IPD110N12N3 G IPS110N12N3 G OptiMOS 3Power-Transistor TM Features Product Summary • N-channel, normal level V DS 120 V R DS(on),max 11 mΩ ID 75 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPS110N12N3 G IPD110N12N3 G Package PG-TO251-3 PG-TO252-3 Marking 110N12N 110N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 75 T C=100 °C 54 Unit A Pulsed drain current2) I D,pulse T C=25 °C 300 Avalanche energy, single pulse E AS I D=75 A, R GS=25 Ω 120 mJ Gate source voltage3) V GS ±20 V Power dissipation P tot 136 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V Rev. 2.2 55/175/56 page 1 2009-07-09 IPD110N12N3 G IPS110N12N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.1 minimal footprint - - 75 6 cm2 cooling area 4) - - 50 120 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=83 µA 2 3 4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=75 A - 9.2 11 mΩ Gate resistance RG - 1.5 - Ω Transconductance g fs 42 83 - S |V DS|>2|I D|R DS(on)max, I D=75 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2009-07-09 IPD110N12N3 G IPS110N12N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 3240 4310 - 408 543 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 22 - Turn-on delay time t d(on) - 16 - Rise time tr - 16 - Turn-off delay time t d(off) - 24 - Fall time tf - 8 - Gate to source charge Q gs - 18 - Gate to drain charge Q gd - 12 - - 20 - V GS=0 V, V DS=60 V, f =1 MHz V DD=60 V, V GS=10 V, I D=75 A, R G=1.6 Ω pF ns Gate Charge Characteristics 5) V DD=60 V, I D=75 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 49 65 Gate plateau voltage V plateau - 5.6 - Output charge Q oss - 56 75 nC - - 75 A - - 300 - 1 1.2 - 90 ns - 249 nC V DD=60 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) Rev. 2.2 T C=25 °C V GS=0 V, I F=75 A, T j=25 °C V R=60 V, I F=I S, di F/dt =100 A/µs V See figure 16 for gate charge parameter definition page 3 2009-07-09 IPD110N12N3 G IPS110N12N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 140 80 70 120 60 100 I D [A] P tot [W] 50 80 40 60 30 40 20 20 10 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 1 µs 10 µs 102 100 µs 100 DC 101 0.5 Z thJC [K/W] I D [A] 1 ms 10 ms 0.2 0.1 10 10 -1 0.05 0.02 0 0.01 single pulse 10-1 10 10-2 -1 10 0 10 1 10 2 10 3 V DS [V] Rev. 2.2 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-07-09 IPD110N12N3 G IPS110N12N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 250 30 10 V 8V 4.5 V 7V 5V 25 200 150 R DS(on) [mΩ] 20 I D [A] 6.5 V 100 6V 5.5 V 15 6V 10 10 V 5.5 V 50 5 5V 4.5 V 0 0 0 1 2 3 4 5 0 20 V DS [V] 40 60 80 60 80 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 100 80 150 g fs [S] I D [A] 60 100 40 175 °C 50 25 °C 20 0 0 0 2 4 6 8 Rev. 2.2 0 20 40 I D [A] V GS [V] page 5 2009-07-09 IPD110N12N3 G IPS110N12N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=75 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 25 4 3.5 20 830 µA 3 V GS(th) [V] R DS(on) [mΩ] 83 µA 2.5 15 98 % typ 10 2 1.5 1 5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 25 °C 175 °C 103 175 °C, 98% 102 I F [A] C [pF] Coss 102 25 °C, 98% 101 Crss 101 100 0 20 40 60 80 100 V DS [V] Rev. 2.2 0 0.5 1 1.5 2 V SD [V] page 6 2009-07-09 IPD110N12N3 G IPS110N12N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=67 A pulsed parameter: T j(start) parameter: V DD 103 10 96 V 8 60 V 102 24 V V GS [V] I AS [A] 6 25 °C 4 100 °C 150 °C 101 2 100 0 100 101 102 103 0 10 t AV [µs] 20 30 40 50 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 135 V GS Qg 130 V BR(DSS) [V] 125 120 V g s(th) 115 110 Q g(th) Q sw Q gs 105 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.2 page 7 2009-07-09 IPD110N12N3 G IPS110N12N3 G PG-TO-251SL : Outline Rev. 2.2 page 8 2009-07-09 IPD110N12N3 G IPS110N12N3 G PG-TO252-3: Outline Rev. 2.2 page 9 2009-07-09 IPD110N12N3 G IPS110N12N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 10 2009-07-09