SEMTECH MCR100-5 Peak repetitive forward and reverse blocking Datasheet

MCR100-3 … MCR100-8
A
G
K
1. Cathode 2. Gate 3. Anode
TO-92 Plastic Package
Absolute Maximum Ratings (TJ = 25 OC unless otherwise noted)
Parameter
Symbol
Peak Repetitive Forward and Reverse Blocking
1)
MCR100-3
Voltage (TJ = 25 to 125 °C, RGK = 1 KΩ)
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100-8
Value
100
200
300
400
500
600
VDRM and VRRM
Forward Current RMS (All Conduction Angles)
Unit
V
IT(RMS)
0.8
A
Peak Forward Surge Current, TA = 25 °C
(1/2 Cycle, Sine Wave, 60 Hz)
ITSM
10
A
Circuit Fusing Considerations (t = 8.3 ms)
It
2
0.415
As
PGM
0.1
W
PGF(AV)
0.01
W
Forward Peak Gate Current (TA = 25 °C, PW ≤ 1 µs)
IGFM
1
A
Reverse Peak Gate Voltage (TA = 25 °C PW ≤ 1 µs)
Operating Junction Temperature Range
at Rated VRRM and VDRM
VGRM
5
V
Tj
- 40 to + 125
°C
Tstg
- 40 to + 150
°C
Forward Peak Gate Power (TA = 25 °C, PW ≤ 1 µs)
Forward Average Gate Power (TA = 25 °C)
Storage Temperature Range
1)
VDRM and VRRM for types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage;
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the device are exceeded.
Characteristics at Ta = 25 OC, RGK = 1 KΩ unless otherwise noted.
Parameter
Symbol
Peak Forward or Reverse Blocking Current
at VAK = Rated VDRM or VRRM
Peak Forward On-State Voltage
at ITM = 1 A Peak, TA = 25 °C
1)
Gate Trigger Current (Continuous dc)
at Anode Voltage = 7 Vdc, RL=100 Ω)
Gate Trigger Voltage (Continuous dc)
at Anode Voltage = 7 Vdc, RL = 100 Ω)
at Anode Voltage = Rated VDRM, RL = 100 Ω)
Holding Current
at Anode Voltage = 7 Vdc, initiating current = 20 mA)
1)
2
Min.
Max.
Unit
IDRM, IRRM
-
10
µA
VTM
-
1.7
V
IGT
-
200
µA
VGT
-
0.8
V
IH
-
5
mA
RGK current is not included in measurement.
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 06/12/2003
MCR100-3 … MCR100-8
Gate Trigger Voltage (volts)
Gate Trigger Current (µA)
100
90
80
70
60
50
40
30
20
10
-40
-25
5
-10
20
35
50
65
80
95
110
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25
50
65
80
95
110
1000
Latching Current (µA)
Holding Current (µA)
35
Figure 2. Typical Gate Trigger Voltage
Versus Junction Temperature
1000
100
-40 -25
-10
5
20
35
50
65
80
95
100
10
110
-40 -25
-10
20
5
35
50
65
80
95
110
TJ, Junction Temperature (°C)
Figure 4. Typical Latching Curent Versus
Junction Temperature
TJ, Junction Temperature (°C)
Figure 3. Typical Holding Curent Versus
Junction Temperature
TC, Maximum Allowable Case
Temperature (°C)
20
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Figure 1. Typical Gate Trigger Curent Versus
Junction Temperature
10
5
-10
10
110
100
90
DC
80
180°C
70
60
50
40
0
0.1
30°C
0.2
60°C
0.3
IT,Instantaneous On-State
Current (AMPS)
120
90°C
0.4
MAXIMUM @ TJ=25°C
MAXIMUM @ TJ=110°C
1
0.1
0.5
IT(RMS), RMS On-State Current (AMPS)
Figure 5. Typical RMS Current Derating
0.5 0.8
1.1
1.4
1.7
2.0
2.3
2.6
2.9
3.2
3.5
VT, Instantaneous On-State Voltage (volts)
Figure 6. Typical On-State Characteristics
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 06/12/2003