BYT 11-600 →1000 FAST RECOVERY RECTIFIER DIODES SOFT RECOVERY VERY HIGH VOLTAGE SMALL RECOVERY CHARGE APPLICATIONS ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE SNUBBER DIODES F 126 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IFRM Repetive Peak Forward Current tp ≤ 20µs 20 A IF (AV) Average Forward Current * Ta = 75°C δ = 0.5 1 A IFSM Surge non Repetitive Forward Current tp = 10ms Sinusoidal 35 A Ptot Power Dissipation * Ta = 55°C 1.25 W Tstg Tj Storage and Junction Temperature Range - 55 to + 150 - 55 to + 150 °C TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case Symbol VRRM °C BYT 11- Parameter Repetitive Peak Reverse Voltage 230 Unit 600 800 1000 600 800 1000 V THERMAL RESISTANCE Symbol Rth (j - a) Parameter Junction-ambient* Value Unit 60 °C/W * On infinite heatsink with 10mm lead length. November 1994 1/4 BYT11-600 → 1000 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol Test Conditions Min. Typ. Max. Unit IR Tj = 25°C VR = VRRM 20 µA VF Tj = 25°C IF = 1A 1.3 V Max. Unit 100 ns RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C IF = 0.5A IR = 1A Min. Irr = 0.25A Typ. To evaluate the conduction losses use the following equations: VF = 1.1 + 0.075 IF P = 1.1 x IF(AV) + 0.075 IF2(RMS) F i gu re 1. Ma xi mu m av era ge power dissipation versus average forward current. Figure 2. Average forward current versus ambient temperature. Figure 3. Thermal resistance versus lead length. Mounting n°1 INFINITE HEATSINK Test point of tlead 2/4 Mounting n°2 PRINTED CIRCUIT Soldering BYT 11-600 → 1000 Figure 5. Peak forward current versus peak forward voltage drop (maximum values). Figure 4. Transient thermal impedance junction-ambient for mounting n°2 versus pulse duration (L = 10 mm). Figure 6. Capacitance versus reverse applied voltage Figure 7. Non repetitive surge peak current versus number of cycles 3/4 BYT11-600 → 1000 PACKAGE MECHANICAL DATA F 126 (Plastic) B A note 1 E B /C O E note 1 /D O O /D note 2 DIMENSIONS REF. Millimeters Inches NOTES Min. Max. Min. Max. A 6.05 6.35 0.238 0.250 1 - The lead diameter ∅ D is not controlled over zone E B 26 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) 1.024 ∅C 2.95 3.05 0.116 0.120 ∅D 0.76 0.86 0.029 0.034 E 1.27 0.050 Cooling method: by convection (method A) Marking: type number ring at cathode end Weight: 0.4g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A. 4/4