Micross ASJD1200R085 Positive temperature coeffi cient for ease of paralleling Datasheet

ADVANCE INFORMATION SiC JFET
ASJD1200R085
Normally-ON Trench Silicon
Carbide Power JFET
BVDS
FEATURES:
ProductSummary
1200
RDS(ON)max
0.085
V
:
ETS,typ
TBD
μJ
Die Inside
• Hermetic TO-258 Packaging
• 200°C Maximum Operating Temperature (260oC Contact Factory)
• Available Screening:
- MIL-PRF-19500 Equivalent
- Space Level
- MIL-STD-750 Methods & Conditions
• Inherent Radiation Tolerance >100K TID
• Positive Temperature Coefficient for Ease of Paralleling
• Extremely Fast Switching with No “Tail” Current at 150°C
• 1200 Volt Drain-Source Blocking Voltage
4
• RDS(on)max of 0.085 
• Voltage Controlled
• Low Gate Charge
• Low Intrinsic Capacitance
D (2,4)
G (1)
APPLICATIONS:
• Satellite Solar Inverters
TO-258
• Mil Spec Power Supplies
- Switch Mode
- Uninterrupted
• Jet Engine Electronics
• Down-hole Electronics (Motor / Compressor Control)
S (3)
Internal Schematic
123
Non-isolated tab version shown.
For isolated tab version, tab (4)
is No Connect.
MAXIMUM RATINGS
Parameter
Symbol
ID,Tj=100
Conditions
Tj=100°C
Value
52
ID,Tj=150
Tj=150°C
43
PulsedDrainCurrent(1)
ShortCircuitWithstandTime
IDM
Tc=25°C
75
A
tSC
VDD<800V,TC<125°C
50
μS
PowerDissipation
PD
Tc=25°C
114
W
GateͲSourceVoltage
VGS
ContinuousDrainCurrent
OperatingandStorageTemperature
AC
(2)
Ͳ15to+15
Tj,Tj,stg
Tsold
LeadTemperatureforSoldering
1/8"fromcase<10s
(1)Limitedbypulsewidth
(2)RgEXT=1ohm,tp<200ns,seeFigure5forstaticconditions
Unit
A
V
Ͳ55to+200*
o
260
o
C
C
*Consultfactoryfor260OC
THERMAL CHARACTERISTICS
Value
Parameter
ThermalResistance,junctionͲtoͲcase
ThermalResistance,junctionͲtoͲambient
ASJD1200R085
Rev. 0.1 06/11
Symbol
Rth,JC
Typ
Ͳ
Max
TBD
Rth,JA
Ͳ
TBD
Unit
°C/W
For more products and
information, please visit our
website at www.micross.com
Micross Components reserves the right to change products or specifications without notice.
1
ADVANCE INFORMATION SiC JFET
ASJD1200R085
ELECTRICAL CHARACTERISTICS
Parameter
Conditions
Min
Value
Typ
Max
VGS=Ͳ15V,ID=600ʅA
1200
Ͳ
Ͳ
Ͳ
1
10
Ͳ
10
200
Symbol
Unit
OffCharacteristics
DrainͲSourceBlockingVoltage
BVDS
VDS=1200V,VGS=Ͳ15V,
TotalDrainLeakageCurrent
IDSS
Tj=25oC
VDS=1200V,VGS=Ͳ15V,
o
TotalGateReverseLeakage
IGSS
Tj=150 C
VGS=Ͳ15V,VDS=0V
VGS=Ͳ15V,VDS=1200V
V
μA
Ͳ
Ͳ0.1
Ͳ0.3
Ͳ
Ͳ0.1
Ͳ
Ͳ
0.075
0.085
Ͳ
0.14
Ͳ
mA
OnCharacteristics
GateThresholdVoltage
VGS(th)
ID=43A,VGS=2V,
Tj=25°C
ID=43A,VGS=2V,
Tj=100°C
VDS=1V,ID=34mA
Ͳ6.00
Ͳ
Ͳ4.00
V
GateForwardCurrent
IGFWD
VGS=2V
Ͳ
220
Ͳ
mA
RG
f=1MHz,drainͲsourceshorted
Ͳ
8
Ͳ
:
RG(on)
VGS>2.7V;SeeFigure5
Ͳ
0.5
Ͳ
:
Ͳ
670
Ͳ
Ͳ
103
Ͳ
Ͳ
97
Ͳ
Ͳ
60
Ͳ
DrainͲSourceOnͲresistance
GateResistance
RDS(on)
DynamicCharacteristics
InputCapacitance
Ciss
OutputCapacitance
Coss
ReverseTransferCapacitance
Crss
EffectiveOutputCapacitance,
energyrelated
Co(er)
:
VDD=100V
VDS=0Vto600V,
VGS=0V
SwitchingCharacteristics
TurnͲOnDelay
ton
Ͳ
TBD
Ͳ
RiseTime
tr
Ͳ
TBD
Ͳ
TurnͲOffDelay
toff
Ͳ
TBD
Ͳ
Ͳ
TBD
Ͳ
Ͳ
TBD
Ͳ
Ͳ
TBD
Ͳ
FallTime
tf
VDS=600V,ID=40A,
InductiveLoad,TJ=25oC
GateDriver=+15V,Ͳ15V
RgEXT=5ohm
TurnͲOnEnergy
Eon
TurnͲOffEnergy
Eoff
TotalSwitchingEnergy
Ets
Ͳ
TBD
Ͳ
TurnͲOnDelay
ton
Ͳ
TBD
Ͳ
RiseTime
tr
Ͳ
TBD
Ͳ
TurnͲOffDelay
toff
Ͳ
TBD
Ͳ
FallTime
tf
Ͳ
TBD
Ͳ
Ͳ
TBD
Ͳ
Ͳ
TBD
Ͳ
TurnͲOnEnergy
Eon
TurnͲOffEnergy
Eoff
VDS=600V,ID=40A,
o
InductiveLoad,TJ=150 C
GateDriver=+15V,Ͳ15V
RgEXT=5ohm
TotalSwitchingEnergy
Ets
Ͳ
TBD
Ͳ
TotalGateCharge
Qg
Ͳ
30
Ͳ
GateͲSourceCharge
Qgs
Ͳ
1
Ͳ
GateͲDrainCharge
Qgd
Ͳ
24
Ͳ
ASJD1200R085
Rev. 0.1 06/11
VDS=600V,ID=40A,
VGS=+2.5V
pF
ns
μJ
ns
μJ
nC
Micross Components reserves the right to change products or specifications without notice.
2
ADVANCE INFORMATION SiC JFET
ASJD1200R085
Figure 1. Typical Output Characteristics
ID = f(VDS); Tj = 25°C; parameter: VGS
Figure 2. Typical Output Characteristics
ID = f(VDS); Tj = 100°C; parameter: VGS
20V
60
10V
ID, Drain-Source Current (A)
ID, Drain-Source Current (A)
45
70
0.0 V
50
-1.0 V
40
30
-2.0 V
20
10
30
-1.0 V
25
-2.0 V
20
15
10
5
0
0
0
2
4
VDS, Drain-Source Voltage (V)
0
6
Figure 3. Typical Output Characteristics
ID = f(VDS); Tj = 150°C; parameter: VGS
35
25
-1.0 V
20
-2.0 V
15
10
5
60
50
40
30
20
10
0
0
0
1
2
3
4
5
-4.00
6
-2.00
VDS, Drain-Source Voltage (V)
RDS(on), Drain-Source On-resistance
(ȍ)
8
o
6
150 C
4
25oC
2
0.30
150oC
0
2
3
4
5
6
0.20
25oC
0.10
0.00
1.5
2.0
2.5
1.00
150oC
100oC
0.10
25oC
0.01
0
3.0
20
40
60
80
ID, Drain Current (A)
VGS, Gate-Source Voltage (V)
ASJD1200R085
Rev. 0.1 06/11
2.00
Figure 6. Drain-Source On-resistance
RDS(on) = f(ID); VGS = 2.0; parameter: Tj
0.50
0.40
0.00
VGS, Gate-Source Voltage (V)
Figure 5. Gate-Source Current
IGS = f(VGS); parameter: Tj
IGS, Gate-Source Current (A)
6
70
2.0 V
1.0 V
0.0
30
2
4
VDS, Drain-Source Voltage (V)
Figure 4. Typical Transfer Characteristics
ID = f(VGS); VDS = 5V
ID, Drain-Source Current (A)
ID, Drain-Source Current (A)
35
2.0 V
1.0 V
0.0 V
40
Micross Components reserves the right to change products or specifications without notice.
3
ADVANCE INFORMATION SiC JFET
ASJD1200R085
0.18
Figure 8. Drain-Source On-resistance
RDS(ON) = f(VGS); Tj = 25oC
0.0V
RDS(on), Drain-Source On-resistance (ȍ)
RDS(on), Drain-Source On-resistance (ȍ)
Figure 7. Drain-Source On-resistance
RDS(ON) = f(Tj); parameter: IGS
1.0V
0.16
2.0V
0.14
0.12
0.10
0.08
0.06
0
25
50
75
100
125
150
175
0.076
0.074
0.072
0.070
0.068
0.066
0.064
0.062
0.060
-1.0
Tj, Junction Temperature (°C)
Figure 9. Typical Capacitance
C = f(VDS); VGS = 0 V; f = 1 MHz
VGS, Gate-Source Voltage (V)
C, Capacitance (pF)
Ciss
1.E+02
Coss
Crss
1.E+01
1.E+00
2.5
2.0
1.5
1.0
0.5
0.0
0
300
600
900
1200
0
VDS, Drain-Source Voltage (V)
20
30
Figure 12. Drain-Source Leakage
ID = f(VDS); VGS = 0V; parameter: Tj
1E-04
-1.5mV/oC
-1.00
ID, Drain Leakage Current (A)
VTH, Gate Threshold Voltage (V)
0.00
10
Qg, Total Gate Charge (nC)
Figure 11. Gate Threshold Voltage
Vth = f(Tj)
-2.00
Max
-4.00
-5.00
Min
-7.00
150oC
100oC
1E-05
25oC
1E-06
1E-07
1E-08
-8.00
0
50
100
150
0
200
o
Tj, Junction Temperature ( C)
ASJD1200R085
Rev. 0.1 06/11
2.0
3.0
1.E+03
-6.00
1.0
Figure 10. Gate Charge
Qg = f(VGS); VDS = 600V; ID = 5A, Tj = 25oC
1.E+04
-3.00
0.0
VGS, Gate-Source Voltage (V)
300
600
900
1200
BVDS, Drain-Source Blocking Voltage (V)
Micross Components reserves the right to change products or specifications without notice.
4
ADVANCE INFORMATION SiC JFET
ASJD1200R085
Figure 13. Transient Thermal Impedance
Zth(jc) = f(tP); parameter: Duty Ratio
Zth(jc), Transient Thermal Impedance
(°C/W)
1.E+01
1.E+00
0.5
0.3
1.E-01
1.E-02
0.1
0.05
0.02
0.01
single
1.E-03
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
tP, Pulse Width (s)
ASJD1200R085
Rev. 0.1 06/11
Micross Components reserves the right to change products or specifications without notice.
5
ADVANCE INFORMATION SiC JFET
ASJD1200R085
MECHANICAL DRAWING
$IA
"3#
"3#
4YP
NOTE:
1. Dimensions in mm (inches)
2. Controlling dimensions (inches)
ORDERING INFORMATION
BasePartNumber
ASJD1200R085
Configuration
Blank=NonͲisolatedTab
S=IsolatedTab
Package
JunctionTemp.Range
M=TOͲ258 Ͳ
EL
EX
TempRanges:
EL=ElevatedTemp.Range,Ͳ55oCto200oC(TJ)
Processing
Blank
/V
/S
EX=ExtremeTemp.Range,Ͳ55oCto260oC(TJ)(consultfactory)
Processing:
ExamplePartNumbers:
Blank=Commercial/StandardProcessing
MILͲPRFͲ19500EquivalentProcessingAvailablePerSCD
/V=JANTXMILͲPRFͲ19500Equivalent(futurestandardoffering)
/S=JANSMILͲPRFͲ19500Equivalent(futurestandardoffering)
ASJD1200R085SMͲEL
ASJD1200R085MͲEX
has commercial plastic versions of this product available. Please refer to the SemiSouth website
http://www.semisouth.com/products/products.html for datasheet specifications and ordering information. The
SemiSouth part number is SJDP120R085 and is supplied in a TO-247 plastic package.
ASJD1200R085
Rev. 0.1 06/11
Micross Components reserves the right to change products or specifications without notice.
6
ADVANCE INFORMATION SiC JFET
ASJD1200R085
DOCUMENT TITLE
Normally-ON Trench Silicon Carbide Power JFET
Rev #
0.0
History
Initial Release
Release Date
December 2010
Status
Advance Information
0.1
Replaced TO-257 package
with TO-258 package
June 2011
Advance Information
ASJD1200R085
Rev. 0.1 06/11
Micross Components reserves the right to change products or specifications without notice.
7
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