NSS40501UW3, NSV40501UW3 40 V, 5.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 40 VOLTS, 5.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 38 mW COLLECTOR 3 1 BASE Features • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Max Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 5.0 Adc Collector Current − Peak ICM 7.0 A Electrostatic Discharge ESD Collector Current − Continuous HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 875 7.0 mW mW/°C RqJA (Note 1) 143 °C/W PD (Note 2) 1.5 11.8 W mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 85 Thermal Resistance, Junction−to−Lead #3 RqJL (Note 2) Junction and Storage Temperature Range TJ, Tstg Thermal Resistance, Junction−to−Ambient Total Device Dissipation, TA = 25°C Derate above 25°C 3 WDFN3 CASE 506AU 2 Symbol Rating 2 EMITTER 1 MARKING DIAGRAM VB M G G 1 VB = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NSS40501UW3T2G WDFN3 (Pb−Free) 3000/ Tape & Reel °C/W NSV40501UW3T2G WDFN3 (Pb−Free) 3000/ Tape & Reel 23 °C/W −55 to +150 °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz copper traces. 2. FR−4 @ 500 mm2, 1 oz copper traces. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 5 1 Publication Order Number: NSS40501UW3/D NSS40501UW3, NSV40501UW3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max 40 − − 40 − − 6.0 − − − − 0.1 − − 0.1 200 200 200 200 180 − − 320 305 295 − − − − − − − − − − − 0.006 0.038 0.060 0.097 0.130 0.110 0.010 0.045 0.080 0.120 0.160 0.150 − 0.760 0.900 − 0.730 0.900 150 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 40 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) (IC = 3.0 A, VCE = 2.0 V) Collector −Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.020 A) (IC = 3.0 A, IB = 0.030 A) (IC = 4.0 A, IB = 0.400 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 2.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT V V V MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − 650 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − 70 pF Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) td − − 90 ns Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tr − − 100 ns Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) ts − − 1050 ns Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tf − − 100 ns SWITCHING CHARACTERISTICS 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 2 NSS40501UW3, NSV40501UW3 0.40 IC/IB = 10 VCE(sat) = 150°C 0.15 25°C 0.10 −55°C 0.05 0 0.01 0.001 0.1 1.0 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.20 0.30 0.25 VCE(sat) = −55°C 0.20 25°C 0.15 0.10 0.05 0 10 0.001 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 25°C (5 V) 25°C (2 V) 250 200 −55°C (5 V) 150 −55°C (2 V) 1.0 0.9 1.1 IC/IB = 10 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.001 0.01 0.1 1.0 10 0.001 0.1 10 1.0 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current VCE = 2.0 V −55°C 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.8 0.2 10 0.3 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 400 100 VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 150°C (2 V) 300 1.0 1.2 500 350 0.1 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 150°C (5 V) 450 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 550 150°C IC/IB = 100 0.35 0.01 0.1 1.0 10 1.0 10 mA 100 mA IC = 500 mA 0.8 300 mA 0.6 0.4 0.2 0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 NSS40501UW3, NSV40501UW3 130 625 Cobo, OUTPUT CAPACITANCE (pF) Cibo (pF) 575 525 475 425 375 325 275 0 1.0 2.0 4.0 3.0 5.0 Cobo (pF) 110 90 70 50 30 10 6.0 0 5.0 10 15 20 25 30 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1.0 IC (A) Cibo, INPUT CAPACITANCE (pF) 675 1.0 mS 10 mS 100 mS 1.0 S 0.1 Single Pulse Test at Tamb = 25°C Thermal Limit 0.01 0.01 0.1 1.0 10 VCE (Vdc) Figure 9. Safe Operating Area http://onsemi.com 4 100 35 NSS40501UW3, NSV40501UW3 PACKAGE DIMENSIONS WDFN3 CASE 506AU ISSUE O D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 2X 0.10 C 2X ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ DIM A A1 A3 b D D2 E E2 e K L E MIN 0.70 0.00 0.25 1.40 0.90 0.35 MILLIMETERS NOM MAX 0.75 0.80 0.05 0.20 REF 0.30 0.35 2.00 BSC 1.50 1.60 2.00 BSC 1.00 1.10 1.30 BSC 0.35 REF 0.40 0.45 MIN 0.028 0.000 INCHES NOM 0.030 0.008 REF 0.012 0.079 BSC 0.055 0.059 0.079 BSC 0.035 0.039 0.051 BSC 0.014 REF 0.014 0.016 0.010 MAX 0.031 0.002 0.014 0.063 0.043 0.018 TOP VIEW 0.10 C SOLDERING FOOTPRINT* A 0.10 C 1.300 2X 8X 0.08 C SEATING PLANE (A3) SIDE VIEW A1 0.400 0.600 C 0.250 D2 e 2 1 2X 1.100 e/2 0.300 L 0.400 K 0.275 1.600 E2 3 3X b *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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