ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS(ON)max 0.085 V : ETS,typ TBD μJ Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory) • Available Screening: - MIL-PRF-19500 Equivalent - Space Level - MIL-STD-750 Methods & Conditions • Inherent Radiation Tolerance >100K TID • Positive Temperature Coefficient for Ease of Paralleling • Extremely Fast Switching with No “Tail” Current at 150°C • 1200 Volt Drain-Source Blocking Voltage 4 • RDS(on)max of 0.085 • Voltage Controlled • Low Gate Charge • Low Intrinsic Capacitance D (2,4) G (1) APPLICATIONS: • Satellite Solar Inverters TO-258 • Mil Spec Power Supplies - Switch Mode - Uninterrupted • Jet Engine Electronics • Down-hole Electronics (Motor / Compressor Control) S (3) Internal Schematic 123 Non-isolated tab version shown. For isolated tab version, tab (4) is No Connect. MAXIMUM RATINGS Parameter Symbol ID,Tj=100 Conditions Tj=100°C Value 52 ID,Tj=150 Tj=150°C 43 PulsedDrainCurrent(1) ShortCircuitWithstandTime IDM Tc=25°C 75 A tSC VDD<800V,TC<125°C 50 μS PowerDissipation PD Tc=25°C 114 W GateͲSourceVoltage VGS ContinuousDrainCurrent OperatingandStorageTemperature AC (2) Ͳ15to+15 Tj,Tj,stg Tsold LeadTemperatureforSoldering 1/8"fromcase<10s (1)Limitedbypulsewidth (2)RgEXT=1ohm,tp<200ns,seeFigure5forstaticconditions Unit A V Ͳ55to+200* o 260 o C C *Consultfactoryfor260OC THERMAL CHARACTERISTICS Value Parameter ThermalResistance,junctionͲtoͲcase ThermalResistance,junctionͲtoͲambient ASJD1200R085 Rev. 0.1 06/11 Symbol Rth,JC Typ Ͳ Max TBD Rth,JA Ͳ TBD Unit °C/W For more products and information, please visit our website at www.micross.com Micross Components reserves the right to change products or specifications without notice. 1 ADVANCE INFORMATION SiC JFET ASJD1200R085 ELECTRICAL CHARACTERISTICS Parameter Conditions Min Value Typ Max VGS=Ͳ15V,ID=600ʅA 1200 Ͳ Ͳ Ͳ 1 10 Ͳ 10 200 Symbol Unit OffCharacteristics DrainͲSourceBlockingVoltage BVDS VDS=1200V,VGS=Ͳ15V, TotalDrainLeakageCurrent IDSS Tj=25oC VDS=1200V,VGS=Ͳ15V, o TotalGateReverseLeakage IGSS Tj=150 C VGS=Ͳ15V,VDS=0V VGS=Ͳ15V,VDS=1200V V μA Ͳ Ͳ0.1 Ͳ0.3 Ͳ Ͳ0.1 Ͳ Ͳ 0.075 0.085 Ͳ 0.14 Ͳ mA OnCharacteristics GateThresholdVoltage VGS(th) ID=43A,VGS=2V, Tj=25°C ID=43A,VGS=2V, Tj=100°C VDS=1V,ID=34mA Ͳ6.00 Ͳ Ͳ4.00 V GateForwardCurrent IGFWD VGS=2V Ͳ 220 Ͳ mA RG f=1MHz,drainͲsourceshorted Ͳ 8 Ͳ : RG(on) VGS>2.7V;SeeFigure5 Ͳ 0.5 Ͳ : Ͳ 670 Ͳ Ͳ 103 Ͳ Ͳ 97 Ͳ Ͳ 60 Ͳ DrainͲSourceOnͲresistance GateResistance RDS(on) DynamicCharacteristics InputCapacitance Ciss OutputCapacitance Coss ReverseTransferCapacitance Crss EffectiveOutputCapacitance, energyrelated Co(er) : VDD=100V VDS=0Vto600V, VGS=0V SwitchingCharacteristics TurnͲOnDelay ton Ͳ TBD Ͳ RiseTime tr Ͳ TBD Ͳ TurnͲOffDelay toff Ͳ TBD Ͳ Ͳ TBD Ͳ Ͳ TBD Ͳ Ͳ TBD Ͳ FallTime tf VDS=600V,ID=40A, InductiveLoad,TJ=25oC GateDriver=+15V,Ͳ15V RgEXT=5ohm TurnͲOnEnergy Eon TurnͲOffEnergy Eoff TotalSwitchingEnergy Ets Ͳ TBD Ͳ TurnͲOnDelay ton Ͳ TBD Ͳ RiseTime tr Ͳ TBD Ͳ TurnͲOffDelay toff Ͳ TBD Ͳ FallTime tf Ͳ TBD Ͳ Ͳ TBD Ͳ Ͳ TBD Ͳ TurnͲOnEnergy Eon TurnͲOffEnergy Eoff VDS=600V,ID=40A, o InductiveLoad,TJ=150 C GateDriver=+15V,Ͳ15V RgEXT=5ohm TotalSwitchingEnergy Ets Ͳ TBD Ͳ TotalGateCharge Qg Ͳ 30 Ͳ GateͲSourceCharge Qgs Ͳ 1 Ͳ GateͲDrainCharge Qgd Ͳ 24 Ͳ ASJD1200R085 Rev. 0.1 06/11 VDS=600V,ID=40A, VGS=+2.5V pF ns μJ ns μJ nC Micross Components reserves the right to change products or specifications without notice. 2 ADVANCE INFORMATION SiC JFET ASJD1200R085 Figure 1. Typical Output Characteristics ID = f(VDS); Tj = 25°C; parameter: VGS Figure 2. Typical Output Characteristics ID = f(VDS); Tj = 100°C; parameter: VGS 20V 60 10V ID, Drain-Source Current (A) ID, Drain-Source Current (A) 45 70 0.0 V 50 -1.0 V 40 30 -2.0 V 20 10 30 -1.0 V 25 -2.0 V 20 15 10 5 0 0 0 2 4 VDS, Drain-Source Voltage (V) 0 6 Figure 3. Typical Output Characteristics ID = f(VDS); Tj = 150°C; parameter: VGS 35 25 -1.0 V 20 -2.0 V 15 10 5 60 50 40 30 20 10 0 0 0 1 2 3 4 5 -4.00 6 -2.00 VDS, Drain-Source Voltage (V) RDS(on), Drain-Source On-resistance (ȍ) 8 o 6 150 C 4 25oC 2 0.30 150oC 0 2 3 4 5 6 0.20 25oC 0.10 0.00 1.5 2.0 2.5 1.00 150oC 100oC 0.10 25oC 0.01 0 3.0 20 40 60 80 ID, Drain Current (A) VGS, Gate-Source Voltage (V) ASJD1200R085 Rev. 0.1 06/11 2.00 Figure 6. Drain-Source On-resistance RDS(on) = f(ID); VGS = 2.0; parameter: Tj 0.50 0.40 0.00 VGS, Gate-Source Voltage (V) Figure 5. Gate-Source Current IGS = f(VGS); parameter: Tj IGS, Gate-Source Current (A) 6 70 2.0 V 1.0 V 0.0 30 2 4 VDS, Drain-Source Voltage (V) Figure 4. Typical Transfer Characteristics ID = f(VGS); VDS = 5V ID, Drain-Source Current (A) ID, Drain-Source Current (A) 35 2.0 V 1.0 V 0.0 V 40 Micross Components reserves the right to change products or specifications without notice. 3 ADVANCE INFORMATION SiC JFET ASJD1200R085 0.18 Figure 8. Drain-Source On-resistance RDS(ON) = f(VGS); Tj = 25oC 0.0V RDS(on), Drain-Source On-resistance (ȍ) RDS(on), Drain-Source On-resistance (ȍ) Figure 7. Drain-Source On-resistance RDS(ON) = f(Tj); parameter: IGS 1.0V 0.16 2.0V 0.14 0.12 0.10 0.08 0.06 0 25 50 75 100 125 150 175 0.076 0.074 0.072 0.070 0.068 0.066 0.064 0.062 0.060 -1.0 Tj, Junction Temperature (°C) Figure 9. Typical Capacitance C = f(VDS); VGS = 0 V; f = 1 MHz VGS, Gate-Source Voltage (V) C, Capacitance (pF) Ciss 1.E+02 Coss Crss 1.E+01 1.E+00 2.5 2.0 1.5 1.0 0.5 0.0 0 300 600 900 1200 0 VDS, Drain-Source Voltage (V) 20 30 Figure 12. Drain-Source Leakage ID = f(VDS); VGS = 0V; parameter: Tj 1E-04 -1.5mV/oC -1.00 ID, Drain Leakage Current (A) VTH, Gate Threshold Voltage (V) 0.00 10 Qg, Total Gate Charge (nC) Figure 11. Gate Threshold Voltage Vth = f(Tj) -2.00 Max -4.00 -5.00 Min -7.00 150oC 100oC 1E-05 25oC 1E-06 1E-07 1E-08 -8.00 0 50 100 150 0 200 o Tj, Junction Temperature ( C) ASJD1200R085 Rev. 0.1 06/11 2.0 3.0 1.E+03 -6.00 1.0 Figure 10. Gate Charge Qg = f(VGS); VDS = 600V; ID = 5A, Tj = 25oC 1.E+04 -3.00 0.0 VGS, Gate-Source Voltage (V) 300 600 900 1200 BVDS, Drain-Source Blocking Voltage (V) Micross Components reserves the right to change products or specifications without notice. 4 ADVANCE INFORMATION SiC JFET ASJD1200R085 Figure 13. Transient Thermal Impedance Zth(jc) = f(tP); parameter: Duty Ratio Zth(jc), Transient Thermal Impedance (°C/W) 1.E+01 1.E+00 0.5 0.3 1.E-01 1.E-02 0.1 0.05 0.02 0.01 single 1.E-03 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 tP, Pulse Width (s) ASJD1200R085 Rev. 0.1 06/11 Micross Components reserves the right to change products or specifications without notice. 5 ADVANCE INFORMATION SiC JFET ASJD1200R085 MECHANICAL DRAWING $IA "3# "3# 4YP NOTE: 1. Dimensions in mm (inches) 2. Controlling dimensions (inches) ORDERING INFORMATION BasePartNumber ASJD1200R085 Configuration Blank=NonͲisolatedTab S=IsolatedTab Package JunctionTemp.Range M=TOͲ258 Ͳ EL EX TempRanges: EL=ElevatedTemp.Range,Ͳ55oCto200oC(TJ) Processing Blank /V /S EX=ExtremeTemp.Range,Ͳ55oCto260oC(TJ)(consultfactory) Processing: ExamplePartNumbers: Blank=Commercial/StandardProcessing MILͲPRFͲ19500EquivalentProcessingAvailablePerSCD /V=JANTXMILͲPRFͲ19500Equivalent(futurestandardoffering) /S=JANSMILͲPRFͲ19500Equivalent(futurestandardoffering) ASJD1200R085SMͲEL ASJD1200R085MͲEX has commercial plastic versions of this product available. Please refer to the SemiSouth website http://www.semisouth.com/products/products.html for datasheet specifications and ordering information. The SemiSouth part number is SJDP120R085 and is supplied in a TO-247 plastic package. ASJD1200R085 Rev. 0.1 06/11 Micross Components reserves the right to change products or specifications without notice. 6 ADVANCE INFORMATION SiC JFET ASJD1200R085 DOCUMENT TITLE Normally-ON Trench Silicon Carbide Power JFET Rev # 0.0 History Initial Release Release Date December 2010 Status Advance Information 0.1 Replaced TO-257 package with TO-258 package June 2011 Advance Information ASJD1200R085 Rev. 0.1 06/11 Micross Components reserves the right to change products or specifications without notice. 7