Infrared Light Emitting Diodes LNA2603F (LN155) GaAs Infrared Light Emitting Diode Unit : mm 4.5±0.15 3.5±0.15 3.9±0.25 Features Not soldered 0.8 max. 1.5±0.2 For optical control systems High-power output, high-efficiency : PO = 6 mW (typ.) (2.95) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. Long lifetime, high reliability Thin side-view type package 0.45±0.15 2-1.2±0.3 2-0.45±0.15 1 2.54 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter * Symbol Ratings Unit Power dissipation PD 160 mW Forward current (DC) IF 100 mA 1.5 A 3 V * Pulse forward current IFP Reverse voltage (DC) VR Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 1: Anode 2: Cathode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min Radiant power PO IF = 50mA Peak emission wavelength λP IF = 50mA Spectral half band width ∆λ IF = 50mA 50 Forward voltage (DC) VF IF = 100mA 1.3 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz Rise time tr Fall time tf Half-power angle θ IFP = 100mA The angle in which radiant intencity is 50% 3 typ max Unit 6 mW 940 nm nm 1.6 V 10 µA 45 pF 1 µs 1 µs 80 deg. Note) The part number in the parenthesis shows conventional part number. 1 Infrared Light Emitting Diodes LNA2603F IF — Ta IFP — Duty cycle 120 tw = 10µs Ta = 25˚C Pulse forward current 60 40 20 0 – 25 0 20 40 60 80 10 –1 10 –2 10 –3 10 –2 100 IFP (mA) 1 10 –1 Ambient temperature Ta (˚C ) 10 1 0 1 3 4 5 10 IF = 50mA IF = 100mA VF (V) 10 2 1.2 50mA 1mA (1) 10 2 ∆PO — Ta VF — Ta Forward voltage Relative radiant power ∆PO 10 2 Forward voltage VF (V) 1.6 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C (2) 1 10 3 10 –1 10 2 10 tw = 10µs f = 100Hz Ta = 25˚C Duty cycle (%) ∆PO — IFP 10 3 1 0.8 0.4 Relative radiant power ∆PO Allowable forward current 80 10 Pulse forward current IFP (A) IF (mA) 10 2 100 IFP — VF 10 4 1 10 –1 1 10 10 2 10 3 0 – 40 10 4 Pulse forward current IFP (mA) λP — Ta 1000 0 40 Relative radiant intensity (%) Peak emission wavelength λP (nm) 940 920 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 10 –1 – 40 0 40 80 Ambient temperature Ta (˚C ) Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C IF = 50mA 960 120 Ambient temperature Ta (˚C ) 100 980 80 30˚ 40˚ 60 40 60 20˚ 100 80 80 10˚ 20 Relative radiant intensity(%) 10 –2 50˚ 60˚ 70˚ 80˚ 90˚ 100˚ 40 110˚ 120˚ 20 0 860 130˚ 140˚ 900 940 980 1020 1060 1100 Wavelength λ (nm) Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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