data sheet DSG9500-000: Planar Beam-Lead PIN Diode Applications l Designed for switching applications Features Low capacitance Low resistance l Fast switching l Oxide-nitride passivated l Durable construction l High voltage l Lead (Pb)-free, RoHS-compliant, and Green™ l l Absolute Maximum Ratings Description The DSG9500-000 silicon planar beam-lead PIN diode is designed for low resistance, low capacitance and fast switching time. The oxide-nitride passivation layers protect the diode junction to provide excellent reliability and stable electrical performance, especially when the diode is housed in a hermetically sealed assembly to further protect the junction from moisture. Operating temperature -65 °C to +150 °C Storage temperature -65 °C to +200 °C The DSG9500-000 is designed for microstrip or stripline circuits and for circuits requiring high isolation from a series-mounted diode such as broadband multithrow switches, phase shifters, limiters, attenuators and modulators. NEW Skyworks Green™ products are RoHS (Restriction of Hazardous Substances)-compliant, conform to the EIA/EICTA/JEITA Joint Industry Guide (JIG) Level A guidelines, are halogen free according to IEC-61249-2-21, and contain <1,000 ppm antimony trioxide in polymeric materials. Characteristic Power dissipation (derate linearly to zero @ 175 °C) Value 250 mW Typical lead strength 8 grams pull Reverse voltage 100 V Performance is guaranteed only under the conditions listed in the specifications table and is not guaranteed under the full range(s) described by the Absolute Maximum Ratings. Exceeding any of the absolute maximum/minimum specifications may result in permanent damage to the device and will void the warranty. CAUTION: A lthough these devices are designed to be robust, ESD (Electrostatic Discharge) can cause permanent damage. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 200137 Rev. H • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • December 29, 2008 1 Data Sheet • DSG9500-000 Electrical Specifications Part Number Voltage Rating(1) (V) CT 50 V, 1 MHz (pF) DSG9500-000 RSTL RF Switching 50 mA, 100 MHz IF = 10 mATime Outline (Ω) (ns)TS (ns)(2)Drawing Max. 100 Max.Typ.Typ. 0.025 4 250 25 169-001 1. Reverse current is specified at 10 µA maximum at the voltage rating. This voltage should not be exceeded. 2. TS measured from RF transition, 90% to 10%, in series configuration. Performance Data for DSG9500-000 38 SPDT isolation curves are shown in Figure 3, and insertion loss in Figures 4 and 5. With proper transitions and bias circuits, VSWR is better than 2.0 to 1 through 18 GHz. 36 32 28 Isolation (dB) Figures 1 and 2 show a single pole double throw 1–18 GHz switch. These diodes are mounted on Alumina, Duroid, or Teflon fiberglass 50 Ω microstrip circuits. Typical bonding methods include thermal compression bonding, parallel gap welding, and soldering. 24 20 16 12 8 4 0 0 Switching Considerations 50 Ω Transmission LIne Figure 1. Typical SPDT Circuit Arrangement 8 10 12 14 16 18 2.5 50 Ω Glass Bead Connecting Lead 6 Figure 3. Isolation vs. Frequency, sPdt 2.0 Insertion Loss (dB) Duroid Substrate 4 Frequency (GHz) The typical minority carrier lifetime of the DSG9500 diodes is 250 ns. With suitable drivers, the individual diodes can be switched from high impedance (off) to low RS (on) in about 10 ns. Beam-Lead Pin 2 1.5 1.0 0.5 0 0 10 50 100 Bias Current (mA) Beam-Lead Pin Metal Conductor 0.005" Preferred BeamLead Orientation Figure 4. diode Insertion Loss vs. Bias, SPSt 18 Ghz Duroid Figure 2. Typical Beam-Lead Mounting Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 2 December 29, 2008 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200137 Rev. H Data Sheet • DSG9500-000 100 Power Handling for DSG9500–000 1.4 Isolation Loss (dB) 1.2 1.0 80 Peak Power (W) Beam-lead diodes are not suitable for high-power operation because of high internal thermal impedance of about 600 °C/W. 60 40 20 0.8 0.6 0 0.4 10 50 100 Reverse Bias (V) 0.2 0 0 0 2 4 6 8 10 12 14 16 Figure 6. Peak Power handling, SPSt 1 Ghz 18 Frequency (GHz) Figure 5. diode Insertion Loss vs. Frequency, sPst, IF = 50 ma 169-001 Cathode End Has Blunted Point 0.004 (0.10 mm) 0.002 (0.05 mm) 0.007 (0.18 mm) Max. With maximum CW power dissipation of 250 mW, the DSG9500-000 diodes are normally rated at 2 W incident CW with linear derating between 25 °C and 150 °C. For pulsed operation, the total RF plus bias voltage must not exceed the rated breakdown. Skyworks has made high-power tests at 1 GHz with 1 µs pulses, 0.001 duty, with 100 V diodes. With 50 mA forward bias, there is no increase in insertion loss over the 0 dBm level with a peak power input of 50 W. In the open state, reverse bias voltage is required to minimize distortion, which may decrease isolation and cause possible failure. Figure 6 shows allowed peak power versus reverse bias at 1 GHz. 0.010 (0.25 mm) Min. 0.011 (0.28 mm) Max. 0.035 (0.89 mm) 0.033 (0.84 mm) 0.010 (0.25 mm) Min. 0.004 (0.10 mm) 0.002 (0.05 mm) 0.0005 (0.013 mm) Max. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 200137 Rev. H • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • December 29, 2008 3 Data Sheet • DSG9500-000 Beam-Lead Diodes Handling Due to their small size, beam-lead devices are fragile and should be handled with extreme care. The individual plastic packages should be handled and opened carefully, so that no undue mechanical strain is applied to the packaged device. It is recommended that the beam-lead devices be handled through use of a vacuum pencil using an appropriate size vacuum needle or a pointed wooden stick such as a sharpened Q-tip or match stick. The device will adhere to the point and can easily be removed from the container and positioned accurately for bonding without damage. Such handling should be done under a binocular microscope with magnification in the range of 20X to 30X. Special handling precautions are also required to avoid electrical damage, such as static discharge. Bonding The DSG9500-000 can best be bonded to substrates by means of thermocompression bonding. Essentially this type of bonding involves pressing the gold beam of the device against the goldplated metalized substrate under proper conditions of heat and pressure so that a metallurgical bond joint between the two occurs. Procedure The beam-lead devices to be bonded should be placed on a clean, hard surface such as a microscope slide. It is recommended that the beam side of the device be down so that this side will be toward the substrate when bonded. The device can be picked up by pressing lightly against one beam with the heated tip. The substrate can then be appropriately positioned under the tip and the device brought down against the substrate, with proper pressure applied by means of the weld head. A bonding tip temperature in the 350 °C to 450 °C range is recommended along with a bonding force of 50 to 70 grams. The bonding time is in the range of 2 to 3 seconds. Optimum bonding conditions should be determined by trial and error to compensate for slight variations in the condition of the substrate, bonding tip, and the type of device being bonded. Equipment The heat and pressure are obtained through use of a silicon carbide bonding tip with a radius of two to three mils. Such an item is available from several commercial sources. In order to supply the required tip-travel and apply proper pressure, a standard miniature weld head can be used. Also available is a heated wedge shank which is held by the weld head and in turn holds the tip and supplies heat to it. The wedge shank is heated by means of a simple AC power supply or a pulse-type heated tool. Substrate For optimum bonding, a gold-plated surface at least 100-microinches thick is necessary. Although it is possible to bond to relatively soft metalized substrate material such as epoxy-fiberglass, etc., optimum bonding occurs when a hard material such as ceramic can be used. Quality If a good bond has been obtained, it is impossible to separate the beam-lead device from the metalized substrate without damage. If the device is destructively removed, the beam will tear away, leaving the bonded portion attached to the substrate. Beam–Lead Packaging The DSG9500-000 is shipped in 2” x 2” black gel packs. The beam-leads are mounted on the gel, and the devices are covered with a piece of lint-free release paper, on top of which is placed a piece of conductive foam. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 4 December 29, 2008 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200137 Rev. H Data Sheet • DSG9500-000 Copyright © 2002, 2003, 2004, 2005, 2006, 2007, 2008, Skyworks Solutions, Inc. All Rights Reserved. Information in this document is provided in connection with Skyworks Solutions, Inc. (“Skyworks”) products or services. These materials, including the information contained herein, are provided by Skyworks as a service to its customers and may be used for informational purposes only by the customer. Skyworks assumes no responsibility for errors or omissions in these materials or the information contained herein. Skyworks may change its documentation, products, services, specifications or product descriptions at any time, without notice. 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Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 200137 Rev. H • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • December 29, 2008 5