isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors D45H11 DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type D44H11 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general pourpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A PC Collector Power Dissipation @TC=25℃ 50 W Tj Junction Temperature -55~150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors D45H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-EmitterSaturation Voltage IC= -8A ;IB= -0.4 A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -8A ;IB= -0.8 A -1.5 V ICES Collector Cutoff Current VCE=Rated VCEO; VBE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -2A ; VCE= -1V 60 hFE-2 DC Current Gain IC= -4A ; VCE= -1V 40 COB Output Capacitance VCB= -10V,f= 1.0MHz 230 pF Current-Gain—Bandwidth Product IC=-0.5A;VCE=-10V;ftest=20MHz 40 MHz fT isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark