GF10A THRU GF10M C R GP S E M I C O N D U C T O R Surface Mount Glass Passivated Rectifier Reverse Voltage - 50 to 1000 Volts Forward Current -1.0Ampere SILICON RECTIFIER Ｒ SMA(DO-214AC) FEATURES GPRC( Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junctionPlastic package has ０．１１０（２．７９） ０．１００（２．５４） Underwriters Laboratory Flammability Classification 94V-0 ０．０６５（１．６５） ０．０４９（１．２５） Construction utilizes void-free molded plastic technique For surface mounted applications ０．１７７（４．５０） ０．１５７（３．９９） Built-in strain relief, ideal for automated placement High temperature soldering: ０．０１２（０．３０５） ０．００６（０．１５２） 250° C/10 seconds at terminals MECHANICAL DATA ０．０９０（２．２９） ０．０７８（１．９８） Case: JEDEC DO-214AC molded plastic over glass passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 ０．００８（０．２０３） ＭＡＸ ０．０６０（１．５２） ０．０３０（０．７６） Polarity: Color band denotes cathode end Polarity: Color band denotes cathode end Weight: 0.002 oz., 0.064 g ０．２０８（５．２８） ０．１９４（４．９３） Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave 60Hz,,resistive or inductive load. For capacitive load, derate by 20%.) Symbols GF 10A GF 10B GF 10D GF 10G GF 10J GF 10K GF 10M 50 100 200 400 600 800 1000 35 70 140 280 420 560 700 Maximum DC Blocking Voltage VRRM VRMS VDC 50 100 200 400 600 800 1000 Maximum average Forward Rectified Current 0.375"(9.5mm) lead length at TA=75 C I(AV) 1.0 Amp Peak Forward Surge Current (8.3ms half sinewave superimposed on rated load (JEDEC method) TA=75 C IFSM 30.0 Amps VF 1.0 Volts Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum Instantaneous Forward Voltage at 1.0 A Maximum Reverse current at rated DC Blocking Voltage TA =25 C TA =100 C Typical Thermal resistance (Note 2) 5.0 IR R R 75 JL 27 Volts Volts Volts A 50.0 JA Units C/W PF Typical Junction Capacitance(Note 1) CJ 12 Maximum DC Blocking Voltage temperature TA TJ TSTG +150 C -50 to+175 C Operating and Storage temperature Range Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V DC. 2.Thermal resistance from junction to ambient and from junction to lead at 0.375"(9.5mm)lead length, P.C.B. mounted 7-14 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM SILICON RECTIFIER RATINGS AND CHARACTERISTIC CURVES GF10A THRUGF10M FIG.1-FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS ０．８ INSTANTANEOUS FORWARD CURRENT( AMPERES) AVERAGE FORWARD CURRENT AMPERES １．０ ０．６ ０．４ SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD ０．２ ０ ０ ２５ ５０ ７５ １００ １２５ １５０ １７５ LEAD TEMPERATURE ( C) ２０ １０ １ TJ=25 C PULSE WIDTH=300 S 1% DUTY CYCLE ０．１ ０．０１ FIG.3-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT ０．６ ０．８ １．０ １．２ １．４ １．５ INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) ４０ ３０ FIG.4-TYPICAL REVERSE CHARACTERISTICS ２０ １０ １０ INSTANTANEOUS REVERSE CURRENT ( A) PEAK FORWARD SURGE CURRENT(AMPERES) ５０ ０ １ １０ １００ NUMBER OF CYCLES AT 60Hz FIG.5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE(pF) １００ TJ=100 C １．０ ０．１ TJ=25 C ０．０１ ０ ２０ ４０ ６０ ８０ １００ １２０ １４０ TJ=25 C PERCENT OF RATED PEAK REVERSE VOLTAGE % １０ １ ０．１ １ １０ １００ REVERSE VOLTAGE. (VOLTS) 7-15 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM