BCW32LT1G General Purpose Transistors NPN Silicon Features www.onsemi.com • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 Vdc Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Collector Current − Continuous 2 EMITTER 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Value Unit mW MARKING DIAGRAM 225 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C 417 °C/W (Note: Microdot may be in either location) °C *Date Code orientation and/or overbar may vary depending upon manufacturing location. D2 M G G 1 RqJA TJ, Tstg −55 to +150 D2 M G = Device Code = Date Code* = Pb−Free Package 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ORDERING INFORMATION Device Package Shipping† BCW32LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NSVBCW32LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2000 November, 2016 − Rev. 4 1 Publication Order Number: BCW32LT1/D BCW32LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) V(BR)CEO 32 − − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 32 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc − − − − 100 10 nAdc mAdc 200 − 450 − − 0.25 0.55 − 0.70 Cobo − − 4.0 pF NF − − 10 dB Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) VCE(sat) Base −Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 100 20 BANDWIDTH = 1.0 Hz RS = 0 50 300 mA 10 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) IC = 1.0 mA 100 mA 7.0 5.0 10 mA 3.0 20 300 mA 100 mA 10 5.0 2.0 1.0 30 mA 0.5 30 mA 10 mA 0.2 2.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 0.1 10 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10 10k Figure 1. Noise Voltage 20 50 100 200 500 1k f, FREQUENCY (Hz) Figure 2. Noise Current www.onsemi.com 2 2k 5k 10k BCW32LT1G NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) BANDWIDTH = 1.0 Hz 200k 100k 50k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500k 20k 10k 5k 2.0 dB 2k 1k 500 3.0 dB 4.0 dB 6.0 dB 10 dB 200 100 50 1M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 1.0 dB 5k 2.0 dB 2k 1k 500 5.0 dB 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k 8.0 dB 10 20 Figure 3. Narrow Band, 100 Hz 500k RS , SOURCE RESISTANCE (OHMS) 3.0 dB 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is defined as: 20k NF + 20 log10 10k 5k 1.0 dB 2k 1k 500 3.0 dB 5.0 dB 8.0 dB S 10 20 30 50 70 100 200 300 500 700 Ǔ en2 ) 4KTRS ) In 2RS2 1ń2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) I = Noise Current of the Transistor referred to the input. n (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) R = Source Resistance (W) 2.0 dB 200 100 50 ǒ 1k IC, COLLECTOR CURRENT (mA) Figure 5. Wideband www.onsemi.com 3 BCW32LT1G TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 -55°C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 1.0 TJ = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 300 mA 200 mA 40 100 mA 20 0 5.0 10 0 20 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 8. Collector Characteristics 1.4 0.1 400 mA 60 Figure 7. Collector Saturation Region 0.8 IB = 500 mA 50 1.6 0.8 25°C to 125°C 0 *qVC for VCE(sat) - 55°C to 25°C -0.8 25°C to 125°C -1.6 qVB for VBE -2.4 0.1 100 *APPLIES for IC/IB ≤ hFE/2 Figure 9. “On” Voltages 0.2 - 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 10. Temperature Coefficients www.onsemi.com 4 50 100 BCW32LT1G TYPICAL DYNAMIC CHARACTERISTICS 10 TJ = 25°C f = 1.0 MHz C, CAPACITANCE (pF) 7.0 Cib 5.0 Cob 3.0 2.0 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance www.onsemi.com 5 10 20 50 BCW32LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BCW32LT1/D