PD - 97172
IRF7854PbF
Applications
l Primary Side Switch in Bridge or twoswitch forward topologies using 48V
(±10%) or 36V to 60V ETSI range inputs.
l Secondary Side Synchronous
Rectification Switch for 12Vout
l Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design,
(See App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
80V
13.4m:@VGS = 10V
10A
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
80
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
10
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
7.9
c
A
IDM
Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
11
-55 to + 150
V/ns
°C
TSTG
Storage Temperature Range
79
h
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
ei
Typ.
Max.
Units
–––
20
°C/W
–––
50
Notes through are on page 8
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01/05/06
IRF7854PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
80
–––
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.095
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
11
13.4
VGS(th)
Gate Threshold Voltage
3.0
–––
4.9
mΩ
V
VDS = VGS, ID = 100µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS = 80V, VGS = 0V
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
IGSS
–––
V
VGS = 0V, ID = 250µA
VGS = 10V, ID = 10A
f
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
–––
–––
Conditions
gfs
Qg
Forward Transconductance
12
S
VDS = 25V, ID = 6.0A
Total Gate Charge
–––
27
41
Qgs
Gate-to-Source Charge
–––
7.7
–––
nC
VDS = 40V
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.7
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
9.4
–––
VDD = 40V
tr
Rise Time
–––
8.5
–––
td(off)
Turn-Off Delay Time
–––
15
–––
tf
Fall Time
–––
8.6
–––
VGS = 10V
Ciss
Input Capacitance
–––
1620
–––
VGS = 0V
Coss
Output Capacitance
–––
350
–––
Crss
Reverse Transfer Capacitance
–––
86
–––
Coss
Output Capacitance
–––
1730
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
230
–––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
410
–––
VGS = 0V, VDS = 0V to 64V
ID = 6.0A
f
ID = 6.0A
ns
RG = 6.2Ω
f
VDS = 25V
pF
ƒ = 1.0MHz
g
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
–––
Max.
110
Units
mJ
–––
6.0
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
2.3
ISM
(Body Diode)
Pulsed Source Current
–––
–––
79
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 6.0A, VGS = 0V
trr
Reverse Recovery Time
–––
43
65
ns
Qrr
Reverse Recovery Charge
–––
76
110
nC
ton
Forward Turn-On Time
2
c
MOSFET symbol
A
D
G
TJ = 25°C, IF = 6.0A, VDD = 25V
di/dt = 100A/µs
S
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF7854PbF
100
100
10
BOTTOM
1
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
0.1
5.0V
0.01
10
BOTTOM
5.0V
1
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.001
0.1
0.1
1
10
100
1000
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
T J = 150°C
10
T J = 25°C
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
ID = 10A
VGS = 10V
1.5
1.0
0.5
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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8
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF7854PbF
100000
VGS, Gate-to-Source Voltage (V)
ID= 6.0A
Coss = Cds + Cgd
10000
C, Capacitance (pF)
12.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Ciss
1000
Coss
Crss
100
10
10.0
VDS= 64V
VDS= 40V
VDS= 16V
8.0
6.0
4.0
2.0
0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 150°C
10
T J = 25°C
1
100
100µsec
10
10msec
1
T A = 25°C
0.1
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.01
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1msec
1.2
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7854PbF
10
RD
VDS
VGS
ID, Drain Current (A)
8
D.U.T.
RG
+
-VDD
6
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
VDS
90%
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
tr
td(on)
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
Thermal Response ( Z thJA )
10
1
τJ
0.1
0.01
R1
R1
τJ
τ1
R2
R2
τ1
τ2
τ2
τ3
τ3
τι (sec)
Ri (°C/W)
τA
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
R3
R3
τ
4.329
0.003565
30.099
1.1249
15.590
34.5
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7854PbF
T J = 125°C
20
15
T J = 25°C
10
Vgs = 10V
5
0
10
20
30
40
50
60
70
80
40
RDS(on), Drain-to -Source On Resistance (m Ω)
RDS(on), Drain-to -Source On Resistance ( mΩ)
25
ID = 6.0A
35
30
25
T J = 125°C
20
15
T J = 25°C
10
4
90
ID, Drain Current (A)
VCC
QGS
QGD
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
14
16
450
VG
Charge
tp
12
QG
VGS
1K
10
Fig 13. On-Resistance vs. Gate Voltage
EAS , Single Pulse Avalanche Energy (mJ)
DUT
0
8
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
L
6
A
ID
TOP
0.61A
0.75A
BOTTOM 6.0A
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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IRF7854PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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7
IRF7854PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 6.0mH,
RG = 25Ω, IAS = 6.0A.
When mounted on 1 inch square copper
board, t ≤ 10 sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 6.0A, di/dt ≤ 350A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Rθ is measured at TJ of approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/06
8
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