MJ21195G - PNP MJ21196G - NPN Silicon Power Transistors The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • • • • • 16 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS 250 VOLTS, 250 WATTS Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These Devices are Pb−Free and are RoHS Compliant* SCHEMATIC Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 400 Vdc Emitter−Base Voltage VEBO 5 Vdc Collector−Emitter Voltage − 1.5V VCEX 400 Vdc IC 16 Adc ICM 30 Adc Base Current − Continuous IB 5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 250 1.43 W W/_C TJ, Tstg −65 to +200 _C Collector Current − Continuous Collector Current − Peak (Note 1) Operating and Storage Junction Temperature Range NPN PNP MAXIMUM RATINGS CASE 3 1 BASE 1 BASE EMITTER 2 1 Max Unit Thermal Resistance, Junction−to−Case RqJC 0.7 _C/W 2 TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Symbol EMITTER 2 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. Characteristics CASE 3 MJ2119xG AYWW MEX MJ2119x = Device Code x = 5 or 6 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 6 1 Package Shipping MJ21195G TO−204 (Pb−Free) 100 Units / Tray MJ21196G TO−204 (Pb−Free) 100 Units / Tray Publication Order Number: MJ21195/D MJ21195G − PNP MJ21196G − NPN ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted) Symbol Min Typical Max Unit VCEO(sus) 250 − − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO − − 100 mAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − − 100 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − − 100 mAdc 5 2.5 − − − − 25 8 − − − − − Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 80 Vdc, t = 1 s (non−repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, VCE = 5 Vdc) hFE Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) 75 − − 2.2 Vdc − − 1.4 4 Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) % − 0.8 − − 0.08 − fT 4 − − MHz Cob − − 500 pF 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2% NPN MJ21196G f, T CURRENT BANDWIDTH PRODUCT (MHz) f, T CURRENT BANDWIDTH PRODUCT (MHz) PNP MJ21195G 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 VCE = 10 V 5V TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 10 10 V VCE = 5 V TJ = 25°C ftest = 1 MHz 0.1 Figure 1. Typical Current Gain Bandwidth Product 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 MJ21195G − PNP MJ21196G − NPN TYPICAL CHARACTERISTICS PNP MJ21195G NPN MJ21196G 1000 TJ = 100°C h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 25°C 100 TJ = 100°C 100 25°C -25°C -25°C VCE = 20 V VCE = 20 V 10 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 0.1 100 100 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJ21195G NPN MJ21196G 1000 TJ = 100°C 100 h FE , DC CURRENT GAIN 1000 h FE , DC CURRENT GAIN 1.0 10 IC, COLLECTOR CURRENT (AMPS) 25°C -25°C TJ = 100°C 100 25°C -25°C VCE = 5 V VCE = 5 V 10 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 Figure 5. DC Current Gain, VCE = 5 V 100 Figure 6. DC Current Gain, VCE = 5 V PNP MJ21195G NPN MJ21196G 30 30 25 IC , COLLECTOR CURRENT (A) IB = 2 A IC , COLLECTOR CURRENT (A) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 1.5 A 20 1A 15 0.5 A 10 5.0 IB = 2 A 1.5 A 25 1A 20 0.5 A 15 10 5.0 TJ = 25°C TJ = 25°C 0 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics http://onsemi.com 3 25 MJ21195G − PNP MJ21196G − NPN TYPICAL CHARACTERISTICS PNP MJ21195G NPN MJ21196G 1.6 TJ = 25°C IC/IB = 10 2.5 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 2.0 1.5 VBE(sat) 1.0 VCE(sat) 0.5 TJ = 25°C IC/IB = 10 1.4 1.2 VBE(sat) 1.0 0.8 0.6 VCE(sat) 0.4 0.2 0 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 Figure 9. Typical Saturation Voltages 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. Typical Saturation Voltages NPN MJ21196G VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) PNP MJ21195G 10 TJ = 25°C VCE = 5 V (DASHED) VCE = 20 V (SOLID) 1.0 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 0.1 0.1 Figure 11. Typical Base−Emitter Voltage IC , COLLECTOR CURRENT (AMPS) 50 ms 1 sec 250 ms 1.0 0.1 10 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 ms 10 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 12. Typical Base−Emitter Voltage 100 1.0 100 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area http://onsemi.com 4 MJ21195G − PNP MJ21196G − NPN 10000 10000 C, CAPACITANCE (pF) Cib 1000 Cob 1000 TJ = 25°C ftest = 1 MHz TJ = 25°C ftest = 1 MHz 100 Cob 100 0.1 1.0 10 100 0.1 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJ21195 Typical Capacitance Figure 15. MJ21196 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) C, CAPACITANCE (pF) Cib 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT -50 V Figure 17. Total Harmonic Distortion Test Circuit http://onsemi.com 5 8.0 W 100 MJ21195G − PNP MJ21196G − NPN PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A N C E D −T− U SEATING PLANE K 2 PL 0.13 (0.005) V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L 2 H G B M T Y 1 −Q− 0.13 (0.005) M INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJ21195/D