SOT23 NPN PLANAR SMALL SIGNAL TRANSISTORS BCW71 BCW72 BCW71 BCW72 ISSUE 2 FEBRUARY 1995 PARTMARKING DETAILS DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C 1.10 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G K L N NOM 1.9 0.01 2.10 0.10 2.50 NOM 0.95 NOM 0.075 0.0004 0.0825 BCW71 BCW72 BCW71R BCW72R K1 K2 K4 K5 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V 0.004 Collector-Emitter Voltage VCEO 45 V 0.0985 Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 200 mA Continuous Collector Current IC 100 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C NOM 0.37 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Cut-Off Current ICBO Base-Emitter Voltage VBE TYP. 550 Collector-Emitter Saturation VCE(sat) Voltage 120 210 Base-Emitter Saturation Voltage VBE(sat) 750 850 Static Forward BCW71 Current Transfer Ratio BCW72 hFE 110 200 Transition Frequency fT Collector Capacitance CTC Noise Figure N 90 150 MAX. UNIT CONDITIONS. 100 10 µA nA IE=0, VCB=20V IE=0, VCB=20V,Tj=100°C 700 mV IC=2.0mA, VCE=5V 250 mV mV IC=10mA, IB=0.5mA IC=50mA, IB=2.5mA mV mV IC=10mA, IB=0.5mA IC=50mA, IB=2.5mA 220 IC =10µ A, VCE =5V IC =2mA, VCE =5V 450 IC =10µ A, VCE =5V IC =2mA, VCE =5V 300 MHz IC =10mA, VCE =5V f =35MHz 4 pF IE =Ie =0, VCB =10V f =1MHz 10 dB IC =200µ A, VCE =5V RS =2KΩ , f =1KHz B =200Hz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for these devices PAGE NO SOT23 NPN PLANAR SMALL SIGNAL TRANSISTORS BCW71 BCW72 BCW71 BCW72 ISSUE 2 FEBRUARY 1995 PARTMARKING DETAILS DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C 1.10 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G K L N NOM 1.9 0.01 2.10 0.10 2.50 NOM 0.95 NOM 0.075 0.0004 0.0825 BCW71 BCW72 BCW71R BCW72R K1 K2 K4 K5 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V 0.004 Collector-Emitter Voltage VCEO 45 V 0.0985 Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 200 mA Continuous Collector Current IC 100 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C NOM 0.37 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Cut-Off Current ICBO Base-Emitter Voltage VBE TYP. 550 Collector-Emitter Saturation VCE(sat) Voltage 120 210 Base-Emitter Saturation Voltage VBE(sat) 750 850 Static Forward BCW71 Current Transfer Ratio BCW72 hFE 110 200 Transition Frequency fT Collector Capacitance CTC Noise Figure N 90 150 MAX. UNIT CONDITIONS. 100 10 µA nA IE=0, VCB=20V IE=0, VCB=20V,Tj=100°C 700 mV IC=2.0mA, VCE=5V 250 mV mV IC=10mA, IB=0.5mA IC=50mA, IB=2.5mA mV mV IC=10mA, IB=0.5mA IC=50mA, IB=2.5mA 220 IC =10µ A, VCE =5V IC =2mA, VCE =5V 450 IC =10µ A, VCE =5V IC =2mA, VCE =5V 300 MHz IC =10mA, VCE =5V f =35MHz 4 pF IE =Ie =0, VCB =10V f =1MHz 10 dB IC =200µ A, VCE =5V RS =2KΩ , f =1KHz B =200Hz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for these devices PAGE NO