Gunter Semiconductor GmbH GFC420 N Channel Power MOSFET Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150℃ ℃ Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D9 2.48mm x 3.44mm Dimension 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn 8 mil Al Source Bonding Wire: Absolute Maximum Rating Characteristics @Ta=25℃ ℃ Symbol Limit Unit Test Conditions Drain-to-Source Breakdown Voltage V(BR)DSS 500 V VGS=0V, ID=250µΑ Static Drain-to - Source On-resistance RDS(ON) 3 Ω VGS=10V, ID=1.25Α Continuous Drain current ( in target package) ID@25℃ 2.5 A VGS=10V Continuous Drain current ( in target package) ID@100℃ 1.6 A VGS=10V Tj -55~150 ℃ TSTR -55~150 ℃ PD 49 W Operation Junction Storage Temperature Target Device: IRF820 TO-220AB @Tc=25℃