HWL36YRA L-Band GaAs Power FET Autumn 2002 V1 Outline Dimensions Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 13 dB Gain • 5V to 10V Operation Description The HWL36YRA is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Absolute Maximum Ratings VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 10mA TCH Channel Temperature 175°C TSTG Storage Temperature -65 to +175°C Power Dissipation 15W PT * * RA Package (Ceramic) mounted on an infinite heat sink. Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests Symbol Parameters & Conditions IDSS Saturated Current at VDS=3V, VGS=0V VP Pinch-off Voltage at VDS=3V, ID=100mA gm Transconductance at VDS=3V, ID=1000mA Rth Thermal Resistance Units Min. Typ. Max. mA 1700 2000 2600 V -3.5 -2.0 -1.5 mS - 1000 - °C/W - 7 10 dBm 35 36 - P1dB Power Output at Test Points VDS=10V, ID=0.5IDSS G1dB Gain at 1dB Compression Point VDS=10V, ID=0.5IDSS dB 12 13 - PAE Power-Added Efficiency (Pout = P1dB) VDS=10V, ID=0.5IDSS % 35 42 - Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. HWL36YRA L-Band GaAs Power FET Autumn 2002 V1 Typical Performance at 25°C Output Power & Efficiency & Gain vs Input Power @ f=1.9 GHz, Vds=10V, Ids = 0.5 Idss Po (dBm) 40 PAE (%) 40 35 30 30 Po Gain Eff 25 20 20 15 Gain 10 10 5 0 0 0 4 8 12 16 20 Pin (dBm) 24 Output Power & Efficiency & Gain vs Input Power @ f=2.4 GHz, Vds=10V, Ids = 0.5 Idss Po (dBm) 40 PAE (%) 70 35 60 30 50 25 40 20 30 15 Gain 10 Po Gain Eff 20 5 10 0 0 4 8 12 16 20 24 28 Pin (dBm) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. HWL36YRA L-Band GaAs Power FET Autumn 2002 V1 Total Power Dissipation,PT (W) Power Derating Curve 16 (25,15) 12 8 4 (175,0) 0 0 50 100 150 200 Case Temperature,TC (℃) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. HWL36YRA L-Band GaAs Power FET Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=10V, IDS=0.5IDSS (GHz) lS11l ∠ANG lS21l ∠ANG lS12l ∠ANG lS22l ∠ANG 0.5 0.973 -143.146 9.497 95.707 0.014 17.597 0.512 -174.520 0.6 0.969 -153.426 7.992 88.677 0.014 9.117 0.524 -176.193 0.7 0.962 -161.504 6.887 83.152 0.014 6.912 0.526 -178.989 0.8 0.958 -168.227 5.964 77.929 0.014 1.489 0.533 179.097 0.9 0.956 -173.554 5.301 73.270 0.015 3.030 0.530 178.612 1.0 0.959 -178.592 4.769 68.292 0.014 0.832 0.534 176.192 1.1 0.956 176.875 4.322 64.671 0.014 -3.459 0.538 174.649 1.2 0.954 172.884 3.901 60.520 0.013 -7.050 0.541 173.694 1.3 0.953 169.241 3.568 56.704 0.013 -7.716 0.545 172.614 1.4 0.954 165.452 3.298 52.680 0.014 -10.230 0.546 171.105 1.5 0.949 162.381 3.030 49.241 0.013 -9.909 0.550 170.714 1.6 0.951 159.244 2.810 45.995 0.014 -11.405 0.559 169.706 1.7 0.952 156.395 2.620 42.812 0.013 -13.388 0.565 168.753 1.8 0.951 153.692 2.453 39.857 0.014 -12.553 0.578 167.846 1.9 0.949 151.022 2.298 36.568 0.013 -14.102 0.582 166.919 2.0 0.951 148.408 2.166 33.358 0.012 -18.172 0.593 165.732 2.1 0.947 146.219 2.032 30.228 0.012 -19.352 0.595 164.690 2.2 0.946 144.021 1.923 27.476 0.012 -19.314 0.606 163.840 2.3 0.947 141.988 1.818 24.535 0.012 -17.675 0.608 162.762 2.4 0.947 139.849 1.723 21.789 0.012 -20.781 0.617 162.294 2.5 0.946 137.624 1.632 18.738 0.012 -22.772 0.624 160.420 2.6 0.950 136.194 1.558 16.360 0.012 -19.020 0.633 159.952 2.7 0.952 134.364 1.486 13.796 0.012 -24.484 0.638 159.485 2.8 0.953 132.441 1.416 11.277 0.013 -23.643 0.641 159.083 2.9 0.953 130.400 1.359 8.642 0.012 -24.168 0.646 158.175 3.0 0.947 128.579 1.295 6.031 0.012 -23.039 0.653 157.337 3.1 0.953 127.064 1.246 3.677 0.012 -24.243 0.660 157.066 3.2 0.951 125.351 1.202 1.286 0.012 -23.444 0.671 156.212 3.3 0.947 123.876 1.155 -0.969 0.012 -24.499 0.675 155.475 3.4 0.949 122.347 1.114 -3.604 0.012 -27.134 0.682 154.126 3.5 0.946 121.140 1.081 -5.711 0.011 -22.681 0.687 153.258 3.6 0.953 119.590 1.043 -8.334 0.011 -22.894 0.692 152.397 3.7 0.957 118.198 1.010 -10.611 0.011 -30.031 0.697 151.238 3.8 0.957 116.744 0.978 -12.836 0.011 -26.886 0.702 150.539 3.9 0.957 115.213 0.946 -14.884 0.012 -25.404 0.699 149.918 4.0 0.957 113.657 0.920 -17.216 0.012 -29.596 0.705 149.071 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.