ON MPS5172G General purpose transistor npn silicon Datasheet

MPS5172
General Purpose Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
25
Vdc
Collector−Base Voltage
VCBO
25
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Power Dissipation @ TA = 60°C
PD
450
mW
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
2
BASE
1
EMITTER
1
2
3
TO−92 (TO−226)
CASE 29
STYLE 1
THERMAL CHARACTERISTICS
MARKING DIAGRAM
MPS
5172
AYWWG
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
MPS5172 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPS5172
MPS5172G
MPS5172RLRM
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 2
1
MPS5172RLRMG
Package
Shipping
TO−92
5000 / Bulk
TO−92
(Pb−Free)
5000 / Bulk
TO−92
2000/Ammo Pack
TO−92
(Pb−Free)
2000/Ammo Pack
Publication Order Number:
MPS5172/D
MPS5172
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
25
−
Vdc
Collector Cutoff Current
(VCE = 25 V, IB = 0)
ICES
−
100
nAdc
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TA = 100°C)
ICBO
−
−
100
10
nAdc
mAdc
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
−
100
nAdc
hFE
100
500
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
−
0.25
Vdc
Base−Emitter On Voltage
(IC = 10 mAdc, VCE = 10 V)
VBE(on)
0.5
1.25
Vdc
Collector−Base Capacitance
(VCB = 10 V, f = 1.0 MHz)
Ccb
1.6
10
pF
Small−Signal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
100
750
−
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 10 mA, IB = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(VCE = 10 V, IC = 10 mA)
SMALL−SIGNAL CHARACTERISTICS
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
MPS5172
TYPICAL STATIC CHARACTERISTICS
h FE , DC CURRENT GAIN
400
TJ = 125°C
25°C
200
−55°C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0 10
20
30
50
70 100
1.0
100
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10
TA = 25°C
PULSE WIDTH = 300 ms
80 DUTY CYCLE ≤ 2.0%
300 mA
200 mA
40
100 mA
20
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Collector Saturation Region
V, VOLTAGE (VOLTS)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
VCE(sat) @ IC/IB = 10
0.1
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
40
Figure 3. Collector Characteristics
1.4
1.2
400 mA
60
0
20
IB = 500 mA
50
1.6
0.8
25°C to 125°C
0
*qVC for VCE(sat)
− 55°C to 25°C
−0.8
25°C to 125°C
−1.6
−2.4
0.1
100
*APPLIES for IC/IB ≤ hFE/2
Figure 4. “On” Voltages
qVB for VBE
0.2
− 55°C to 25°C
0.5
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
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3
50
100
MPS5172
500
10
TJ = 25°C
f = 100 MHz
300
TJ = 25°C
f = 1.0 MHz
7.0
VCE = 20 V
200
C, CAPACITANCE (pF)
f,
T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
TYPICAL DYNAMIC CHARACTERISTICS
5.0 V
100
Cib
5.0
Cob
3.0
2.0
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Current−Gain − Bandwidth Product
Figure 7. Capacitance
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4
10
20
50
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MPS5172
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 9
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
t2
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) • RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
Figure 8. Thermal Response
104
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
IC, COLLECTOR CURRENT (nA)
VCC = 30 Vdc
103
102
ICEO
101
ICBO
AND
100
ICEX @ VBE(off) = 3.0 Vdc
10−1
10−2
− 40 − 20
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 10.
IC, COLLECTOR CURRENT (mA)
400
1.0 ms
200
100
60
40
TC = 25°C
TA = 25°C
dc
TJ = 150°C
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
2.0
10 ms
1.0 s
dc
20
4.0
100 ms
4.0
6.0 8.0 10
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
A train of periodical power pulses can be represented by
the model as shown in Figure 9. Using the model and the device thermal response the normalized effective transient
thermal resistance of Figure 8 was calculated for various
duty cycles.
To find ZqJA(t), multiply the value obtained from Figure
8 by the steady state value RqJA.
Example:
The MPS3904 is dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 8 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com.
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 11 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 8. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
Figure 11.
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5
MPS5172
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
N
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
STYLE 1:
PIN 1.
2.
3.
3.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
EMITTER
BASE
COLLECTOR
SOURCE
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MPS5172/D
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