AOTF11N62 620V,11A N-Channel MOSFET General Description Product Summary The AOTF11N62 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 720V@150℃ 11A RDS(ON) (at VGS=10V) < 0.65Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF11N62L Top View D TO-220F G AOTF11N62 D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOTF11N62 Symbol Drain-Source Voltage VDS 620 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C AOTF11N62L ±30 11* ID Units V V 11* 8* 8* A IDM 39 Avalanche Current C IAR 4.8 A Repetitive avalanche energy C EAR 345 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 690 5 mJ V/ns W PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev 1: July 2012 50 39 0.4 0.3 -55 to 150 W/ oC °C 300 °C AOTF11N62 65 2.5 www.aosmd.com AOTF11N62L 65 3.2 Units °C/W °C/W Page 1 of 6 AOTF11N62 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 620 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=250µA, VGS=0V, TJ=150°C 720 V ID=250µA, VGS=0V 0.67 V/ oC VDS=620V, VGS=0V 1 VDS=500V, TJ=125°C 10 ±100 3.3 µA 3.9 4.5 nΑ V 0.65 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A 0.56 gFS Forward Transconductance VDS=40V, ID=5.5A 12 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 11 A ISM Maximum Body-Diode Pulsed Current 39 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge S 0.73 1320 1656 1990 pF 100 146 195 pF 6.5 11.2 16 pF 1.7 3.5 5.3 Ω 24 30.6 37 VGS=10V, VDS=480V, ID=11A nC 9.6 nC Qgd Gate Drain Charge 9.6 nC tD(on) Turn-On DelayTime 39 ns tr Turn-On Rise Time 58 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=11A,dI/dt=100A/µs,VDS=100V 400 500 600 Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V 4.7 5.9 7.1 Body Diode Reverse Recovery Time VGS=10V, VDS=300V, ID=11A, RG=25Ω 92 ns 42 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=4.8A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: July 2012 www.aosmd.com Page 2 of 6 AOTF11N62 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 100 10V -55°C VDS=40V 6.5V 16 10 ID(A) ID (A) 12 6V 125°C 8 1 4 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 1.4 8 10 Normalized On-Resistance 3 1.2 RDS(ON) (Ω Ω) 6 VGS(Volts) Figure 2: Transfer Characteristics 1.0 0.8 VGS=10V 0.6 2.5 VGS=10V ID=5.5A 2 1.5 1 0.5 0 0.4 0 4 -100 8 12 16 20 24 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.2 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 0.9 1.0E-04 1.0E-05 0.8 -100 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature Rev1: July 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOTF11N62 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=480V ID=11A 12 Ciss Capacitance (pF) VGS (Volts) 1000 9 6 Coss 100 10 3 Crss 1 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 50 100 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 10µs 10ms TJ(Max)=150°C TC=25°C 0.1s 1s DC 0.01 100µs RDS(ON) limited 10 ID (Amps) 1ms 1 0.1 10µs 100µs RDS(ON) limited 10 ID (Amps) 100 1ms 1 10ms TJ(Max)=150°C TC=25°C 0.1 DC 0.1s 1s 0.01 1 10 100 1000 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOTF11N62 (Note F) 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF11N62L (Note F) 12 Current rating ID(A) 10 8 6 4 2 0 0 75 100 125 TCASE (°C) Figure 11: Current De-rating (Note B) Rev1: July 2012 25 50 150 www.aosmd.com Page 4 of 6 AOTF11N62 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOTF11N62 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF11N62L (Note F) Rev1: July 2012 www.aosmd.com Page 5 of 6 AOTF11N62 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev1: July 2012 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6