EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions (Unit : mm) EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Each lead has same dimensions Abbreviated symbol : M01 zApplications Switching zPackaging specifications Package Type zInner circuit Taping Code T2R Basic ordering unit (pieces) 8000 (6) (5) (4) ∗1 EM6M1 ∗2 ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage VDSS VGSS ID IDP∗1 Drain current Continuous Pulsed Power dissipation Channel temperature Range of storage temperature PD ∗2 Tch Tstg Limits Tr1 : N-ch Tr2 : P-ch −20 30 ± 20 ±12 ±0.1 ±0.2 ±0.4 ±0.4 150 120 150 −55 to +150 Unit V V A A mW / TOTAL mW / ELEMENT °C °C ∗1 Pw 10µs, Duty cycle 1% ∗2 Mounted on a ceramic board zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 1/6 EM6M1 Transistors N-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − 30 − 0.8 − − 20 − − − − − − − − − − Typ. − − − − 5 7 − 13 9 4 15 35 80 80 0.9 0.2 0.2 Max. ±1 − 1 1.5 8 13 − − − − − − − − − − − Unit µA V µA V Ω Ω mS pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±20V, VDS=0V ID=10µA, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100µA ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA VDS=5V VGS=0V f=1MHz VDD 5V ID=10mA VGS=5V RL=500Ω RG=10Ω VDD 15V, ID=0.1A VGS=4.5V RL=150Ω, RG=10Ω Parameter Symbol Min. Gate-source leakage − IGSS Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −0.7 − Static drain-source on-state ∗ RDS (on) − resistance − Forward transfer admittance Yfs ∗ 0.2 Input capacitance Ciss − Coss Output capacitance − Crss Reverse transfer capacitance − td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − Fall time − tf ∗ Total gate charge − Qg ∗ − Gate-source charge Qgs ∗ − Qgd ∗ Gate-drain charge Typ. − − − − 1.0 1.1 2.0 − 50 5 5 9 6 35 45 1.2 0.2 0.2 Max. ±10 − −1 −2.0 1.5 1.6 3.0 − − − − − − − − − − − Unit µA V µA V Ω Ω Ω S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −0.2A, VGS= −4.5V ID= −0.2A, VGS= −4V ID= −0.2A, VGS= −2.5V VDS= −10V, ID= −0.15A VDS= −10V VGS= 0V f=1MHz VDD −15V ID= −0.15A VGS= −4.5V RL= 100Ω RG= 10Ω VDD −15V, ID= −0.2A VGS= −4.5V RL= 75Ω, RG= 10Ω Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ RDS (on) Yfs ∗ Ciss Coss Crss td (on) ∗ tr ∗ td (off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ ∗Pulsed P-ch zElectrical characteristics (Ta=25°C) ∗Pulsed 2/6 EM6M1 Transistors N-ch zElectrical characteristic curve 50 DRAIN CURRENT : ID(A) 50m 20m 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 0.2m 0.1m 0 1 3 2 4 Ta=125°C 75°C 25°C −25°C 20 10 5 2 1 0.5 0.001 0.002 0.005 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Ta=25°C Pulsed 10 ID=0.1A ID=0.05A 0 0 5 10 15 20 10 5 2 1 0.5 0.001 0.002 10 Coss Crss 1 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 200m VGS=0V Pulsed 100m Ta=−25°C 25°C 75°C 125°C 0.05 0.02 0.01 0.005 0.002 50m 20m Ta=125°C 75°C 25°C −25°C 10m 5m 2m 1m 0.5m 0.2m 0.001 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1000 0 0.5 1 1.5 Fig.6 Reverse Drain Current vs. Source-Drain Voltage ( Ι ) Ta=25°C VDD=5V VGS=5V RG=10Ω tf 500 0.1m SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Forward Transfer Admittance vs. Drain Current SWITHING TIME : t (ns) CAPACITANCE : C (pF) 0.5 DRAIN CURRENT : ID (A) Ciss 2 0.2 VDS=3V Pulsed 0.1 Ta=25°C f=1MHZ VGS=0V 5 0.1 0.2 Fig.4 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 20 0.05 0.5 GATE-SOURCE VOLTAGE : VGS (V) 50 0.02 Fig.2 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) Fig.1 Typical Transfer Characteristics 5 0.01 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 20 DRAIN CURRENT : ID(A) GATE-SOURCE VOLTAGE : VGS(V) 15 50 VGS=4V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS=3V Pulsed 100m SOURCE CURRENT : IS (A) 200m td(off) 200 100 50 20 tr td(on) 10 5 0.5 0.1 0.2 0.5 1 2 5 10 20 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.7 Typical Capacitance vs. Drain-Source Voltage 50 2 0.1 0.2 0.5 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) Fig.8 Switching Characteristics 3/6 EM6M1 Transistors P-ch zElectrical characteristic curve 0.001 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 Ta=125°C 75°C 25°C −25°C 1 0.1 0.01 GATE-SOURCE VOLTAGE : −VGS (V) 0.1 VGS= −2.5V 1 VGS= −4V VGS= −4.5V DRAIN CURRENT : −ID (A) CAPACITANCE : C (pF) Ciss 10 Coss SWITCHING TIME : t (ns) 1000 0.1 4 3 ID= −0.2A 2 ID= −0.1A 1 0 1 10 100 DRAIN-SOURCE VOLTAGE : −VDS (V) Fig.7 Typical Capacitance vs. Drain-Source Voltage Ta=25°C VDD= −15V VGS= −4.5V RG=10Ω Pulsed tf td(off) 10 td(on) tr 1 0.01 1 2 3 4 5 6 7 8 9 10 GATE-SOURCE VOLTAGE : −VGS (V) 100 Crss 1 Ta=25°C Pulsed 0 0.1 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 100 1 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) DRAIN CURRENT : −ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) 0 0.01 0.1 5 Ta=25°C Pulsed 0.1 0.01 1 Ta=25°C f=1MHz VGS=0V 1 DRAIN CURRENT : −ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 1 0.1 0.01 Ta=125°C 75°C 25°C −25°C 0.1 0.01 1 Fig.2 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 10 VGS= −2.5V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 VGS= −4V Pulsed DRAIN CURRENT : −ID (A) Fig.1 Typical Transfer Characteristics 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.01 10 VGS= −4.5V Pulsed Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 4.5 GATE-SOURCE VOLTAGE : −VGS (V) Ta=125°C 75°C 25°C −25°C 0.1 10 VDS= −10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : −ID (A) 1 Ta=25°C 4 VDD= −15V ID= −0.2A 3.5 RG= 10Ω Pulsed 3 2.5 2 1.5 1 0.5 0 0.1 DRAIN CURRENT : −ID (A) Fig.8 Switching Characteristics 1 0 0.2 0.4 0.6 0.8 1 1.2 TOTAL GATE CHARGE : Qg (nC) Fig.9 Dynamic Input Characteristics 4/6 EM6M1 Transistors SOURCE CURRENT : −IS (A) 1 VGS=0V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.10 Source Current vs. Source-Drain Voltage N-ch zMeasurement circuit Pulse Width VGS RG ID VDS RL D.U.T. 90% 50% 10% VGS 50% 10% VDS VDD 10% td(off) ton Fig.9 Switching Time Test Circuit 90% 90% tr td(on) tf toff Fig.10 Switching Time Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.11 Gate Charge Measurement Circuit Fig.12 Gate Charge Waveform 5/6 EM6M1 Transistors P-ch zMeasurement circuit Pulse Width VGS VGS 10% 50% ID VDS RL D.U.T. RG 50% 90% 10% VDD 10% 90% VDS td(on) tr 90% td(off) ton tf toff Fig.12 Switching Time Waveforms Fig.11 Switching Time Test Circuit VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.13 Gate Charge Measurement Circuit Fig.14 Gate Charge Waveform 6/6 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0