Kersemi FQPF8N60C 600v n-channel mosfet Datasheet

FQP8N60C/FQPF8N60C
FQP8N60C/FQPF8N60C
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
• 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
transistors are produced using Corise Semiconductorÿs proprietary,
• Low Crss ( typical 12 pF)
planar stripe, DMOS technology.
• Fast switching
This advanced technology has been especially tailored to
• 100% avalanche tested
minimize on-state resistance, provide superior switching • Improved dv/dt capability
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
D
!
●
◀
G!
G DS
TO-220
TO-220F
GD S
FQP Series
▲
●
●
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP8N60C
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
FQPF8N60C
Units
V
7.5
7.5 *
A
4.6
4.6 *
A
30
30 *
A
600
(Note 1)
± 30
V
230
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
7.5
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
14.7
4.5
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
147
1.18
48
0.38
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
FQP8N60C
0.85
FQPF8N60C
2.6
Units
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
Parameter
Test Conditions
Min
Typ
Max
Units
600
--
--
V
--
0.7
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.75 A
--
1.0
1.2
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 3.75 A
--
8.7
--
S
--
965
1255
pF
--
105
135
pF
--
12
16
pF
--
16.5
45
ns
--
60.5
130
ns
--
81
170
ns
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 7.5A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 7.5A,
VGS = 10 V
(Note 4, 5)
--
64.5
140
ns
--
28
36
nC
--
4.5
--
nC
--
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.5
A
ISM
--
--
30
A
--
--
1.4
V
--
365
--
ns
--
3.4
--
µC
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 7.5 A
Drain-Source Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 7.5 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, IAS = 7.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
(Note 4)
FQP8N60C/FQPF8N60C
Symbol
FQP8N60C/FQPF8N60C
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
ID, Drain Current [A]
10
1
10
ID, Drain Current [A]
1
0
10
-1
0
10
o
25 C
-1
10
2
1
10
o
-55 C
0
10
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
-1
10
o
150 C
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
1
10
3.0
VGS = 10V
2.5
2.0
1.5
VGS = 20V
1.0
0
10
150℃
※ Note : TJ = 25℃
0.5
-1
0
5
10
15
20
10
0.2
0.4
ID, Drain Current [A]
2000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1800
0.6
Coss
800
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
600
Crss
400
1.4
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
200
0
-1
10
1.2
12
VGS, Gate-Source Voltage [V]
Ciss
1200
1000
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
10
1600
1400
0.8
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Capacitance [pF]
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
25℃
※ Note : ID = 8A
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
FQP8N60C/FQPF8N60C
1.2
1.1
1.0
0.9
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-100
-50
0
50
100
150
200
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4 A
0.5
0.0
-100
-50
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
o
2
10
Operation in This Area
is Limited by R DS(on)
10 µs
10 µs
100 µs
1
10
1 ms
DC
0
ID, Drain Current [A]
ID, Drain Current [A]
Operation in This Area
is Limited by R DS(on)
2
10
10 ms
100 ms
10
-1
10
※ Notes :
o
1. TC = 25 C
100 µs
1
10
10 ms
100 ms
DC
0
10
-1
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
10
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
1
10
2
10
3
10
10
VDS, Drain-Source Voltage [V]
8
ID, Drain Current [A]
6
4
2
50
75
100
-2
10
0
10
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP8N60C
0
25
1 ms
125
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
150
Figure 9-2. Maximum Safe Operating Area
for FQPF8N60C
FQP8N60C/FQPF8N60C
10
0
Zθ JC(t), Thermal Response
D = 0 .5
0 .2
-1
10
0 .1
0 .0 5
※ N o te s :
1 . Z θ J C (t) = 0 .8 5 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .0 2
0 .0 1
10
PDM
s in g le p u ls e
-2
10
t1
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Zθ JC(t), Thermal Response
Figure 11-1. Transient Thermal Response Curve for FQP8N60C
10
D = 0 .5
0
0 .2
0 .1
0 .0 5
10
※ N o te s :
1 . Z θ J C (t) = 2 .6 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
-1
0 .0 2
0 .0 1
PDM
s in g le p u ls e
10
t1
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF8N60C
50KΩ
200nF
12V
FQP8N60C/FQPF8N60C
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
ID (t)
VDS (t)
VDD
tp
Time
FQP8N60C/FQPF8N60C
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
FQP8N60C/FQPF8N60C
TO-220
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
0.35 ±0.10
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
9.75 ±0.30
MAX1.47
Dimensions in Millimeters
FQP8N60C/FQPF8N60C
TO-220F
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