NTE NTE130 Silicon power transistor audio power amp, medium speed switch Datasheet

NTE130 (NPN) & NTE219 (PNP)
Silicon Power Transistor
Audio Power Amp, Medium Speed Switch
Description:
The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case
designed for general purpose switching and amplifier applications.
Features:
D DC Current Gain: hFE = 20 – 70 @ IC = 4A
D Collector–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A
D Excellent Safe Operating Area
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.657W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52°C/W
Electrical Characteristics: (TC =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 200mA, IB = 0, Note 1
60
–
–
V
Collector–Emitter Sustaining Voltage
VCER(sus) IC = 200mA, RBE = 100Ω, Note 1
70
–
–
V
Collector Cutoff Current
Emitter Cutoff Current
ICEO
VCE = 30V, IB = 0
–
–
0.7
mA
ICEX
VCE = 100V, VBE(off) = 1.5V
–
–
1.0
mA
VCE = 100V, VBE(off) = 1.5V, TC = +150°C
–
–
5.0
mA
VBE = 7V, IC = 0
–
–
5.0
mA
IEBO
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 4A, VCE = 4V
20
–
70
IC = 10A, VCE = 4V
5
–
–
IC = 4A, IB = 400mA
–
–
1.1
V
IC = 10A, IB = 3.3A
–
–
3.0
V
IC = 4A, VCE = 4V
–
–
1.5
V
ON Characteristics (Note 1)
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
VCE(sat)
Base–Emitter ON Voltage
VBE(on)
Second Breakdown
Second Breakdown Collector Current
with Base Forward Biased
Is/b
VCE = 40V, t = 1.0s; Nonrepetitive
2.87
–
–
A
Current Gain–Bandwidth Product
fT
IC = 500mA, VCE = 10V, f = 1MHz
2.5
–
–
MHz
Small–Signal Current Gain
hfe
IC = 1A, VCE = 4V, f = 1kHz
15
–
120
Small–Signal Current Gain Cutoff
Frequency
fhfe
VCE = 4V, IC = 1A, f = 1kHz
10
–
–
Dynamic Characteristics
kHz
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
Note 2. NTE130MP is a matched pair of NTE130 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 3. NTE219MCP is a matched complementary pair containing 1 each of NTE219 (PNP) and
NTE130 (NPN).
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case