SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB TYPICAL CHARACTERISTICS 200 1.0 VCE=1V VCE=1V 175°C VBE - (Volts) hFE -Gain 25°C -55°C 0.6 0.4 100°C 175°C 0.2 0.1 1 10 0 100 0.1 1 IC - (mA) IC - (mA) hFE v IC VBE(on) v IC 1500 1.2 VCE=6V f=100MHz 10 100 IE=0 f=1MHz CCB - (pF) fT - (MHz) 500 0.1 1 10 100 SYMBOL VALUE UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 2.5 V Continuous Collector Current IC 50 mA Power Dissipation Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 0.8 PARAMETER SYMBOL MIN. 0.6 Collector-Emitter Sustaining Voltage VCEO(SUS) 12 V IC= 3mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO 20 V IC= 1µA, IE=0 Emitter-Base Breakdown Voltage V(BR)EBO 2.5 V IE=10µA, IC=0 Collector Cut-Off Current ICBO µA µA VCB=15V, IE=0 VCB=15V, IE=0, Tamb=150°C Static Forward Current Transfer Ratio hFE Collector-Emitter Saturation Voltage VCE(sat) 0.4 V IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=10mA, IB=1mA Transition Frequency fT Collector-Base Capacitance Ccb Small Signal Current Gain hfe 0.4 0.2 0 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.0 1000 SOT23 ABSOLUTE MAXIMUM RATINGS. 50 0 B PARTMARKING DETAIL - 179 25°C 100°C 100 E C -55°C 0.8 150 FMMT5179 0 0.1 1 IC - (mA) VCB - (Volts) fT v IC CCB v VCB 10 30 Collector Base Time Constant rbCc Noise Figure NF Common-Emitter Amplifier Power Gain Gpe MAX. 0.02 1.0 25 900 250 IC=3mA, VCE=1V 2000 MHz IC=5mA, VCE=6V, f=100MHz 1 pF IE=0, VCB=10V, f=1MHz 25 300 3 14 ps IE=2mA, VCB=6V, f=31.9MHz 4.5 dB IC=1.5mA, VCE=6V RS=50Ω, f=200MHz dB IC=5mA, VCE=6V f=200MHz 15 Spice parameter data is available upon request for this device 3 - 170 UNIT CONDITIONS. 3 - 169 IC=2mA, VCE=6V, f=1KHz SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB TYPICAL CHARACTERISTICS 200 1.0 VCE=1V VCE=1V 175°C VBE - (Volts) hFE -Gain 25°C -55°C 0.6 0.4 100°C 175°C 0.2 0.1 1 10 0 100 0.1 1 IC - (mA) IC - (mA) hFE v IC VBE(on) v IC 1500 1.2 VCE=6V f=100MHz 10 100 IE=0 f=1MHz CCB - (pF) fT - (MHz) 500 0.1 1 10 100 SYMBOL VALUE UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 2.5 V Continuous Collector Current IC 50 mA Power Dissipation Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 0.8 PARAMETER SYMBOL MIN. 0.6 Collector-Emitter Sustaining Voltage VCEO(SUS) 12 V IC= 3mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO 20 V IC= 1µA, IE=0 Emitter-Base Breakdown Voltage V(BR)EBO 2.5 V IE=10µA, IC=0 Collector Cut-Off Current ICBO µA µA VCB=15V, IE=0 VCB=15V, IE=0, Tamb=150°C Static Forward Current Transfer Ratio hFE Collector-Emitter Saturation Voltage VCE(sat) 0.4 V IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=10mA, IB=1mA Transition Frequency fT Collector-Base Capacitance Ccb Small Signal Current Gain hfe 0.4 0.2 0 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.0 1000 SOT23 ABSOLUTE MAXIMUM RATINGS. 50 0 B PARTMARKING DETAIL - 179 25°C 100°C 100 E C -55°C 0.8 150 FMMT5179 0 0.1 1 IC - (mA) VCB - (Volts) fT v IC CCB v VCB 10 30 Collector Base Time Constant rbCc Noise Figure NF Common-Emitter Amplifier Power Gain Gpe MAX. 0.02 1.0 25 900 250 IC=3mA, VCE=1V 2000 MHz IC=5mA, VCE=6V, f=100MHz 1 pF IE=0, VCB=10V, f=1MHz 25 300 3 14 ps IE=2mA, VCB=6V, f=31.9MHz 4.5 dB IC=1.5mA, VCE=6V RS=50Ω, f=200MHz dB IC=5mA, VCE=6V f=200MHz 15 Spice parameter data is available upon request for this device 3 - 170 UNIT CONDITIONS. 3 - 169 IC=2mA, VCE=6V, f=1KHz