Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 1/9 CYStech Electronics Corp. Dual N-Channel Enhancement Mode Power MOSFET MTE080A10Q8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & Halogen-free package Equivalent Circuit BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=2.5A RDSON@VGS=6V, ID=2.0A 100V 2.8A 5.0A 74mΩ(typ) 82mΩ(typ) Outline SOP-8 MTE080A10Q8 D2 D2 D1 D1 G：Gate D：Drain S：Source Pin 1 S1 G1 S2 G2 Ordering Information Device MTE080A10Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE080A10Q8 Preliminary CYStek Product Specification Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=2mH, ID=8A, VDD=25V Symbol Limits VDS VGS 100 ±20 5.0 3.2 2.8 2.2 30 18 64 2 ID IDM IAS EAS Power Dissipation for Dual Operation PD Power Dissipation for Single Operation Operating Junction and Storage Temperature Range Tj, Tstg Unit V (Note 2) (Note 2) A (Note 1) (Note 4) mJ 1.6 (Note 2) 0.9 (Note 3) W -55~+150 °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max, dual Symbol RθJC Thermal Resistance, Junction-to-ambient, max , single operation RθJA Value Unit 25 62.5 °C/W 78 (Note 2) 135 (Note 3) Note : 1. Pulse width limited by maximum junction temperature 2. Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. 3. Surface mounted on minimum copper pad, pulse width≤10s. 4. 100% tested by conditions of L=0.1mH, VGS=10V, IAS=10A, VDD=25V. Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. BVDSS VGS(th) GFS IGSS 100 2 - 5.9 74 82 4 ±100 1 25 98 130 - 7.7 4.4 1.8 2.0 10.8 6.2 - Unit Test Conditions Static *1 IDSS RDS(ON) *1 V S nA μA mΩ VGS=0V, ID=250μA VDS =VGS, ID=250μA VDS =10V, ID=5A VGS=±20V, VDS=0V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=70°C VGS =10V, ID=2.5A VGS =6V, ID=2A Dynamic Qg(VGS=10V) *1, 2 Qg(VGS=5V) *1, 2 Qgs *1, 2 Qgd *1, 2 MTE080A10Q8 nC VDS=50V, ID=2.7A, VGS=10V Preliminary CYStek Product Specification CYStech Electronics Corp. td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr *1 Qrr *1 - 6.8 17.4 17 10 298 41 17 4.9 10.2 26.1 25.5 15 447 62 26 - - 0.77 21.8 21.7 2.8 6.5 1.2 - Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 3/9 ns VDS=50V, ID=2.5A, VGS=10V, RG=6Ω pF VGS=0V, VDS=50V, f=1MHz Ω f=1MHz A V ns nC IS=2A, VGS=0V IF=2A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTE080A10Q8 Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 7V 6V ID, Drain Current(A) 25 20 BVDSS, Normalized Drain-Source Breakdown Voltage 30 5.5V 5V 15 4.5V 10 VGS=4V 5 1.2 1 0.8 ID=250μA, VGS=0V 0.6 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1000 R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VSD, Source-Drain Voltage(V) VGS =6V 7V 10V 100 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 2.5 900 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=2.5A 800 700 600 500 400 300 200 100 VGS=10V, ID=2.5A 2 1.5 1 0.5 RDS(ON) @Tj=25°C : 74mΩ typ 0 0 0 MTE080A10Q8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) NormalizedThreshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0 10 20 30 40 VDS, Drain-Source Voltage(V) -75 -50 -25 50 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=25V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 10 1 0.1 VDS=10V Pulsed Ta=25°C 8 VDS=50V 6 4 VDS=65V 2 ID=2.7A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 2 10 4 6 8 Total Gate Charge---Qg(nC) Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 3 RDS(ON) Limited 10 ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 100μs 1ms 1 10ms 100ms 0.1 1s TA=25°C, Tj=150°, VGS=10V RθJA=78°C/W, Single Pulse 0.01 DC 2.5 2 1.5 1 0.5 VGS=10V, RθJA=78°C/W 0 0.001 0.01 MTE080A10Q8 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 Preliminary 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Maximum Power Dissipation (Please see Note on page 2) 30 500 VDS=10V 450 400 20 TJ(MAX) =150°C TA=25°C RθJA=78°C/W 350 Power (W) ID, Drain Current (A) 25 15 10 300 250 200 150 5 100 50 0 0 1 2 3 4 5 6 7 8 VGS, Gate-Source Voltage(V) 9 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=78 ° C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTE080A10Q8 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 Preliminary 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTE080A10Q8 Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE080A10Q8 Preliminary CYStek Product Specification Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name E080 A10 Date Code 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 8° 0 Inches Min. Max. 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE080A10Q8 Preliminary CYStek Product Specification