Rohm EMF9 Power management (dual transistors) Datasheet

EMF9
Transistors
Power management (dual transistors)
EMF9
2SC5585 and 2SK3019 are housed independently in a EMT6 package.
!Application
Power management circuit
!Structure
Silicon epitaxial planar transistor
ROHM : EMT6
(5)
(2)
0.5 0.5
1.0
1.6
(3)
(4)
(1)
1.2
1.6
0.5
(6)
0.13
!Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
0.22
!External dimensions (Units : mm)
Each lead has
same dimensions
Abbreviated symbol : F9
!Equivalent circuits
(3)
(2)
(1)
Tr1
Tr2
(4)
(5)
(6)
!Packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMF9
EMT6
F9
T2R
8000
1/5
EMF9
Transistors
!Absolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Collector current
ICP
Tj
Junction temperature
Tstg
Range of storage temperature
Limits
15
12
6
500
1.0
150
−55~+150
Unit
V
V
V
mA
A
°C
°C
Limits
30
±20
100
200
100
200
150
−55~+150
Unit
V
V
mA
mA
mA
mA
°C
°C
Symbol
Limits
Unit
PD
150(TOTAL)
∗
∗ Single pulse PW=1ms
Tr2
Symbol
Parameter
VDSS
Drain-source voltage
VGSS
Gate-source voltage
ID
Continuous
Drain current
IDP
Pulsed
IDR
Continuous
Reverse drain
current
IDRP
Pulsed
Tch
Channel temperature
Tstg
Range of storage temperature
∗
∗
∗ PW≤10ms Duty cycle≤50%
Tr1, Tr2
Parameter
Total power dissipation
mW ∗
∗ 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
!Electrical characteristics (Ta=25°C)
Tr1
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
12
15
6
−
−
−
270
−
−
Typ.
−
−
−
−
−
100
−
320
7.5
Max.
−
−
−
100
100
250
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=1mA
IC=10µA
IE=10µA
VCB=15V
VEB=6V
IC=200mA, IB=10mA
VCE=2V, IC=10mA
VCE=2V, IE=−10mA, f=100MHz
VCB=10V, IE=0mA, f=1MHz
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
Min.
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1.0
1.5
8
13
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
Conditions
VGS=±20V, VDS=0V
ID=10µA, VGS=0V
VDS=30V, VGS=0V
VDS=3V, ID=100µA
ID=10mA, VGS=4V
ID=1mA, VGS=2.5V
VDS=3V, ID=10mA
Tr2
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
RDS(on)
|Yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=5V, VGS=0V, f=1MHz
ID=10mA, VDD 5V,
VGS=5V, RL=500Ω,
RGS=10Ω
2/5
EMF9
Transistors
0.2
Ta=25°
10
0.4
0.6
0.8
1.0
1.2
1.4
1
10
BASE TO EMITTER VOLTAGE : VBE (V)
100
Ta=125°C
25°C
−40°C
10
1
1
10
100
1000
1000
1000
IC/IB=20
Pulsed
Ta=25°C
1000
Ta=−40°C
Ta=125°C
100
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
100
10000
IC/IB=20
Pulsed
BASER SATURATION VOLTAGE : VBE (sat) (mV)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
Fig.1 Grounded emitter propagation
characteristics
1000
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
Ta=−40°C
100
1
0
Fig.2 DC current gain vs.
collector current
Ta=25°C
Fig.5 Base-emitter saturation voltage
vs. collector current
1000
Ta=25°C
Pulsed
100
IC/IB=50
10
IC/IB=20
IC/IB=10
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
1000
TRANSITION FREQUENCY : fT (MHz)
DC CURRENT GAIN : hFE
C
Ta= −40°
C
°C
1
VCE=2V
Pulsed
Ta=125°C
100
10
COLLECTOR CURRENT : IC (mA)
1000
VCE=2V
Pulsed
Ta=12
5
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
!Electrical characteristic curves
Tr1
VCE=2V
Ta=25°C
Pulsed
100
10
1
1
10
100
1000
EMITTER CURRENT : IE (mA)
Fig.6 Gain bandwidth product
vs. emitter current
IE=0A
f=1MHz
Ta=25°C
100
Cib
10
1
0.1
Cob
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
3/5
EMF9
Transistors
20m
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
0.2m
0.1m
0
1
3
2
1.5
1
0.5
0
−50 −25
4
VGS=2.5V
Pulsed
10
5
2
1
0.5
0.001 0.002
0.005 0.01 0.02
0.05
0.1
0.2
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
Ta=−25°C
25°C
75°C
125°C
0.01
0.005
0.002
0.0005 0.001 0.002
0.005 0.01 0.02
10
5
2
1
0.5
0.001 0.002
5
ID=0.05A
10
15
0.05 0.1 0.2
0.5
DRAIN CURRENT : ID (A)
Fig.15 Forward transfer admittance vs.
drain current
200m
9
50m
Ta=125°C
75°C
25°C
−25°C
5m
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
0.5
7
ID=100mA
6
ID=50mA
5
4
3
2
1
0
25
50
75
100 125
150
CHANNEL TEMPERATURE : Tch (°C)
20m
10m
0.2
VGS=4V
Pulsed
8
0
−50 −25
20
VGS=0V
Pulsed
100m
0.05 0.1
Fig.11 Static drain-source on-state
resistance vs. drain current ( Ι )
ID=0.1A
5
0.005 0.01 0.02
DRAIN CURRENT : ID (A)
Fig.13 Static drain-source on-state
resistance vs. gate-source
voltage
REVERSE DRAIN CURRENT : IDR (A)
VDS=3V
Pulsed
0.02
0.001
0.0001 0.0002
Ta=125°C
75°C
25°C
−25°C
20
GATE-SOURCE VOLTAGE : VGS (V)
0.2
0.05
125 150
10
0
0
0.5
Fig.12 Static drain-source on-state
resistance vs. drain current ( ΙΙ )
0.1
100
Ta=25°C
Pulsed
DRAIN CURRENT : ID (A)
0.5
75
15
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
20
50
Fig.10 Gate threshold voltage vs.
channel temperature
Fig.9 Typical transfer characteristics
Ta=125°C
75°C
25°C
−25°C
25
0
VGS=4V
Pulsed
CHANNEL TEMPERATURE : Tch (°C)
GATE-SOURCE VOLTAGE : VGS (V)
50
50
VDS=3V
ID=0.1mA
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
DRAIN CURRENT : ID (A)
50m
2
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
VDS=3V
Pulsed
100m
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.16 Reverse drain current vs.
source-drain voltage ( Ι )
Fig.14 Static drain-source on-state
resistance vs. channel
temperature
REVERSE DRAIN CURRENT : IDR (A)
200m
GATE THRESHOLD VOLTAGE : VGS(th) (V)
Tr2
200m
Ta=25°C
Pulsed
100m
50m
20m
VGS=4V
10m
0V
5m
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.17 Reverse drain current vs.
source-drain voltage ( ΙΙ )
4/5
EMF9
Transistors
50
Ciss
10
5
Coss
Crss
2
1
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
Pulsed
tf
500
SWITHING TIME : t (ns)
20
CAPACITANCE : C (pF)
1000
Ta=25°C
f=1MHZ
VGS=0V
td(off)
200
100
50
20
tr
td(on)
10
5
0.5
0.1
0.2
0.5
1
2
5
10
20
50
2
0.1 0.2
0.5
1
2
5
10
20
50
100
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
Fig.18 Typical capacitance vs.
drain-source voltage
Fig.19 Switching characteristics
5/5
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