LED Chip Infrared Product No: Radiation Infrared Type AlGaAs Electrodes N (cathode) up Typ320 UNIT:um N Electrode OPC8500-32 Φ115 N AlGaAs Cladding Layer AlGaAs Active Layer Typ.180 Emission Area P AlGaAs Cladding Layer P Electrode Physical Characteristics & Structure Material: AlGaAs Bond Pad Size: 115um diameter Junction Size: 320um x 320um Anode Metalization: Gold Alloy Thickness: 180um Cathode Metalization: Gold Alloy Electrical & Optical Characteristics (Ta = 25ºC) ITEMS SYMBOL CONDITIONS MIN TYP MAX UNIT Forward Voltage Reverse Voltage Radiant Power* Peak Wavelength Spectral Bandwidth at 50% Vf Vr Φe λp ∆λ0.5 If=20mA Ir=10uA If=20mA If=20mA If=20mA -5 4.0 --- ---850 40 1.6 ----- V V mW nm nm * LED chip is mounted on TO-18 gold header without resin coated. Absolute Maximum Ratings (Ta = 25ºC) Continuous Maximum Forward Current: 100mA (DC) Reverse Voltage: 5V (IR=10uA) Storage Temperature while on mylar membrane: 0 to 40 ºC after removal from mylar membrane: -30 to 100 ºC We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA TOLL FREE: 1-800-984-5337 • PHONE: 518-956-2980 • FAX: www.marktechopto.com 518-785-4725 • EMAIL: [email protected] 1