ON MJ21196G Silicon power transistors 16 amperes complementary silicon Datasheet

MJ21195G - PNP
MJ21196G - NPN
Silicon Power Transistors
The MJ21195G and MJ21196G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
http://onsemi.com
Features
•
•
•
•
•
16 AMPERES
COMPLEMENTARY SILICONPOWER TRANSISTORS
250 VOLTS, 250 WATTS
Total Harmonic Distortion Characterized
High DC Current Gain
Excellent Gain Linearity
High SOA
These Devices are Pb−Free and are RoHS Compliant*
SCHEMATIC
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
Collector−Emitter Voltage − 1.5V
VCEX
400
Vdc
IC
16
Adc
ICM
30
Adc
Base Current − Continuous
IB
5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
250
1.43
W
W/_C
TJ, Tstg
−65 to +200
_C
Collector Current
− Continuous
Collector Current
− Peak (Note 1)
Operating and Storage Junction
Temperature Range
NPN
PNP
MAXIMUM RATINGS
CASE 3
1
BASE
1
BASE
EMITTER 2
1
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.7
_C/W
2
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Symbol
EMITTER 2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Characteristics
CASE 3
MJ2119xG
AYWW
MEX
MJ2119x = Device Code
x = 5 or 6
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 6
1
Package
Shipping
MJ21195G
TO−204
(Pb−Free)
100 Units / Tray
MJ21196G
TO−204
(Pb−Free)
100 Units / Tray
Publication Order Number:
MJ21195/D
MJ21195G − PNP
MJ21196G − NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)
Symbol
Min
Typical
Max
Unit
VCEO(sus)
250
−
−
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
−
−
100
mAdc
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
−
−
100
mAdc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
−
−
100
mAdc
5
2.5
−
−
−
−
25
8
−
−
−
−
−
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, VCE = 5 Vdc)
hFE
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
75
−
−
2.2
Vdc
−
−
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
THD
hFE
unmatched
hFE
matched
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
%
−
0.8
−
−
0.08
−
fT
4
−
−
MHz
Cob
−
−
500
pF
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
NPN MJ21196G
f,
T CURRENT BANDWIDTH PRODUCT (MHz)
f,
T CURRENT BANDWIDTH PRODUCT (MHz)
PNP MJ21195G
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VCE = 10 V
5V
TJ = 25°C
ftest = 1 MHz
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
10 V
VCE = 5 V
TJ = 25°C
ftest = 1 MHz
0.1
Figure 1. Typical Current Gain Bandwidth Product
1.0
IC, COLLECTOR CURRENT (AMPS)
10
Figure 2. Typical Current Gain Bandwidth Product
http://onsemi.com
2
MJ21195G − PNP
MJ21196G − NPN
TYPICAL CHARACTERISTICS
PNP MJ21195G
NPN MJ21196G
1000
TJ = 100°C
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
1000
25°C
100
TJ = 100°C
100
25°C
-25°C
-25°C
VCE = 20 V
VCE = 20 V
10
10
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
0.1
100
100
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
PNP MJ21195G
NPN MJ21196G
1000
TJ = 100°C
100
h FE , DC CURRENT GAIN
1000
h FE , DC CURRENT GAIN
1.0
10
IC, COLLECTOR CURRENT (AMPS)
25°C
-25°C
TJ = 100°C
100
25°C
-25°C
VCE = 5 V
VCE = 5 V
10
10
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.1
Figure 5. DC Current Gain, VCE = 5 V
100
Figure 6. DC Current Gain, VCE = 5 V
PNP MJ21195G
NPN MJ21196G
30
30
25
IC , COLLECTOR CURRENT (A)
IB = 2 A
IC , COLLECTOR CURRENT (A)
1.0
10
IC, COLLECTOR CURRENT (AMPS)
1.5 A
20
1A
15
0.5 A
10
5.0
IB = 2 A
1.5 A
25
1A
20
0.5 A
15
10
5.0
TJ = 25°C
TJ = 25°C
0
0
0
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
0
Figure 7. Typical Output Characteristics
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
http://onsemi.com
3
25
MJ21195G − PNP
MJ21196G − NPN
TYPICAL CHARACTERISTICS
PNP MJ21195G
NPN MJ21196G
1.6
TJ = 25°C
IC/IB = 10
2.5
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
3.0
2.0
1.5
VBE(sat)
1.0
VCE(sat)
0.5
TJ = 25°C
IC/IB = 10
1.4
1.2
VBE(sat)
1.0
0.8
0.6
VCE(sat)
0.4
0.2
0
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.1
Figure 9. Typical Saturation Voltages
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
NPN MJ21196G
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
PNP MJ21195G
10
TJ = 25°C
VCE = 5 V (DASHED)
VCE = 20 V (SOLID)
1.0
0.1
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
10
TJ = 25°C
VCE = 5 V (DASHED)
1.0
VCE = 20 V (SOLID)
0.1
0.1
Figure 11. Typical Base−Emitter Voltage
IC , COLLECTOR CURRENT (AMPS)
50 ms
1 sec
250 ms
1.0
0.1
10
100
There are two limitations on the power handling
ability of a transistor; average junction temperature
and secondary breakdown. Safe operating area curves
indicate IC − VCE limits of the transistor that must be
observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the
curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C;
TC is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the
power than can be handled to values less than the
limitations imposed by second breakdown.
10 ms
10
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base−Emitter Voltage
100
1.0
100
100
1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
http://onsemi.com
4
MJ21195G − PNP
MJ21196G − NPN
10000
10000
C, CAPACITANCE (pF)
Cib
1000
Cob
1000
TJ = 25°C
ftest = 1 MHz
TJ = 25°C
ftest = 1 MHz
100
Cob
100
0.1
1.0
10
100
0.1
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. MJ21195 Typical Capacitance
Figure 15. MJ21196 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
C, CAPACITANCE (pF)
Cib
1.0
0.9
0.8
0.7
0.6
10
100
1000
FREQUENCY (Hz)
10000
100000
Figure 16. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 W
DUT
0.5 W
0.5 W
DUT
-50 V
Figure 17. Total Harmonic Distortion Test Circuit
http://onsemi.com
5
8.0 W
100
MJ21195G − PNP
MJ21196G − NPN
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
E
D
−T−
U
SEATING
PLANE
K
2 PL
0.13 (0.005)
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MJ21195/D
Similar pages