NSC DS36149J Hex mos driver Datasheet

DS16149/DS36149, DS16179/DS36179 Hex MOS Drivers
General Description
Features
The DS16149/DS36149 and DS16179/DS36179 are Hex
MOS drivers with outputs designed to drive large capacitive
loads up to 500 pF associated with MOS memory systems.
PNP input transistors are employed to reduce input currents
allowing the large fan-out to these drivers needed in memory systems. The circuit has Schottky-clamped transistor logic for minimum propagation delay, and a disable control that
places the outputs in the logic ‘‘1’’ state (see truth table).
This is especially useful in MOS RAM applications where a
set of address lines has to be in the logic ‘’1’’ state during
refresh.
The DS16149/DS36149 has a 15 X resistor in series with
the outputs to dampen transients caused by the fast-switching output. The DS16179/DS36179 has a direct low impedance output for use with or without an external resistor.
Y
Y
Y
High speed capabilities
# Typ 9 ns driving 50 pF
# Typ 29 ns driving 500 pF
Built-in 15 X damping resistor (DS16149/DS36149)
Same pin-out as DM8096 and DM74366
Schematic Diagram
TL/F/7553 – 1
C1995 National Semiconductor Corporation
TL/F/7553
RRD-B30M105/Printed in U. S. A.
DS16149/DS36149, DS16179/DS36179 Hex MOS Drivers
February 1986
Absolute Maximum Ratings (Note 1)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage
Logical ‘‘1’’ Input Voltage
Logical ‘‘0’’ Input Voltage
Supply Voltage (VCC)
Temperature (TA)
DS16149, DS16179
DS36149, DS36179
7.0V
7.0V
Min
4.5
Max
5.5
Units
V
b 55
a 125
a 70
§C
§C
0
b 1.5V
b 65§ C to a 150§ C
Storage Temperature Range
Maximum Power Dissipation* at 25§ C
Cavity Package
1371 mW
Molded Package
1280 mW
Lead Temperature (Soldering 10 seconds)
300§ C
*Derate cavity package 9.1 mW/§ C above 25§ C; derate molded package
10.2 m/W§ C above 25§ C.
DC Electrical Characteristics (Notes 2 and 3)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
0.8
V
VIN(1)
Logical ‘‘1’’ Input Voltage
VIN(0)
Logical ‘‘0’’ Input Voltage
IIN(1)
Logical ‘‘1’’ Input Current
VCC e 5.5V, VIN e 5.5V
0.1
40
mA
IIN(0)
Logical ‘‘0’’ Input Current
VCC e 5.5V, VIN e 0.5V
b 50
b 250
mA
VCLAMP
Input Clamp Voltage
VCC e 4.5V, IIN e b18 mA
b 0.75
b 1.2
V
VOH
Logical ‘‘1’’ Output Voltage
(No Load)
VCC e 4.5V, IOH e b10 mA
Logical ‘‘0’’ Output Voltage
(No Load)
VCC e 4.5V, IOL e 10 mA
VOL
VOH
2.0
Logical ‘‘1’’ Output Voltage
(With Load)
VCC e 4.5V, IOH e b1.0 mA
VOL
Logical ‘‘0’’ Output Voltage
(With Load)
VCC e 4.5V, IOL e 20 mA
IID
Logical ‘‘1’’ Drive Current
IOD
Logical ‘‘0’’ Drive Current
ICC
Power Supply Current
V
DS16149/DS16179
3.4
4.3
V
DS36149/DS36179
3.5
4.3
V
DS16149/DS16179
0.25
0.4
V
DS36149/DS36179
0.25
0.35
V
DS16149
2.4
3.5
V
DS16179
2.5
3.5
V
DS36149
2.6
3.5
V
DS36179
2.7
3.5
0.6
1.1
V
DS16179
0.4
0.5
V
DS36149
0.6
1.0
V
DS36179
0.4
0.5
VCC e 4.5V, VOUT e 0V, (Note 4)
VCC e 4.5V, VOUT e 4.5V, (Note 4)
VCC e 5.5V
V
DS16149
Disable Inputs e 0V
All Other Inputs e 3V
mA
150
mA
33
All Inputs e 0V
V
b 250
14
60
mA
20
mA
Switching Characteristics (VCC e 5V, TA e 25§ C) (Note 4)
Symbol
tS g
tS ’
tF
Parameter
Storage Delay Negative Edge
Storage Delay Positive Edge
Fall Time
Conditions
(Figure 1 )
(Figure 1 )
(Figure 1 )
2
Typ
Max
Units
CL e 50 pF
Min
4.5
7
ns
CL e 500 pF
7.5
12
ns
CL e 50 pF
5
8
ns
CL e 500 pF
8
13
ns
CL e 50 pF
5
8
ns
CL e 500 pF
22
35
ns
Switching Characteristics (VCC e 5V, TA e 25§ C) (Note 4) (Continued)
Symbol
tR
Parameter
Rise Time
Conditions
(Figure 1 )
Typ
Max
Units
CL e 50 pF
Min
6
9
ns
CL e 500 pF
26
35
ns
tLH
Delay from Disable Input
to Logical ‘‘1’’
RL e 2 kX to Gnd,
CL e 50 pF, (Figure 2 )
15
22
ns
tHL
Delay from Disable Input
to Logical ‘‘0’’
RL e 2 kX to VCC,
CL e 50 pF, (Figure 3 )
11
18
ns
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.
Note 2: Unless otherwise specified min/max limits apply across the b 55§ C to a 125§ C temperature range for the DS16149 and DS16179 and across the 0§ C to
a 70§ C range for the DS36149 and DS36179. All typical values are for TA e 25§ C and VCC e 5V.
Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown
as max or min on absolute value basis.
Note 4: When measuring output drive current and switching response for the DS16179 and DS36179 a 15 X resistor should be placed in series with each output.
This resistor is internal to the DS16149/DS36149 and need not be added.
Connection Diagram
Truth Table
Dual In-Line Package
Disable Input
DIS 1
DIS2
0
0
0
1
1
0
0
1
0
1
Input
Output
0
1
X
X
X
1
0
1
1
1
X e Don’t care
TL/F/7553 – 2
Top View
Order Number DS16149J, DS36149J, DS16179J,
DS36179J, DS36149N or DS36179N
See NS Package Number J16A or N16A
AC Test Circuits and Switching Time Waveforms
tS g , tS g , tR, tF
TL/F/7553 – 3
FIGURE 1
3
AC Test Circuits and Switching Time Waveforms (Continued)
TL/F/7553 – 4
FIGURE 2
TL/F/7553 – 5
FIGURE 3
*Internal on DS16149 and DS36149
Note 1: The pulse generator has the following characteristics: ZOUT e 50 X and PRR s 1 MHz. Rise and fall times between 10% and 90% points s 5 ns.
Note 2: CL includes probe and jig capacitance.
Typical Applications
TL/F/7553 – 6
4
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number DS16149J, DS36149J
DS16179J or DS36179J
NS Package Number J16A
5
DS16149/DS36149, DS16179/DS36179 Hex MOS Drivers
Physical Dimensions inches (millimeters) (Continued)
Molded Dual-In-Line Package (N)
Order Number DS36149N, DS36149N
NS Package Number N16A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
National Semiconductor
Corporation
1111 West Bardin Road
Arlington, TX 76017
Tel: 1(800) 272-9959
Fax: 1(800) 737-7018
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
National Semiconductor
Europe
Fax: (a49) 0-180-530 85 86
Email: cnjwge @ tevm2.nsc.com
Deutsch Tel: (a49) 0-180-530 85 85
English Tel: (a49) 0-180-532 78 32
Fran3ais Tel: (a49) 0-180-532 93 58
Italiano Tel: (a49) 0-180-534 16 80
National Semiconductor
Hong Kong Ltd.
13th Floor, Straight Block,
Ocean Centre, 5 Canton Rd.
Tsimshatsui, Kowloon
Hong Kong
Tel: (852) 2737-1600
Fax: (852) 2736-9960
National Semiconductor
Japan Ltd.
Tel: 81-043-299-2309
Fax: 81-043-299-2408
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
Similar pages