MSW310x-310
SP3T PIN Diode Switch
Rev. V1
Features
Wide Frequency Range: 50 MHz to 4 GHz, in 2
bands
Surface Mount SP3T Switch in Compact Outline:
8 mm L x 5 mm W x 2.5 mm H
Higher Average Power Handling than Plastic
Packaged
MMIC Switches: 158 W CW
High RF Peak Power: 500 W
Low Insertion Loss: 0.45 dB
High IIP3: 65 dBm
Operates From Positive Voltage Only: 5 V & 28 V
to 125 V
RoHS* Compliant
CS310
Functional Schematic
Description
The MSW3100-301 (50 MHz - 1 GHz) and
MSW3101-301 (400 MHz - 4 GHz) series of surface
mount silicon PIN diode SP3T switches can be used
for high power transmit/receive (TR) symmetrical
switching or active receiver protection. These
switches are manufactured using a proven hybrid
manufacturing process incorporating high voltage
PIN diodes and passive devices integrated on a
ceramic substrate. These low profile, compact,
surface mount components offer superior small and
large signal performance compared to that of MMIC
devices in QFN packages. The SP3T switches are
designed in a symmetrical topology to enable
switched RF port to be used as the high-input-power
-handling port, to minimize insertion loss and to
maximize isolation performance. The very low
thermal resistance (<25ºC/W) of the PIN diodes in
these devices enables them to reliably handle RF
incident power levels of 50 dBm CW and RF peak
incident power levels of 57 dBm in cold switching
applications. The thick I layers of the PIN diodes
(>100 µm), coupled with their long minority carrier
lifetime (>2 µs), produces input third order intercept
point (IIP3) greater than 65 dBm.
These MSW310x-310 Series SP3T switches are
designed to be used in high average and peak
power switch applications, operating from 50 MHz to
4 GHz in two bands, which utilize high volume,
surface mount, solder re-flow manufacturing. These
products are durable and capable of reliably
operating in military, commercial, and industrial
environments.
Ordering Information
Part Number
Package
MSW3100-301-T
tube
MSW3100-301-R
250 or 500 piece reel
MSW3100-301-W
Waffle pack
MSW3101-301-T
tube
MSW3101-301-R
250 or 500 piece reel
MSW3101-301-W
Waffle pack
MSW3100-301-E
RF evaluation board
MSW3101-301-E
RF evaluation board
* Restrictions on Hazardous Substances,
European Union Directive 2011/65/EU.
1
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For further information and support please visit:
https://www.macom.com/support
DS-xxxxxxx
MSW310x-310
SP3T PIN Diode Switch
Rev. V1
MSW3100-310 Electrical Specifications: TA = +25°C, PIN = 0 dBm, Z0 = 50 Ω
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Frequency
—
MHz
50
—
1000
Insertion Loss
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
Bias State 2: port J0 to J3
dB
—
0.4
0.6
Return Loss
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
Bias State 2: port J0 to J3
dB
18
20
—
Isolation
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
Bias State 2: port J0 to J3
dB
50
53
—
CW Incident Power1
Source & Load VSWR = 1.5:1
dBm
—
—
50
Peak Incident Power1
Source & Load VSWR = 1.5:1
Pulse Width = 10 µs, Duty Cycle = 1%
dBm
—
—
57
Switching Time2
10% -90% RF Voltage,
TTL rep rate = 100 kHz
µs
—
2
3
Input IP3
F1 = 500 MHz, F2 = 510 MHz
P1 = P2 = 10 dBm
Measure on path biased to low loss state
dBm
60
65
—
MSW3101-310 Electrical Specifications: TA = +25°C, PIN = 0 dBm, Z0 = 50 Ω
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Frequency
—
MHz
400
—
4000
Insertion Loss
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
Bias State 2: port J0 to J3
dB
—
0.6
0.8
Return Loss
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
Bias State 2: port J0 to J3
dB
14
15
—
Isolation
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
Bias State 2: port J0 to J3
dB
32
34
—
CW Incident Power1
Source & Load VSWR = 1.5:1
dBm
—
—
50
Peak Incident Power1
Source & Load VSWR = 1.5:1
Pulse Width = 10 µs, Duty Cycle = 1%
dBm
—
—
57
Switching Time2
10% -90% RF Voltage,
TTL rep rate = 100 kHz
µs
—
2
3
Input IP3
F1 = 500 MHz, F2 = 510 MHz
P1 = P2 = 10 dBm
Measure on path biased to low loss state
dBm
60
65
—
2
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DS-xxxxxxx
MSW310x-310
SP3T PIN Diode Switch
Rev. V1
1. PIN diode DC reverse voltage to maintain high resistance in the OFF PIN diode is determined by RF frequency, incident power, and VSWR
as well as by the characteristics of the diode. The minimum reverse bias voltage values are provided in this datasheet. The input signal
level applied for small signal testing is approximately 0 dBm.
2. Switching Speed ( 50 % TTL – 10/90 % RF Voltage ) is a function of the PIN diode driver performance as well as the characteristics of the
diode. An RC “current spiking network” is used on the driver output to provide a transient current to rapidly remove stored charge from the
PIN diode. Typical component values are: R = 50 to 220 Ω and C = 470 to 1,000 pF. MACOMs MPD3T28125-700 is the recommended PIN
diode driver to interface with the MSW3100-310, MSW3101-310 SP3T switches.
Truth Table
Port
J0 - J1
Port
J0 - J2
Port
J0 - J3
Bias: J1
Bias: J2
Bias: J2
Bias: B1
Bias: B2
Bias: B3
Bias: J0
Low Loss
Isolation
Isolation
0 V,
-100 mA
+27 V,
0 mA
+27 V,
0 mA
+27 V,
0 mA
0 V,
-25 mA
0 V,
-25 mA
+5 V,
+100 mA
Isolation
Low Loss
Isolation
+27 V,
0 mA
0 V,
-100 mA
+27 V,
0 mA
0 V,
-25 mA
+27 V,
0 mA
0 V,
-25 mA
+5 V,
+100 mA
Isolation
Isolation
Low Loss
+27 V,
0 mA
+27 V,
0 mA
0 V,
-100 mA
0 V,
-25 mA
0 V,
-25 mA
+27 V,
0 mA
+5 V,
+100 mA
RF Bias Network Component Values
Part #
Frequency (MHz)
Inductors
DC Blocking Capacitors RF Bypass Capacitors
MSW3100-310
50 - 1000
4.7 µH
0.1 µF
0.1 µF
MSW3101-310
400 - 4000
82 nH
22 pF
270 pF
3
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DS-xxxxxxx
MSW310x-310
SP3T PIN Diode Switch
Rev. V1
Minimum Reverse Bias Voltage3: PINC = 125 W CW, Z0 = 50 Ω with 1.5:1 VSWR
Part #
20 MHz
100 MHz
200 MHz
400 MHz
1 GHz
4 GHz
MSW3100-310
125 V
25 V
85 V
55 V
28 V
N/A
MSW3101-310
N/A
N/A
125 V
85 V
55 V
28 V
3. N/A denotes the switch is not recommended for that frequency band.
The minimum reverse bias voltage required to maintain a PIN diode out of conduction in the presence of a large
RF signal is given by:
Where:
|VDC|
|VRF|
FMHz
D
WMILS
=
=
=
=
=
magnitude of the minimum DC reverse bias voltage
magnitude of the peak RF voltage (including the effects of the VSWR)
lowest RF signal frequency expressed in MHz
duty factor of the RF signal
thickness of the diode I layer, expressed in mils (thousands of an inch)
R. Caverly and G. Hiller, ―Establishing the Minimum Reverse Bias for a PIN Diode in a High Power Switch, IEEE Transactions on Microwave Theory and Techniques, Vol.38, No.12, December 1990
4
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DS-xxxxxxx
MSW310x-310
SP3T PIN Diode Switch
Rev. V1
Absolute Maximum Ratings
Parameter
Forward Current
Reverse Voltage
Forward Diode Voltage
CW Incident Power Handling4
Peak Incident Power Handling4
Conditions
Absolute Maximum
J1, J2, J3 port
B1, B2, B3 port
J1, J2, J3 port
B1, B2, B3 port
250 mA
150 mA
IF = 250 mA
1.2 V
J0, J1, J2, J3 port
Source & Load VSWR = 1.5:1,
TC = 85°C, cold switching
J0, J1, J2, J3 port
Source & Load VSWR = 1.5:1, TC = 85°C, cold switching,
Pulse Width = 10 µs, Duty Cycle = 1%
125 V
50 dBm
57 dBm
Total Dissipated RF & DC Power4
TC = 85°C, cold switching
5W
Junction Temperature
—
+175°C
Operating Temperature
—
-65°C to +125°C
Storage Temperature
—
-65°C to +150°C
Assembly Temperature
t = 10 s
+260°C
4. Backside RF and DC grounding area of device must be completely solder attached to the RF circuit board vias for proper electrical and
thermal circuit grounding.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 1C
(HBM) devices. The moisture sensitivity level (MSL)
rating for this part is MSL 1.
Environmental Capabilities
The MSW204x-204 diode is capable of meeting the
environmental requirements of MIL-STD-202 and
MIL-STD-750.
5
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MSW310x-310
SP3T PIN Diode Switch
Rev. V1
Typical Performance Curves
MSW3101-310
MSW3100-310
Insertion Loss
Insertion Loss
Isolation
Isolation
Return Loss
Return Loss
6
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MSW310x-310
SP3T PIN Diode Switch
Rev. V1
SP3T Switch Evaluation Board Schematic
SP3T Switch Evaluation Board Description
Below is the description of MSW310x-310 SP3T
series shunt switch module control using
MPD3T28125-701 three channel pin diode driver.
The switch module can also be controlled by using
external voltage sources accordingly. The
MSW310x-310 series shunt three throw switch can
be fully controlled using MPD3T28125-701 three
channel pin diode driver. Each driver section is
connected to bias the series diode and the shunt
diode of the switch arms. For example, in the
configuration described below for the control of a
symmetrical SP3T switch, driver output V1A biases
the series diode connected between switch ports
J0 and J1, the driver output V1B biases the shunt
diode connected between switch ports J1 and B1.
Similarly driver output V2A biases the series diode
connected between switch ports J0 and J2, output
V2B biases the shunt diode connected between
switch ports J2 and B2 and output V3A biases the
series diode connected between switch ports J0
and J3, the driver output V3B biases the shunt
diode connected between switch ports J3 and B3.
A typical symmetric switch with a driver interface is
shown below. In this circuit, the MPD3T28125-701
driver is used to control the MSW3100-310
symmetrical SP3T switch. The switch is controlled
to operate in one of three operational states, which
are called State 1, State 2 and State 3. In the
descriptions of States 1, 2 and 3 (below), it is
assumed that +VCC1 = 5 V and + VCC2 = 28 V.
7
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DS-xxxxxxx
MSW310x-310
SP3T PIN Diode Switch
Rev. V1
State 1
In State 1, the path from port J0 to J1 is in its low
insertion loss condition. The paths from port J0 to
port J2, and port J0 to port J3, are in their high
isolation states. In State 1, the control voltage
applied to CTL 1 is TTL-logic high, and the control
voltages applied to CTL 2 and CTL 3 are TTL-logic
low. CTL 1 logic forward biases the series PIN
diode between the J0 and J1 ports by applying 0 V
to the J1 bias input port (P1-J1), CTL2 & CTL 3 will
re-verse bias the series diodes connected from port
J0 to port J2, and from port J0 to port J3. The
magnitude of the resultant bias current through the
forward-biased diode is primarily determined by the
voltage applied to the J0 bias port (P1-J0)
(5 V nominal), the magnitude of the forward voltage
across the PIN diode and the resistance of R1.
This current is nominally 100 mA. At the same
time, the shunt PIN diodes connected between port
J2 and B2 and between port J3 and B3 are also
forward biased by applying a high bias voltage,
nominally 28 V, to the J2 and J3 bias ports (P1-J2,
P1-J3) and 0 V to the B2 and B3 bias ports (P1-B2,
P1-B3). The magnitudes of the bias currents
through these diodes are primarily determined by
the voltage applied to the J2 and J3 bias ports, the
magnitudes of the forward voltage across each of
the PIN diodes and the resistances of R4 and R5.
These currents are nominally 25 mA each. Under
this condition, the series PIN diodes connected
between the J0 and J2 ports, between the J0 and
J3 ports and the shunt diode between J1 and B1
are each reverse biased. The reverse bias voltage
applied to non-conducting diodes must be sufficiently large to maintain each diode in its non- conducting, high impedance state when a large RF
signal voltage may be present. For example, assume a large RF signal is present in the J0- to-J1
path. The reverse
bias voltage across each of the series diodes in the
other paths is the arithmetic difference of the bias
voltage applied to the J2 bias port or J3 bias port
and the DC forward voltage of the forward-biased
J0-to-J1 series PIN diode. The minimum voltage
required to maintain the series diode between ports
J0 and J2 and the series diode between ports J0
and J3 out of conduction is a function of the magnitude of the RF voltage present, the standing wave
present at the se-ries diode’s anode, the frequency
of the RF signal and the characteristics of the series diode, among other factors. The minimum reverse bias voltage may be calculated as described
in the “Minimum Reverse Bias Voltage” section.
Truth Table
SP3T Switch Operation with PIN Diode Driver (MPDT3T28125-701) Interface
CTRL
1
CTRL
2
CTRL
3
RF
Path
Path
Path
State J0 - J1 J0 - J2 J0 - J2
VHIGH
VLOW
VLOW
1
Low
Loss
VLOW
VHIGH
VLOW
2
High
Isolation
Bias:
J2
Bias:
J2
Bias:
B1
High
High
0 V,
+27 V,
Isolation Isolation -100 mA 0 mA
+27 V,
0 mA
+27 V,
0 V,
0 V,
+5 V,
0 mA -25 mA -25 mA +100 mA
VLOW
VLOW
VHIGH
3
High
High
Isolation Isolation
Low
Loss
Bias:
J1
Bias:
B2
Bias:
B3
Bias:
J0
High +27 V,
0 V,
+27 V,
0 V,
+27 V,
0 V,
+5 V,
Isolation 0 mA -100 mA 0 mA -25 mA 0 mA -25 mA +100 mA
Low
Loss
+27 V,
0 mA
+27 V,
0 V,
0 V,
0 V,
+27 V,
+5 V,
0 mA -100 mA -25 mA -25 mA 0 mA +100 mA
8
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DS-xxxxxxx
MSW310x-310
SP3T PIN Diode Switch
Rev. V1
SP3T Switch Evaluation Board Description
9
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MSW310x-310
SP3T PIN Diode Switch
Rev. V1
State 2
State 3
In State 2, the path from port J0 to J2 is in its low
insertion loss condition. The path from port J0 to port
J1, and the path from port J0 to port J3, are in their
high isolation states. In State 2, the control voltage
applied to CTL 2 is TTL-logic high, and the control
voltages applied to CTL 1 and CTL 3 are TTL-logic
low, which forward biases the series PIN diode
between the J0 and J2 ports by applying 0 V to the
J2 bias input port (P1-J2), while reverse-biasing the
series diodes connected from port J0 to port J1, and
from port J0 to port J3. The magnitude of the resultant bias current through the forward-biased diode is
primarily determined by the voltage applied to the J0
bias port (P1-J0) (5 V nominal), the magnitude of the
forward voltage across the PIN diode and the
resistance of R1. This current is nominally 100 mA.
In State 3, the path from port J0 to J3 is in its low
insertion loss condition. The path from port J0 to port
J1, and the path from port J0 to port J2, is in their
high isolation states.
At the same time, the shunt PIN diodes connected
between port J1 and B1 and between port J3 and B3
are also forward biased by applying a high bias
voltage, nominally 28 V, to the J1 and J3 bias ports
(P1-J1, P1-J3) and 0 V to the B1 and B3 bias ports
(P1-B2, P1-B3). The magnitudes of the bias currents
through these diodes are primarily determined by
the voltage applied to the J1 and J3 bias ports, the
magnitudes of the forward voltage across each of
the PIN diodes and the resistances of R2 and R5.
These currents are nominally 25 mA each. Under
this condition, the series PIN diodes connected
between the J0 and J1 ports, between the J0 and J3
ports and the shunt diode between J2 and B2 are
each reverse biased.
The reverse bias voltage applied to non-conducting
diodes must be sufficiently large to maintain each
diode in its non-conducting, high impedance state
when a large RF signal voltage may be present. For
example, assume a large RF signal is present in the
J0-to-J2 path. The reverse bias voltage across each
of the series diodes in the other paths is the
arithmetic difference of the bias voltage applied to
the J1 bias port or J3 bias port and the DC forward
voltage of the forward-biased J0-to-J2 series PIN
diode.
In State 3, the control voltage applied to CTL 3 is
TTL-logic high, and the control voltages applied to
CTL 1 and CTL 2 are TTL-logic low, which forward
biases the series PIN diode between the J0 and J3
ports by applying 0 V to the J3 bias input port (P1J3), while reverse-biasing the series diodes connected from port J0 to port J1, and from port J0 to
port J2. The magnitude of the resultant bias current
through the forward-biased diode is primarily
determined by the voltage applied to the J0 bias port
(P1-J0) (5 V nominal), the magnitude of the forward
voltage across the PIN diode and the resistance of
R1. This current is nominally 100 mA.
At the same time, the shunt PIN diodes connected
between port J1 and B1 and between port J3 and B2
are also forward biased by applying a high bias
voltage, nominally 28 V, to the J1 and J2 bias ports
(P1-J1, P1-J2) and 0 V to the B1 and B2 bias ports
(P1-B2, P1-B2). The magnitudes of the bias currents
through these diodes are primarily determined by
the voltage applied to the J1 and J2 bias ports, the
magnitudes of the forward voltage across each of
the PIN diodes and the resistances of R2 and R4.
These currents are nominally 25 mA each. Under
this condition, the series PIN diodes connected between the J0 and J1 ports, between the J0 and J2
ports and the shunt diode between J3 and B3 are
each reverse biased.
The reverse bias voltage applied to non-conducting
diodes must be sufficiently large to maintain each
diode in its non-conducting, high impedance state
when a large RF signal voltage may be present. For
example, assume a large RF signal is present in the
J0-to-J3 path. The reverse bias voltage across each
of the series diodes in the other paths is the
arithmetic difference of the bias voltage applied to
the J1 bias port or J2 bias port and the DC forward
voltage of the forward-biased J0-to-J3 series PIN
diode.
10
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DS-xxxxxxx
MSW310x-310
SP3T PIN Diode Switch
Rev. V1
Calculations of Resistor Values
The magnitude of the forward bias current applied to the
series diode is set by the magnitude of the supply voltage
+VCC1, which is nominally 5 V, the value of resistor R1
and the forward voltage of the series diode, VDIODE,
among other factors. Given the desired current value, the
resistance is given by the formula:
The magnitude of the current through the shunt
diode is set by the magnitude of the supply voltage
+VCC2, the value of resistor in series with the shunt
diode (R2 or R4 or R5)and the forward voltage of the
shunt diode, VDIODE, among other factors. Given
the desired current value, this resistance is given by
the formula:
It is important to note that the switch module
evaluation board, as supplied from the factory, is not
capable of handling RF input signals larger than 45
dBm. If performance of the switch under larger input
signals is to be evaluated, an adequate heat sink
must be properly attached to the evaluation board,
and several of the passive components on the board
must be changed in order to safely handle the
dissipated power as well as the high bias voltage
necessary for proper performance. Contact the
factory for recommended components and heat sink.
11
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MSW310x-310
SP3T PIN Diode Switch
Rev. V1
SP3T Switch Evaluation Board Layout
Evaluation Board Parts List
MSW3100-310 Band 1
Part
Value
Case Style
C1, C2, C5 - C10,
C14, C15, C16, C19,
C22, C25 - C28
0.1 µF
0603
5
C3, C4, C11, C12,
C17, C18, C20, C21,
C23, C24
0.1 µF
0603
L1 - L9
4.7 µH
0603
R1
39 Ω
2512
R2, R4, R5
1200 Ω
2512
MSW3101-310 Band 2
Part
Value
Case Style
C1, C5, C7, C9, C13,
C15, C19, C25, C27
22 pF
0603
C2, C6, C8, C10,
C14, C16, C22, C26,
C28
270 pF
0603
C3, C4, C11, C12,
C17, C18, C20, C21,
C23, C24
1000 pF
0603
L1 - L9
82 nH
0603
R1
39 Ω
2512
R2, R4, R5
1200 Ω
2512
5. Second bypass capacitor is optional.
12
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MSW310x-310
SP3T PIN Diode Switch
Rev. V1
Assembly Instructions
SP3T PIN Diodes may be placed onto circuit boards with pick and place manufacturing equipment from tape and
reel. The devices are attached to the circuit using conventional solder re-flow or wave soldering procedures with
RoHS type or Sn 60 / Pb 40 type solders.
13
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MSW310x-310
SP3T PIN Diode Switch
Rev. V1
Outline (CS310)6,7
COMPANY LOGO
DATE CODE
PART NUMBER
RF Circuit Solder footprint
6. Hatched metal area on circuit side of device is RF, DC and thermal grounded.
7. Vias should be solid copper fill and gold plated for optimum heat transfer from backside of switch module through Circuit Vias to metal
thermal ground.
14
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DS-xxxxxxx
MSW310x-310
SP3T PIN Diode Switch
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
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15
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DS-xxxxxxx