2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 Features Description • High Output Power: 18.0␣ dBm Typical P 1 dB at 12␣ GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range. • High Gain: 9.0 dB Typical GSS at 12␣ GHz • Cost Effective Ceramic Microstrip Package • Tape-and-Reel Packaging Option Available[1] 36 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units Min. 7.0 GSS Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA f = 12.0 GHz dB NFO GA Optimum Noise Figure: VDS = 3 V, IDS = 10 mA Gain @ NFO: VDS = 3 V, IDS = 10 mA f = 12.0 GHz f = 12.0 GHz dB dB P1 dB Power Output @ 1 dB Gain Compression: VDS = 5 V, IDS = 30 mA f = 12.0 GHz dBm gm Transconductance: VDS = 3 V, VGS = 0 V IDSS Saturated Drain Current: VDS = 3 V, VGS = 0 V VP Pinch-off Voltage: VDS = 3 V, IDS = 1 mA Typ. Max. 9.0 2.2 6.0 15.0 18.0 mmho 15 35 mA 30 50 90 V -3.5 -1.5 -0.5 Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.” 5-67 5965-8704E ATF-26836 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature[4] Absolute Maximum[1] +7 -4 -8 IDSS 275 175 -65 to +175 Units V V V mA mW °C °C θjc = 350°C/W; TCH = 150°C 1␣ µm Spot Size[5] Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number Devices Per Reel Reel Size ATF-26836-TR1 ATF-26836-STR 1000 10 7" strip ATF-26836 Typical Performance, TA = 25°C 25 25 20 20 MSG 15 GAIN (dB) GAIN (dB) MSG 10 5 0 2.0 |S21|2 4.0 15 10 MAG |S21|2 5 6.0 8.0 10.0 12.0 16.0 FREQUENCY (GHz) Figure 1. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 5 V, IDS = 30 mA. 0 2.0 4.0 6.0 8.0 10.0 12.0 16.0 FREQUENCY (GHz) Figure 2. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 10 mA. 5-68 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 2.9 mW/°C for TCASE >79°C. 4. Storage above +150°C may tarnish the leads of this package difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175°C. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information. Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 3 V, IDS␣ =␣ 10 mA Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 Mag. .94 .90 .84 .75 .64 .52 .49 .52 .56 .61 .67 .69 .72 .72 .72 Ang. -38 -55 -72 -92 -117 -155 163 126 100 78 58 45 35 22 13 dB 8.2 7.8 7.6 8.0 8.1 8.3 7.9 7.2 6.4 5.6 4.7 3.9 3.0 2.5 2.0 S21 Mag. 2.57 2.45 2.41 2.50 2.55 2.60 2.47 2.30 2.10 1.91 1.71 1.57 1.42 1.33 1.26 Ang. 138 120 102 82 61 37 14 -7 -28 -47 -66 -83 -98 -115 -128 dB -27.1 -24.9 -22.9 -20.6 -19.3 -18.1 -17.5 -16.9 -16.8 -17.1 -17.1 -17.3 -17.2 -17.2 -17.4 S12 Mag. .044 .057 .072 .093 .109 .124 .133 .143 .144 .140 .139 .137 .138 .138 .135 S22 Ang. 60 51 44 30 15 5 -12 -21 -32 -41 -49 -61 -66 -77 -85 Mag. .74 .71 .71 .66 .60 .51 .41 .30 .24 .18 .15 .17 .19 .23 .27 Ang. -26 -35 -44 -53 -64 -78 -92 -106 -125 -154 168 134 107 89 71 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 5 V, IDS␣ =␣ 30 mA Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 Mag. .94 .86 .78 .68 .57 .43 .37 .40 .47 .55 .61 .71 .71 .65 .58 Ang. -44 -63 -81 -97 -118 -151 165 122 96 75 53 33 10 -10 -30 dB 9.0 8.5 8.0 7.9 8.1 8.5 8.5 8.0 7.7 7.5 7.4 7.4 6.7 5.7 4.2 S21 Mag. 2.82 2.65 2.51 2.49 2.53 2.65 2.66 2.52 2.42 2.37 2.35 2.34 2.17 1.93 1.62 Ang. 130 110 89 71 51 28 3 -20 -42 -66 -88 -116 -143 -170 166 A model for this device is available in the DEVICE MODELS section. 5-69 dB -30.2 -28.4 -26.9 -25.5 -24.4 -22.4 -20.6 -18.0 -16.4 -15.1 -13.8 -13.2 -13.5 -14.0 -14.9 S12 Mag. .031 .038 .045 .053 .060 .076 .093 .126 .152 .176 .205 .220 .212 .200 .180 S22 Ang. 65 56 47 41 39 38 30 15 3 -4 -19 -39 -56 -72 -93 Mag. .80 .80 .79 .78 .76 .73 .69 .64 .66 .63 .64 .71 .78 .85 .98 Ang. -31 -43 -52 -58 -67 -80 -99 -119 -140 -166 168 132 104 79 61 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 2.11 (0.083) DIA. 4 268 DRAIN 3 GATE 1 SOURCE 1.45 ± 0.25 (0.057 ± 0.010) 0.56 (0.022) 2 2.54 (0.100) 0.508 (0.020) 0.15 ± 0.05 (0.006 ± 0.002) 4.57 ± 0.25 0.180 ± 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 5-70