutralized Power Gain versus
Frequency (Tuned Amplifier, See Figure 19)
Figure 2. Voltage Gain versus Frequency
(Video Amplifier, See Figure 20)
AC , SINGLE±ENDED VOLTAGE GAIN (dB)
G P , UNNEUTRALIZED GAIN (dB)
(SINGLE–ENDED OUTPUT)
70
VCC = 12 Vdc
60
50
40
30
20
10
0
10
20
50
100
200
RL = 1.0 k
40
30
RL = 100 Ω
20
10
0
RL = 10 Ω
0.1
1.0
10
100
1000
f, FREQUENCY (MHZ)
Figure 3. Dynamic Range: Output Voltage versus
Input Voltage (Video Amplifier, See Figure 20)
Figure 4. Voltage Gain versus Frequency
(Video Amplifier, See Figure 20)
50
VCC = 12 Vdc
V5(AGC) = 0 V
f = 1.0 MHz
AV , SINGLE VOLTAGE GAIN (dB)
5.0
1.0
0.5
RL = 1.0 k
0.1
100 Ω
0.05
10 Ω
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50 100
VCC = 6.3 Vdc
40
RL = 1.0 kΩ
30
100 Ω
20
10
0
0.3
en, INPUT VOLTAGE (mVRMS)
Page 2 of 8
VCC = 12 Vdc
f, FREQUENCY (MHZ)
10
V O, OUTPUT VOLTAGE (V RMS)
50
0.5 1.0
3.0 5.0
10
30
50
100
300
f, FREQUENCY (MHZ)
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Issue A
LANSDALE Semiconductor, Inc.
ML1490
Legacy Applications Information
f = 1.0 MHz
Rl = 1.0 Ω
40
35
AV
24
0
21
10
18
30
15
25
12
ICC
20
9.0
15
6.0
10
3.0
5.0
0
2.0
4.0
6.0
8.0
10
12
14
16
GR , GAIN REDUCTION (dB)
45
Figure 6. Typical Gain Reduction
versus AGC Voltage
I C , SUPPLY CURRENT (mAdc)
AV, SINGLE±ENDED VOLTAGE GAIN (dB)
Figure 5. Voltage Gain and Supply Current versus
Supply Voltage (Video Amplifier, See Figure 20)
VR(AGC)
RAGC
30
RAGC = 100 kΩ
40
50
60
80
0
3.0
6.0
9.0
0
50
10
40
100 < RAGC < 100 k
30
40
50
60
20
10
80
0
100
120
140 160
5.2
5.4
5.8
6.0
6.2
6.4
6.6
6.8
7.0
Figure 10. Noise Figure versus Frequency
10
80
9.0
70
f = 60 MHz
60
NF, NOISE FIGURE (dB)
Gp , POWER GAIN (dB)
5.6
+125°C
VR(AGC), AGC VOLTAGE (Vdc)
Figure 9. Power Gain versus Supply Voltage
(See Test Circuit, Figure 19)
50
GP
40
30
20
8.0
7.0
6.0
5.0
RS Optimized
for minimum NF
4.0
3.0
2.0
10
1.0
0
2.0
4.0
6.0
8.0
10
12
14
16
0
15
20
25
30 35 40
50
60 70 80 90 100
150
f, FREQUENCY (MHz)
VCC, POWER SUPPLY VOLTAGE (V)
Page 3 of 8
30
–55°C
VCC = 12 Vdc
f = 60 MHz
RAGC = 5.6 kΩ
IAGC AGC CURRENT (µA)
0
27
+75°C
–20
5.0
60
24
+25°C
80
40
21
0°C
–10
20
18
30
70
0
15
Figure 8. Fixed Tuned Power Gain Reduction versus
Temperature (See Test Circuit, Figure 19)
G p ,POWER GAIN (dB)
GR , GAIN REDUCTION (dB)
Figure 7. Typical Gain Reduction
versus AGC Current
–40 –20
12
VR(AGC), AGC VOLTAGE (Vdc)
VCC, SUPPLY VOLTAGE (V)
20
RAGC = 5.6 kΩ
RAGC = 0 Ω
70
0
5
MC1490P
20
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Issue A
LANSDALE Semiconductor, Inc.
ML1490
Legacy Applications Information
Figure 11. Noise Figure versus
Source Resistance
Figure 12. Noise Figure versus
AGC Gain Reduction
40
20
14
f = 105 MHz
12
10
f = 60 MHz
8.0
f = 30 MHz
6.0
4.0
30
25
20
15
Test circuit has tuned input
providing a source resistance
optimized for best noise figure.
10
5
2.0
0
f = 30 MHz
BW = 1.0 MHz
35
VCC = 12 Vdc
16
NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
18
100
200
400 600
1.0 k
2.0 k
4.0 k
0
10 k
0
–10
–20
RS, SOURCE RESISTANCE (Ω)
–30
–40
–50
–60
–70
–80
GR, GAIN REDUCTION (dB)
Figure 13. Harmonic Distortion versus AGC Gain
Reduction for AM Carrier (For Test Circuit, See Figure 14)
HARMONIC DISTORTION IN DETECTED
MODULATION (%)
40
f = 10.7 MHz
Modulation: 90 % AM, f m = 1.0 kHz
Load at Pin 8 = 2.0 kΩ
EO = peak–to–peak envelope of
modulated 10.7 MHz carrier at Pin 8
35
30
25
20
760 mVpp
EO = 2400 mVpp
15
240 mVpp
10
5.0
0
0
10
20
30
40
50
60
70
80
GR, GAIN REDUCTION (dB)
Figure 14. 10.7 MHz Amplifier Gain
55 dB, BW
7
0.002
6
VAGC
10.7 MHz
(50 Ω Source)
5
5.6 k
4
82 pF
L1
8
ML1490
3
L1 = 24 turns, #22 AWG wire
on a T12–44 micro metal
Toroid core (–124 pF)
1
36 pF
50 Ω Load
L2
RFC
2
0.002
50–150 pF
Page 4 of 8
100 kHz
+12 Vdc
0.002
L2 = 20 turns, #22 AWG wire
on a T12–44 micro metal
Toroid core (–100 pF)
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Issue A
LANSDALE Semiconductor, Inc.
ML1490
Legacy Applications Information
Figure 15. S11 and S22, Input and Output
Reflection Coefficient
Figure 17. S21, Forward Transmission
Coefficient (Gain)
70 MHz
80 MHz
60 MHz
Figure 16. S11 and S22, Input and Output
Reflection Coefficient
Figure 18. S12, Reverse Transmission
Coefficient (Feedback)
10 100 MHz
5.0
120 MHz
150 MHz
50 MHz
5.0
200 MHz
40 MHz
10
30 MHz
20 MHz
Page 5 of 8
15
10 MHz
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Issue A
LANSDALE Semiconductor, Inc.
ML1490
Legacy Applications Information
Figure 19. 60 MHz Power Gain Test Circuit
0.0001
µF
C3
6
L1
Input
(50 Ω)
C1
ML1490
5
Output
(50 Ω)
10 k
VR(AGC)
VR(AGC)
L2
5.6 k
1.0 µF
ei
3
7
6
RL
ML1490
1
2
4
1.0 µF
3
0.001 µF
2
+12 Vdc
+12 Vdc
0.001 µF
0.001 µF
VR(AGC)
eo
8
5
1
4
RAGC
C4
8
VAGC
0.001
µF
1.0 µF
Shield
7
C2
Figure 20. Video Amplifier
L1 = 7 turns, #20 AWG wire, 5/16" Dia.,5/8" long
L2 = 6 turns, #14 AWG wire, 9/16" Dia.,3/4" long
C1,C2,C3 = (1–30) pF
C4 = (1–10) pF
Figure 21. 30 MHz Amplifier
(Power Gain = 50 dB, BW
1.0 MHz)
0.002 µF
6
(1 – 30) pF
Input
(50 Ω)
38 pF
5
L1
VAGC
VAGC ≈ 6.0 V
7
Input from
local oscillator
(70 MHz)
T1
8
C2
ML1490
RL = 50 Ω
1
2
4 3
0.002 µF
5.6 k
Figure 22. 100 MHz Mixer
1 – 10 pF
10 µH
5
100
(1 – 10) pF
6
Signal Input
(100 MHz)
(1 – 30) pF
(1 – 10) pF
(1 – 30) pF
8
ML1490
L1 4
3
0.002 µF
+12 Vdc
VR(AGC)
7
2
IF Output
(30 MHz)
L2
1
+12 Vdc
10 µH
0.002 µF
L1 = 5 turns, #16 AWG wire, 1/4", ID Dia., 5/8" long
L2 = 16 turns, #20 AWG wire on a Toroid core, (T44–6).
L1 = 12 turns, #22 AWG wire on a Toroid core,
(T37–6 micro metal or equiv).
T1: Primary = 17 turns, #20 AWG wire on a Toroid core, (T44–6).
Secondary = 2 turns, #20 AWG wire.
Figure 23. Two–Stage 60 MHz IF Amplifier (Power Gain 80 dB, BW 1.5 MHz)
10 k
VR(AGC)
5.1 k
Input
(50 Ω)
24 pF
4
200 µH
5
ML1490
2
39 pF
RFC
T2
8
Output
(50 Ω)
ML1490
6
0.002 µF
10 µH
Shield
7
4
5
1.0 k
1 (1–10) pF
3
0.002 µF
T1 0.002 µF
8
6
(1–10) pF
(1–10) pF
Shield
7
1 (1–10) pF
3
2
RFC
0.001 µF
+12 Vdc
T1: Primary Winding = 15 turns, #22 AWG wire, 1/4" ID Air Core
Secondary Winding = 4 turns, #22 AWG wire,
Coefficient of Coupling ≈ 1.0
Page 6 of 8
T2: Primary Winding = 10 turns, #22 AWG wire, 1/4" ID Air Core
Secondary Winding = 2 turns, #22 AWG wire,
Coefficient of Coupling ≈ 1.0
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Issue A
LANSDALE Semiconductor, Inc.
ML1490
DESCRIPTION OF SPEECH COMPRESSOR
Table 1. Distortion versus Frequency
The amplifier drives the base of a PNP transistor operating
common–emitter with a voltage gain of approximately 20. The
control R1 varies the quiescent Q point of this transistor so
that varying amounts of signal exceed the level Vr. Diode D1
rectifies the positive peaks of Q1's output only when these
peaks are greater than Vr  7.0 V. The resulting output is filtered by Cx, Rx.
Rx controls the charging time constant or attack time. Cx is
involved in both charge and discharge. R2 (the 150 k and
input resistance of the emitter–follower Q2) controls the decay
time. Making the decay long and attack short is accomplished
by making Rx small and R2 large. (A Darlington emitter–follower may be needed if extremely slow decay times are
required.)
The emitter–follower Q2 drives the AGC Pin 5 of the
ML1490PP and reduces the gain. R3 controls the slope of signal compression.
Frequency
Distortion
Distortion
10 mV ei
100 mV ei
10 mV ei
100 mV ei
100 Hz
3.5%
12%
15%
27%
300 Hz
2%
10%
6%
20%
1.0 kHz
1.5%
8%
3%
9%
10 kHz
1.5%
8%
1%
3%
100 kHz
1.5%
8%
1%
3%
Notes 1 and 2
Notes:
(1)
(2)
Decay = 300 ms
Attack = 20 ms
Cx = 7.5 µF
Rx = 0 (Short)
Notes 3 and 4
(3)
(4)
Decay = 20 ms
Attack = 3.0 ms
Cx = 0.68 µF
Rx = 1.5 kΩ
Figure 24. Speech Compressor
+12 V
25 µF
0.001
1.0 k
1.0 k
5
15 µF
4
Input
10 µF
2
R3
15 k
3
7
+12 V
220
+12 V
Page 7 of 8
Rx
150 k
+12 V
2.2 k
Q1
2N3906
R2
Q2
2N3904
4.7 k
10 µF
8
ML1490
6
15 µF
Output
1
Cx
D1
6.8 k
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Vr
33 k
R1
100 k
Issue A
LANSDALE Semiconductor, Inc.
ML1490
OUTLINE DIMENSIONS
8
P DIP = PP
(ML1490PP)
PLASTIC PACKAGE
CASE 626–05
ISSUE K
5
–B–
1
4
F
–A–
NOTE 2
L
C
J
–T–
N
SEATING
PLANE
D
H
M
K
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
DIM
A
B
C
D
F
G
H
J
K
L
M
N
MILLIMETERS
MIN
MAX
9.40
10.16
6.10
6.60
3.94
4.45
0.38
0.51
1.02
1.78
2.54 BSC
0.76
1.27
0.20
0.30
2.92
3.43
7.62 BSC
–––
0.76
1.01
INCHES
MIN
MAX
0.370
0.400
0.240
0.260
0.155
0.175
0.015
0.020
0.040
0.070
0.100 BSC
0.030
0.050
0.008
0.012
0.115
0.135
0.300 BSC
–––
0.030
0.040
G
0.13 (0.005)
M
T A
M
B
M
Lansdale Semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Lansdale does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights nor the rights of others. “Typical” parameters which
may be provided in Lansdale data sheets and/or specifications can vary in different applications, and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by the customer’s
technical experts. Lansdale Semiconductor is a registered trademark of Lansdale Semiconductor, Inc.
Page 8 of 8
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Issue A