HW HWL36YRA V1 L-band gaas power fet Datasheet

HWL36YRA
L-Band GaAs Power FET
Autumn 2002 V1
Outline Dimensions
Features
•
Low Cost GaAs Power FET
•
Class A or Class AB Operation
•
Greater than 13 dB Gain
•
5V to 10V Operation
Description
The HWL36YRA is a Power GaAs FET designed for
various L-band & S-band applications.
It is
presently offered in low cost ceramic package.
Absolute Maximum Ratings
VDS
Drain to Source Voltage
+15V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
10mA
TCH
Channel Temperature
175°C
TSTG
Storage Temperature
-65 to +175°C
Power Dissipation
15W
PT
*
*
RA Package (Ceramic)
mounted on an infinite heat sink.
Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests
Symbol
Parameters & Conditions
IDSS
Saturated Current at VDS=3V, VGS=0V
VP
Pinch-off Voltage at VDS=3V, ID=100mA
gm
Transconductance at VDS=3V, ID=1000mA
Rth
Thermal Resistance
Units
Min.
Typ.
Max.
mA
1700
2000
2600
V
-3.5
-2.0
-1.5
mS
-
1000
-
°C/W
-
7
10
dBm
35
36
-
P1dB
Power Output at Test Points
VDS=10V, ID=0.5IDSS
G1dB
Gain at 1dB Compression Point
VDS=10V, ID=0.5IDSS
dB
12
13
-
PAE
Power-Added Efficiency (Pout = P1dB)
VDS=10V, ID=0.5IDSS
%
35
42
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL36YRA
L-Band GaAs Power FET
Autumn 2002 V1
Typical Performance at 25°C
Output Power & Efficiency & Gain vs Input Power
@ f=1.9 GHz, Vds=10V, Ids = 0.5 Idss
Po (dBm)
40
PAE (%)
40
35
30
30
Po
Gain
Eff
25
20
20
15
Gain
10
10
5
0
0
0
4
8
12
16
20
Pin (dBm)
24
Output Power & Efficiency & Gain vs Input Power
@ f=2.4 GHz, Vds=10V, Ids = 0.5 Idss
Po (dBm)
40
PAE (%)
70
35
60
30
50
25
40
20
30
15
Gain
10
Po
Gain
Eff
20
5
10
0
0
4
8
12
16
20
24
28
Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL36YRA
L-Band GaAs Power FET
Autumn 2002 V1
Total Power Dissipation,PT (W)
Power Derating Curve
16
(25,15)
12
8
4
(175,0)
0
0
50
100
150
200
Case Temperature,TC (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL36YRA
L-Band GaAs Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5IDSS
(GHz)
lS11l
∠ANG
lS21l
∠ANG
lS12l
∠ANG
lS22l
∠ANG
0.5
0.973
-143.146
9.497
95.707
0.014
17.597
0.512
-174.520
0.6
0.969
-153.426
7.992
88.677
0.014
9.117
0.524
-176.193
0.7
0.962
-161.504
6.887
83.152
0.014
6.912
0.526
-178.989
0.8
0.958
-168.227
5.964
77.929
0.014
1.489
0.533
179.097
0.9
0.956
-173.554
5.301
73.270
0.015
3.030
0.530
178.612
1.0
0.959
-178.592
4.769
68.292
0.014
0.832
0.534
176.192
1.1
0.956
176.875
4.322
64.671
0.014
-3.459
0.538
174.649
1.2
0.954
172.884
3.901
60.520
0.013
-7.050
0.541
173.694
1.3
0.953
169.241
3.568
56.704
0.013
-7.716
0.545
172.614
1.4
0.954
165.452
3.298
52.680
0.014
-10.230
0.546
171.105
1.5
0.949
162.381
3.030
49.241
0.013
-9.909
0.550
170.714
1.6
0.951
159.244
2.810
45.995
0.014
-11.405
0.559
169.706
1.7
0.952
156.395
2.620
42.812
0.013
-13.388
0.565
168.753
1.8
0.951
153.692
2.453
39.857
0.014
-12.553
0.578
167.846
1.9
0.949
151.022
2.298
36.568
0.013
-14.102
0.582
166.919
2.0
0.951
148.408
2.166
33.358
0.012
-18.172
0.593
165.732
2.1
0.947
146.219
2.032
30.228
0.012
-19.352
0.595
164.690
2.2
0.946
144.021
1.923
27.476
0.012
-19.314
0.606
163.840
2.3
0.947
141.988
1.818
24.535
0.012
-17.675
0.608
162.762
2.4
0.947
139.849
1.723
21.789
0.012
-20.781
0.617
162.294
2.5
0.946
137.624
1.632
18.738
0.012
-22.772
0.624
160.420
2.6
0.950
136.194
1.558
16.360
0.012
-19.020
0.633
159.952
2.7
0.952
134.364
1.486
13.796
0.012
-24.484
0.638
159.485
2.8
0.953
132.441
1.416
11.277
0.013
-23.643
0.641
159.083
2.9
0.953
130.400
1.359
8.642
0.012
-24.168
0.646
158.175
3.0
0.947
128.579
1.295
6.031
0.012
-23.039
0.653
157.337
3.1
0.953
127.064
1.246
3.677
0.012
-24.243
0.660
157.066
3.2
0.951
125.351
1.202
1.286
0.012
-23.444
0.671
156.212
3.3
0.947
123.876
1.155
-0.969
0.012
-24.499
0.675
155.475
3.4
0.949
122.347
1.114
-3.604
0.012
-27.134
0.682
154.126
3.5
0.946
121.140
1.081
-5.711
0.011
-22.681
0.687
153.258
3.6
0.953
119.590
1.043
-8.334
0.011
-22.894
0.692
152.397
3.7
0.957
118.198
1.010
-10.611
0.011
-30.031
0.697
151.238
3.8
0.957
116.744
0.978
-12.836
0.011
-26.886
0.702
150.539
3.9
0.957
115.213
0.946
-14.884
0.012
-25.404
0.699
149.918
4.0
0.957
113.657
0.920
-17.216
0.012
-29.596
0.705
149.071
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
Similar pages