ATMEL ATA6843 Bldc motor driver and lin system basis chip Datasheet

ATA6843/ATA6844
BLDC Motor Driver and LIN System Basis Chip
DATASHEET
Features
● Broad operation voltage range from 5.25V to 32V
● Atmel® ATA6843 temperature range TJ = 150°C
● Atmel ATA6844 extended temperature range TJ = 200°C
● Direct driving of six external NMOS transistors with a maximum switching
frequency of 50kHz
● Integrated charge pump to provide gate voltages for high-side drivers and to supply
the gate of the external battery reverse protection NMOS
● Built-in 5V/3.3V voltage regulator with current limitation
● Reset signal for the microcontroller
● Sleep Mode with supply current of typically < 45µA
● Wake-up via LIN bus or high voltage input
● Programmable window watchdog
● Battery overvoltage protection and battery undervoltage management
● Overtemperature warning and protection (shutdown)
● Jump start compatible
● 200mA peak current for each output driver
● LIN transceiver conformal to LIN 2.1 and SAEJ2602-2 with outstanding EMC and
ESD performance
● QFN48 package 7mm × 7mm
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1.
Description
The Atmel® ATA6843 and Atmel ATA6844 are system basis chips for three-phase brushless DC motor controllers designed
in Atmel’s state-of-the-art 0.8µm SOI technology SMART-I.S.™1. In combination with a microcontroller and six discrete
power MOSFETs, the system basis chip forms a BLDC motor control unit for automotive applications. In addition, the circuits
provide a 3.3V/5V linear regulator and a window watchdog.
The circuit includes various control and protection functions like overvoltage and overtemperature protection, short circuit
detection, and undervoltage management. Thanks to these function blocks, the driver fulfils a maximum of safety
requirements and offers a high integration level to save cost and space in various applications. The target applications are
most suitable for the automotive market due to the robust technology and the high qualification level. Atmel ATA6844, in
particular, is designed for applications in a high-temperature environment.
Figure 1-1. Block Diagram
Charge Pump
/RESET
WD
VINT
Regulator
/IH1-3
DG2
RX
Hall B
Hall A
LIN
2
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
WDEN
GND
EN
SCREF
Hall C
WD
Timer
LIN
LINGND
TX
Driver
Control
Atmel ATA6843/44
DG3
LIN
Microcontroller
DG1
High-side
Driver 3
H3
High-side
Driver 2
H2
High-side
Driver 1
H1
S1
S2
Supervisor:
Short Circuit
Overtemperature
Undervoltage
COAST
Oscillator
CC
Timer
CC
SLEEP
Control
Logic
RWD
IL1-3
VBG
PBAT
CPOUT
CPHI2
CPLO2
CPHI1
CPLO1
VG
VG
Regulator
VCC
Regulator
Hall C
Hall B
S3
Low-side
Driver 1
L1
Low-side
Driver 2
L2
Low-side
Driver 3
L3
PGND
VCC
VINT
VBAT
VMODE
VBAT
Hall A
2.
Pin Configuration
/COAST
EN
VBAT
NC
VCC
PGND
L3
L2
L1
VG
PBAT
NC
Figure 2-1. Pinning QFN48
CPLO1
CPHI1
CPLO2
CPHI2
CPOUT
S1
H1
S2
H2
S3
H3
DG3
IL1
/IH1
RXD
DG1
DG2
IL3
/IH3
IL2
/IH2
48 47 46 45 44 43 42 41 40 39 38 37
36
1
35
2
34
3
33
4
Atmel YWW
32
5
6
ATA6843/ATA6844 31
30
7
ZZZZZ-AL
29
8
28
9
27
10
26
11
25
12
13 14 15 16 17 18 19 20 21 22 23 24
LIN
NC
TXD
VMODE
VINT
RWD
CC
/RESET
WD
WDEN
SLEEP
SCREF
NC
GND
LINGND
Note:
YWW Date code (Y = Year - above 2000, WW = week number)
ATA683x Product name
ZZZZZ Wafer lot number
AL Assembly sub-lot number
Table 2-1.
Pin Description
Pin
Symbol
I/O
1
VMODE
I
Function
2
VINT
I/O
3
RWD
I
4
CC
I/O
RC combination to adjust cross conduction time
5
/RESET
O
Reset signal for microcontroller
6
WD
I
Watchdog trigger signal
7
WDEN
I
Enable and disable the watchdog
8
SLEEP
I
Microcontroller output to switch system in Sleep Mode
9
SCREF
I
Short circuit comparator Reference input
10
NC
11
GND
12
13
14
NC
15
TXD
I
Transmit signal to LIN bus from microcontroller
16
IL3
I
Control Input for output L3
17
/IH3
I
Control Input for output H3
18
IL2
I
Control Input for output L2
19
/IH2
I
Control Input for output H2
20
IL1
I
Control Input for output L1
21
/IH1
I
Control Input for output H1
22
RXD
O
Receive signal from LIN bus for microcontroller
Selector for VCC and interface logic voltage level
Blocking capacitor
Resistor defining the watchdog interval
Connect to GND
I
Ground
LINGND
I
Ground for LIN, Connect to GND
LIN
I/O
LIN-bus terminal
Connect to GND
ATA6843/ATA6844 [DATASHEET]
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3
Table 2-1.
4
Pin Description
Pin
Symbol
I/O
Function
23
DG1
O
Diagnostic output 1
24
DG2
O
Diagnostic output 2
25
DG3
O
Diagnostic output 3
26
H3
O
Gate voltage high-side 3
27
S3
I/O
Voltage at half bridge 3
28
H2
O
Gate voltage high-side 2
29
S2
I/O
Voltage at half bridge 2
30
H1
O
Gate voltage high-side 1
31
S1
I/O
Voltage at half bridge 1
32
CPOUT
I/O
Charge pump output capacitor
33
CPHI2
I
Charge pump capacitor 2
34
CPLO2
O
Charge pump capacitor 2
35
CPHI1
I
Charge pump capacitor 1
36
CPLO1
O
Charge pump capacitor 1
37
NC
38
PBAT
I
39
VG
I/O
Blocking capacitor
40
L1
O
Gate voltage H-bridge, low-side 1
41
L2
O
Gate voltage H-bridge, low-side 2
42
L3
O
Gate voltage H-bridge, low-side 3
43
PGND
I
Power ground for H-bridge and charge pump
44
VCC
O
5V/100mA supply for microcontroller
45
NC
46
VBAT
I
Supply voltage for IC core (after reverse protection)
47
EN
I
High voltage enable input
48
/COAST
I
Control input for coast function of bridge
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
Connect to GND
Power supply (after reverse protection) for charge pump and
gate drivers
Connect to GND
3.
Functional Description
3.1
Power Supply Unit with Supervisor Functions
3.1.1
Power Supply
The IC has to be supplied by a reverse-protected battery voltage. To prevent damage to the IC, proper external protection
circuitry has to be added. It is recommended to use at least one capacitor combination of storage and RF capacitors be-hind
the reverse protection circuitry, which is connected close to the VBAT and GND pins of the IC.
A fully integrated low-power and low-drop regulator (VINT regulator), stabilized by an external blocking capacitor, provides
the necessary low-voltage supply needed for the wake-up process. A trimmed low-power band gap is used as reference for
the VINT regulator as well as for the VCC regulator. All internal blocks are supplied by VINT regulator. VINT regulator must
not be used for any external supply purposes.
Nothing inside the IC except the logic interface to the external microcontroller is supplied by the 5V/3.3V VCC regulator.
Both voltage regulators are checked by a “power-good comparator”, which keeps the whole chip in reset as long as the
internal supply voltage (VINT regulator output) is too low and gnerates a reset for the external microcontroller if the out-put
voltage of the VCC regulator is not sufficient.
3.1.2
Voltage Supervisor
This function is implemented to protect the IC and the external power MOS transistors from damage due to overvoltage on
PBAT input. In the event of overvoltage (VTHOV) or undervoltage (VTHUV), the external NMOS motor driver transistors will be
switched off. The failure state will be flagged on DG2 pin. It is recommended to block PBAT with an external RF capacitor to
suppress high frequency disturbances.
3.1.3
Temperature Supervisor
An integrated temperature sensor prevents the IC from overheating. If the temperature is above the overtemperature
prewarning threshold TJPW set, the diagnostic pin DG3 will be switched to HIGH to signal this event to the external
microcontroller. The microcontroller should take actions to reduce the power dissipation in the IC. If the temperature rises
above the overtemperature shutdown threshold TJ switch off, the VCC regulator and all output drivers together with the LIN
transceiver will be switched OFF immediately and the /RESET signal will go LOW. Both thresholds have a built-in hysteresis
to avoid oscillations. The IC will return to normal operation (Active Mode) when it has cooled down below the shutdown
threshold. When the junction temperature drops below the pre-warning threshold, bit DG3 will be switched LOW.
ATA6843/ATA6844 [DATASHEET]
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3.2
Active Mode and Sleep Mode
The IC has two modes: Active Mode and Sleep Mode. By default the IC starts in Active Mode (normal operation) after poweron. An Enter Sleep Mode procedure switches the IC from Active Mode to Sleep Mode (standby). Enter Active Mode
procedures wake up the IC back from Sleep Mode. When in Sleep Mode the internal 5V supply (VINT regulator), the EN
input pin, and a small part of the LIN receiver remain active to ensure a proper startup of the system. The VCC regulator is
turned off.
The Enter Sleep Mode and Enter Active Mode procedures are implemented as follows:
Enter Sleep Mode:
Pin SLEEP is a low-voltage input supplied by the VCC regulator. It is ESD protected by diodes against VCC and GND. Thus
the input voltage at pin SLEEP must not go below GND or exceed the output voltage of the VCC regulator. A transition from
HIGH to LOW followed by a permanent LOW signal for a minimum time period tgotosleep (typical 10µs) at pin SLEEP switches
the IC to Sleep Mode as the SLEEP is edge triggered. VCC is switched off in Sleep Mode. It is recommended to keep SLEEP
LOW during normal operation.
Enter Active Mode Using Pin EN:
Pin EN is a high-voltage input for external wake-up signals. Its input structure consists of a comparator with a built-in
hysteresis. It is ESD-protected by diodes against GND and VBAT, and for this reason the applied input voltage must not go
below GND or exceed VBAT. Pulling EN up to VBAT switches the IC to Active Mode. EN is debounced and edge triggered.
Enter Active Mode Using the LIN Interface:
Using the LIN interface provides a second possibility to wake-up the IC (see Figure 3-1). A voltage lower than the LIN prewake detection VLINL at pin LIN activates the internal LIN receiver and starts the wake-up detection timer. A falling edge at
pin LIN followed by a dominant bus level VBUSdom maintained for a minimum time period (Tbus) and ending with a rising edge
leads to a remote wake-up request. The device switches from Sleep Mode to Active Mode. The VCC regulator is activated
and the internal LIN slave termination resistor is switched on.
Figure 3-1. Wake-up Using the LIN Interface
Active Mode
Sleep Mode
Active Mode
SLEEP
Tdebounce
VCC
LIN
Tgotosleep = 10µs
Tbus = 90µs
Regulator Wake-up Time = 4 x TOSC
In Sleep Mode the device has a very low current consumption even during short circuits or floating conditions on the bus. A
floating bus can arise if the Master pull-up resistor is missing, e.g., it is switched off when the LIN-Master is in Sleep Mode or
even if the power supply of the Master node is switched off.
In order to minimize the current consumption IVBAT during voltage levels at the LIN-pin below the LIN pre-wake threshold,
the receiver is activated only for a specific time tmon. If tmon elapses while the voltage at the bus is lower than Pre-wake
detection low (VLINL) and higher than the LIN dominant level, the receiver is switched off again and the circuit changes back
to sleep mode. The current consumption is then the result of IVBAT plus ILINwake. If a dominant state is reached on the bus no
wake-up will occur. Even if the voltage rises above the Pre-wake detection high (VLINH), the IC will stay in sleep mode (see
Figure 3-2). This means the LIN-bus must be above the Pre-wake detection threshold VLINH for a few microseconds before a
new LIN wake-up is possible.
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Figure 3-2. Floating LIN-bus During Sleep Mode
LIN Pre-wake
VLINL
LIN BUS
LIN dominant state
VBUSdom
tmon
IVSsleep
+ ILINwake
IVSfail
IVS
IVSsleep
Mode of
operation
Sleep Mode
Int. Pull-up
Resistor
RLIN
IVSsleep
Wake-up Detection Phase
Sleep Mode
off (disabled)
If the Atmel® ATA6843/ATA6844 is in Sleep Mode and the voltage level at the LIN is in dominant state (VLIN < VBUSdom) for a
time period exceeding tmon (during a short circuit at LIN, for example), the IC switches back to Sleep mode. The VBAT
current consumption then consists of IVBAT plus ILINWAKE. After a positive edge at pin LIN the IC switches directly to Active
Mode (see Figure 3-3).
Figure 3-3. Short Circuit to GND on the LIN-bus During Sleep Mode
LIN Pre-wake
LIN BUS
VLINL
LIN dominant state
VBUSdom
tmon
tmon
IVSfail
IVS
Mode of
operation
Int. Pull-up
Resistor
RLIN
IVSsleep
Sleep Mode
Wake-up Detection Phase
off (disabled)
IVSsleep
+ ILINwake
Sleep Mode
Fail-Safe Mode
on (enabled)
ATA6843/ATA6844 [DATASHEET]
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3.3
5V/3.3V VCC Regulator
The 5V/3.3V regulator is fully integrated. It requires an external electrolytic capacitor in the range of 2.2µF up to 10µF and
with an ESR in the range from 2 to 15 for stability (see Figure 3-4). The output voltage can be configured as either 5V or 3.3V
by connecting pin VMODE to either pin VINT or GND. Since the regulator is not designed to be switched between both
output voltages during operation, it is advisable to hard-wire VMODE pin. The logic levels of the microcontroller interface are
adapted to the VCC regulator output voltage. The maximum output current (IOS1) of the regulator is 100mA. For TJ > 150°C
the IOS1 of Atmel® ATA6844 is reduced to 80mA. The VCC regulator has a built-in short circuit protection. A comparator
checks the output voltage of the VCC regulator and keeps the external microcontroller in reset as long as the voltage is
below the lower operation minimum (shown in Figure 3-5).
Figure 3-4. ESR versus Load Current for External Capacitors with Different Values
ESR versus Load Current at Pin VCC
ESR versus Load Current at Pin VCC
40
25
35
20
ESRmax (CVCC = 10µF)
ESRmax (CVCC = 2.2µF)
25
ESR (Ω)
ESR (Ω)
30
20
15
10
10
ESRmin (CVCC = 10µF)
5
ESRmin (CVCC =2.2µF)
5
0
0
0
25
50
75
100
125
150
Load Current (mA)
Figure 3-5. /RESET as Function of the VCC Output Voltage
VCC
100% VCC
88% VCC
80% VCC
0V
/RESET
8
15
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9189J–AUTO–05/14
0
25
50
75
100
Load Current (mA)
125
150
3.4
Reset and Watchdog Management
The watchdog timing is based on the trimmed internal watchdog oscillator. Its period time TOSC is determined by the external
resistor RWD. A HIGH signal on WDEN pin enables the watchdog function; a LOW signal disables it. Since the WDEN pin is
equipped with an internal pull-up resistor the watchdog is enabled by default. In order to keep the current consumption as
low as possible the watchdog is switched off during Sleep Mode.
The timing diagram in Figure 3-6 shows the watchdog and external reset timing.
Figure 3-6. Timing Diagram of the Watchdog in Conjunction with the /RESET Signal
VCC
88% VCC
Watchdog
trigger edge
/RESET
Watchdog trigger
in t2 window
tresshort
WD
t1
tres
td
tres
t2
t1
t2
td
Reset and lead Reset and lead time, Watchdog cycle,
time, no trigger trigger during lead time
no trigger
t1
Watchdog cycle, trigger
during t2 window
After power-up of the VCC regulator (VCC output exceeds 88% of its nominal value) /RESET output stays LOW for the
timeout period tres (typical 10ms). Subsequently /RESET output switches to HIGH. During the following time td (typical
500ms) a rising edge at the input WD is expected otherwise another external reset will be triggered.
When the watchdog has been correctly triggered for the first time, normal watchdog operation begins. A normal watchdog
cycle consists of two time sections t1 and t2 followed by a short pulse for the time tresshort at /RESET if no valid trigger has
been applied at pin WD during t2. Rising edges on WD pin during t1 also cause a short pulse on /RESET. Start for such a
cycle is always the time of the last rising edge either on WD pin or on /RESET pin.
If the watchdog is disabled (WDEN = LOW), only the initial reset for the time tres after power-up will be generated.
Additional resets will be generated if the VCC output voltage drops below 80% of its nominal value.
The following example demonstrates how to calculate the timing scheme for valid watchdog trigger pulses, which the
external microcontroller has to provide in order to prevent undesired resets.
Example:
Using an external resistor RWD = 33kΩ ±1% results in typical parameters as follows:
TOSC = 12.4µs
t1 = 980 × TOSC = 12.1ms ±10%
t2 = 780 × TOSC = 9.6ms ±10%
t1 + t2 = 21.7ms ±10%
Hence, the minimum time the external microcontroller has to wait before pin WD can be triggered is in worst case
tmin = 1.1 × t1 = 13.3ms. The maximum time for the watchdog trigger on WD pin is tmax = 0.9 × (t1 + t2) = 19.5ms. Thus
watchdog trigger input must remain within tmax – tmin = 6.2ms.
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Other values can be set up by picking a different resistor value for RWD. The dependency of TOSC on the value of RWD is
shown in Figure 3-7.
Figure 3-7. TOSC versus RWD
45
40
TOSC (µs)
35
TOSC (μs)
30
TOSCmax (µs)
25
20
TOSCmin (µs)
15
10
5
0
10
20
30
40
50
60
70
80
90
100
RWD (kΩ)
The tolerance of TOSC is ±10% for resistors RWD with maximum ±1% in tolerance.
3.5
Charge Pump
A charge pump has been implemented in order to provide sufficient voltage to operate the external high-side power-NMOS
transistors and the VG regulator, which drives the low-side Power-NMOS transistors. The charge pump output voltage at
CPOUT pin is controlled to settle typically about 15V above the voltage at pin PBAT. A built-in supervisor circuit checks if the
output voltage is sufficient to operate the VG regulator and external Power-NMOS transistors. The output voltage is
accepted as good when it rises above VCPCPGOOD. A charge pump failure is flagged at DG2 if this minimum can not be
reached or if the output voltage drops below the lower threshold of VCPCPGOOD due to overloading.
The two shuffle capacitors should have the same value. The value of the reservoir capacitor should be at least twice the
value of one shuffle capacitor. Two external shuffle capacitors and an external reservoir capacitor have to be provided. The
typical value for the two shuffle capacitors is 100nF, and for the reservoir capacitor is 1.5µF. All capacitors should be
ceramic. The greater the capacitors are, the greater the output current capability.
3.6
VG Regulator
The VG regulator provides a stable voltage to supply the low-side gate drivers and to deliver sufficient voltage for the
external low-side Power-NMOS transistors. Typically the output voltage is 12V. In order to guarantee reliable operation even
with a low battery voltage, the VG regulator is supplied by the charge pump output. For stability, an external ceramic
capacitor of typically 470nF has to be provided. There is no internal supervision of the VG output voltage.
3.7
Output Drivers and Control Inputs IL1-IL3, /IH1-/IH3 and /COAST
This IC offers six push-pull output drivers for the external low-side and high-side power-NMOS transistors. To guarantee
reliable operation, the low-side drivers are supplied by the VG regulator while the high-side drivers are supplied directly by
the charge pump. All drivers are designed to operate at switching frequencies in the range of DC up to 50kHz. The maximum
gate charge that can be delivered to each external Power-NMOS transistor at 50kHz is 100nC.
The output drivers L1 to L3 and H1 to H3 are directly controlled by the digital input pins IL1 to IL3 and /IH1 to /IH3 (see Table
3-1 on page 11). IL1 to IL3 are high active digital inputs equipped with an internal pull-down resistor, while /IH1 to /IH3 are
low active digital inputs equipped with an internal pull-up resistor.
The pin /COAST is a low active input with internal pull-up resistor, which forces low all output drivers L1-L3 and H1-H3, and
turns off all external FETs. As a safety function, /COAST allows to emergency switch off all output drivers to coast a BLDC
motor.
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ATA6843/ATA6844 [DATASHEET]
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To operate the output drivers properly the following requirements have to be fulfilled:
1.
Device is in Active Mode.
2.
In case of watchdog is enabled, at least one valid watchdog trigger has been accepted.
3.
The voltage at pin PBAT lies within its operation range. Neither undervoltage nor overvoltage is present.
4.
The charge pump output voltage has been accepted as good, thus it exceeded VCPCPGOOD.
5.
No overtemperature shutdown has occurred.
6.
/COAST is high
If a short circuit is detected by one of the sense inputs S1 to S3, the output drivers will be switched off after a blanking time
tSC of typically 6 µs and the output DG1 will be flagged (see also Section 3.8 “Short Circuit Detection and Short Circuit
Comparator Reference Input” on page 11). The output drivers will be enabled again and DG1 will be cleared with a rising
edge at one of the control inputs IL1 to IL3, or falling edge at one of the control inputs /IH1 to /IH3.
Additional logic prevents short circuits due to switching on one power-NMOS transistor while the opposite one in the same
branch is switched on already.
Table 3-1.
3.8
Status of the Output Drivers Depending on the Control Inputs
/COAST
Driver Stage for External
Power MOS
L(1..3), H(1..3)
Comments
X
X
OFF
Sleep Mode
X
X
0
OFF
Coast function active
0
1
1
OFF
Active
1
1
1
L(1..3) ON, H(1..3) OFF
Active
0
0
1
L(1..3) OFF, H(1..3) ON
Active
1
0
1
OFF
Mode
Control Inputs
IL(1..3)
Control Inputs
/IH(1..3)
Sleep
X
Active
Active
Shoot-through
protection
Short Circuit Detection and Short Circuit Comparator Reference Input
Short circuits in the motor bridge circuitry are sensed by S1 to S3 inputs. Internal comparators monitor the voltage
differences between the drain and the source terminals of the external power-NMOS transistors and compare it to voltage
VSCREF applied at pin SCREF. If one transistor switches on and its drain-source voltage exceeds VSCREF threshold after a
blanking time tSC (see Figure 3-8 on page 12), a short circuit in this branch will be detected. In this case, the short-circuit
detected output will be switched off immediately and pin DG1 will be set to HIGH. With a rising edge at any of the pins IL1 to
IL3 or a falling edge at any of the pins /IH1 to /IH3, the diagnostic output DG1will be reset and the drivers switched on again.
Note, valid voltage range for short-circuit reference is 0.5V ≤ VSCREF ≤ 3.3V. Voltages outside this range will lead to incorrect
short circuit thresholds. If pin SCREF is floating VSCREF will be set to approximately 2.5V by an integrated resistive voltage
divider.
3.9
Cross Conduction Timer
In order to prevent damage of the motor bridge due to peak currents a non-overlapping phase for switching the powerNMOS transistors is mandatory. Therefore, a cross conduction timer has been implemented to prevent switching on any
output driver for a time tCC after any other driver has been switched off. This also accounts for toggling any other driver after
a short circuit was detected. An external RC parallel combination defines the value for tCC and can be estimated as follows:
tCC = KCC × RCC (kΩ) × CCC (nF), KCC is specified in Section 8. “Electrical Characteristics” on page 16.
The RC combination is connected between CC and GND pins. When one of the drivers has been switched off the RC
combination is charged to 5V (VINT) and discharged with its time constant. Any low to high transition at IL1 to IL3 or any high
to low transition at /IH1 to IH3 will be masked out at the driver outputs until the voltage at CC pin drops below 67% of its initial
value (VINT). The timer will be re-triggered at any time by any falling edge at the control inputs. This is shown in the following
figure.
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Figure 3-8. Interaction of Short Circuit Detection and Cross Conduction Timer
IL1
L1
Ignore VS1
Shut off
for tSC = 6µs
if VS1 > 4V
/IH1
H1
Shut off
IL3
Ignore VPBAT - VS1
if VPBAT - VS1 > 4V
for tSC = 6µs
L3
VCC = VVINT
Ignore VS3
Shut off
for tSC = 6µs
if VS3 > 4V
CC
VCC = 67% VVINT
tcc
tcc
tcc
At least 5kΩ minimum and 5nF at maximum should be used as values for the RC combination. 10kΩ is recommended. If the
non-overlapping phase is controlled by the external microcontroller, it is possible to do without the external capacitor. The
minimum time tCC is defined by the parasitic capacitance at CC pin.
3.10
Diagnostic Outputs DG1 - DG3
As mentioned in the sections above, the diagnostic outputs DG1 to DG3 are used to signal failures. This is summarized in
the following table.
Note:
This is only valid for VCC > VtHRESHLow. Otherwise all diagnostic outputs will be tristated.
Table 3-2.
Status of the Diagnostic Outputs (Normal Operation)
Device Status
Diagnostic Outputs
CPOK
OT1
OV
UV
SC
DG1
DG2
DG3
Comments
0
X
X
X
X
–
1
–
Charge pump failure
X
1
X
X
X
–
–
1
Overtemperature prewarning
X
X
1
X
X
–
1
–
Overvoltage
X
X
X
1
X
–
1
–
Undervoltage
X
X
X
1
X represents: no effect)
OT1: overtemperature warning
OV: overvoltage of PBAT
UV: undervoltage of PBAT
SC: short circuit
CPOK: charge pump OK
1
–
–
Short circuit
X
Note:
In order to differentiate between LIN and EN wake-up, DG1 output will be set to LOW or HIGH respectively. LOW indicates
wake-up by LIN, HIGH indicates wake-up by EN. DG1 output will be cleared by the first valid watchdog trigger after wake-up
or by the first rising edge at IL1 to IL3 if the watchdog is disabled or by the first falling edge at /IH1 to /IH3if the watchdog is
disabled.
12
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
Table 3-3.
Indicating Wake-up Source
Diagnostic Outputs
3.11
DG1
DG2
DG3
Wake-up Source
1
–
–
EN
0
–
–
LIN
LIN Transceiver
Atmel® ATA6843 and Atmel ATA6844 include a fully integrated LIN transceiver complying with LIN specification 2.1 and
SAEJ2602 2. The transceiver consists of a low-side driver with slew rate control, wave shaping, current limiting, and a high
voltage comparator followed by a debouncing unit in the receiver.
During transmission, the data applied at pin TXD will be transferred to the bus driver to generate a bus signal on LIN pin.
TXD input has an internal pull-up resistor.
To minimize the electromagnetic emission of the bus line, the bus driver has a built-in slew rate control and wave-shaping
unit. The transmission will be aborted by a thermal shutdown or by a transition to Sleep Mode.
Figure 3-9. Definition of Bus Timing Parameters
tBit
tBit
tBit
TXD
(Input to transmitting node)
tBus_dom(max)
tBus_rec(min)
Thresholds of
THRec(max)
VS
(Transceiver supply
of transmitting node)
receiving node1
THDom(max)
LIN Bus Signal
Thresholds of
receiving node2
THRec(min)
THDom(min)
tBus_dom(min)
tBus_rec(max)
RXD
(Output of receiving node1)
trx_pdf(1)
trx_pdr(1)
RXD
(Output of receiving node2)
trx_pdr(2)
trx_pdf(2)
The recessive BUS level is generated from the integrated 30kΩ pull-up resistor in series with an active diode. This diode
protects against reverse currents on the bus line in case of a voltage difference between the bus line and VSUP
(VBUS > VSUP). No additional termination resistor is necessary to use the IC as a LIN slave. If this IC is used as a LIN master,
the LIN pin is terminated by an external 1 kΩ resistor in series with a diode to VBAT.
As PWM communication directly over the LIN transceiver in both directions is possible, there is no TXD timeout feature
implemented in the LIN transceiver.
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
13
4.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
All voltages are referenced to pin GND. (xxx) Values for the Atmel® ATA6844.
Parameters
Pin
Symbol
Min.
Max.
Unit
Input voltage
PGND
VPGND
–0.3
+0.3
V
Negative input current
VBAT
IVBAT
–15
mA
Negative input current
PBAT
IPBAT
–20
mA
Supply voltage
VBAT
VVBAT
+40
V
Supply voltage
PBAT
VPBAT
+40
V
/RESET, DG1,
DG2, DG3, RXD
V/RESET, VDG1, VDG2,
VDG3, VRXD
–0.3
VVCC + 0.3
V
IL1-3, /IH1-3, WD,
WDD, SLEEP, TXD
VIL1-3, V/IH1-3, VWD,
VSLEEP, VTXD
–0.3
VVCC + 0.3
V
Logic output voltage
Logic input voltage
Output voltage
VINT, VCC
VINT, VVVCC
–0.3
+5.5
V
Analog input voltage
RWD, CC, SCREF
VRWD , VCC, VSCREF
–0.3
VVCC + 0.3
V
Digital input voltage
EN
VEN
–0.3
VVBAT + 0.3
V
Digital input voltage
VMODE
VVMODE
–0.3
VVINT + 0.3
V
Output voltage
VG
VVG
+16
V
Input voltage
LIN
VVLIN
–27
VVBAT + 2
V
Output voltage
S1, S2, S3
VS1, VS2, VS3
(–6)
+40
V
Output voltage
L1, L2, L3
VL1, VL2, VL3
VPGND – 0.3
VVG + 0.3
V
Output voltage
H1, H2, L3
VH1, VH2, VH3
VS1, 2, 3 – 1
VS1, 2, 3 + 16
V
Charge pump
CPLO1, 2
VCPLO1, VCPLO2
VPBAT + 0.3
V
Charge pump
CPHI1, 2
VCPHI1, VCPHI2
VCPOUT + 0.3
V
Output voltage
CPOUT
VCPOUT
+52
V
TStorage
–55
+150
°C
CPLOx, CPHIx,
VG, CPOUT, Sx
ICPLOx_R, ICPHIx_R,
IVG_R, ICPOUT_R, ISx_R
–2
mA
–1
mA
Storage temperature
Reverse current
Lx, Hx
Estimated values take TJ > 150°C into account.
Note:
5.
ILx_R, IHx_R
Thermal Resistance
Parameters
Symbol
Value
Unit
Thermal resistance junction to heat slug
Rthjc
<5
K/W
Thermal resistance junction to ambient when heat slug
is soldered to PCB
Rthja
25
K/W
14
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
6.
Operating Range
The operating conditions define the limits for functional operation and parametric characteristics of the device. Functionality outside
these limits is not implied unless otherwise stated explicitly. (xxx) Values for the Atmel® ATA6844
Parameters
Symbol
Min
Max
Unit
Operating supply voltage(1)
VVBAT
5.5
VTHOV
V
(2)
VVBAT
4.3
5.5
V
(3)
VVBAT
VTHOV
40
V
Ambient temperature range
TA
–40
+150
°C
Junction temperature range
Notes: 1. Full functionality
TJ
–40
+150 (200)
°C
Operating supply voltage
Operating supply voltage
7.
2.
Output drivers are switched off, extended range for parameters for voltage regulators
3.
Output drivers and charge pump are switched off
Noise and Surge Immunity, ESD and Latch-up
Parameters
Standard and Test Conditions
Value
Conducted interferences
ISO 7637-1
Conducted disturbances
CISP25
ESD according to IBEE LIN EMC
- Pins LIN, PBAT, VBAT
- Pin EN (33kΩ serial resistor)
Test specification 1.0 following IEC 61000-4-2
Level 4(1)
Level 5
±6kV
±5kV
ESD HBM with 1.5kΩ/100pF
ESD- STM5.1-2001
JESD22-A114E 2007
CEI/IEC 60749-26: 2006
AEC-Q100-002-Ref_D
±2kV
ESD HBM with 1.5kΩ/100pF
Pins EN, LIN, PBAT, VBAT against GND
ESD- STM5.1-2001
JESD22-A114E 2007
CEI/IEC 60749-26: 2006
AEC-Q100-002-Ref_D
±8kV
ESD CDM (field induced method)
Note:
1. Test pulse 5: Vbat max = 40V
ESD STM5.3.1 - 1999
±500V
Static latch-up tested according to AEC-Q100-004 and JESD78.
● 3 to 6 samples, 0 failures
●
Electrical post-stress testing at room temperature
In test, the voltage at the pins VBAT, LIN, CP, VBATSW, Hx, and Sx must not exceed 45V when not able to drive the
specified current.
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
15
8.
Electrical Characteristics
All parameters given are valid for 5.5V ≤ VVBAT ≤ VTHOVLO and for –40°C ≤ TJ ≤ 150°C (200°C) unless stated otherwise. All values refer
to PIN GND. (xxx) Values for the Atmel® ATA6844.
No. Parameters
1
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit Type*
Power Supply and Supervisor Functions
1.1
Current consumption
VVBAT
VVBAT = 13.5V(1)
46
IVBAT
7
mA
A
1.3
Current consumption
VVBAT in Standby Mode
VVBAT = 13.5V
46
IVBAT
65
µA
A
1.4
Current consumption
VPBAT in Standby Mode
VPBAT = 13.5V
38
IVPBAT
9.0
20.0
µA
A
VVBAT > 7V
5.3
V
A
1.5 Internal power supply
2
VVINT
4.7
Overvoltage lock-out
1.6
threshold
5.0
38
VTHOVLO
32.0
34.0
V
A
1.7 Overvoltage hysteresis
38
VTOVhys
1.5
2.5
V
A
1.8
Undervoltage lock-out
threshold
38
VTHUVRC
4.75
5.25
V
A
1.9
Undervoltage threshold
hysteresis
38
VTUVhys
0.2
0.4
V
A
TJPW set
120
(170)
145
(195)
170
(220)
°C
B
1.12 Thermal prewarning reset
TJPW reset
105
(155)
130
(180)
155
(205)
°C
B
Thermal prewarning
hysteresis
ΔTJPW
°C
B
1.11 Thermal prewarning set
1.13
15
1.14 Thermal shutdown off
TJ switch off
150
(200)
175
(225)
200
(250)
°C
B
1.15 Thermal shutdown on
TJ switch on
135
(185)
160
(210)
185
(235)
°C
B
°C
B
1.16
Thermal shutdown
hysteresis
ΔTJ switch off
1.17
Ratio thermal shutdown
off/thermal prewarning set
TJ switch off/
TJPW set
1.05
1.15
B
TJ switch on/
TJPW reset
1.05
1.15
B
Ratio thermal shutdown
1.18 on/thermal prewarning
reset
2
15
5V/3.3V Regulator
2.1 Regulated output voltage
VMODE = VINT, 7V < VBAT < 40V
VMODE = GND, 5.5V < VBAT < 40V
ILoad = 0 to 100mA
2.2 Regulated output voltage
VMODE = VINT, 7V < VBAT < 40V
VMODE = GND, 5.5V < VBAT < 40V
ILoad = 0 to 80mA
150°C < TJ < 200°C
44
VVCC
2.3 Regulated output voltage
VMODE = VINT, 5.5V < VBAT < 7V
VMODE = GND, 5V < VBAT < 5.5V
ILoad = 0 to 60mA
44
VVCC
44
VVCC
4.85
3.20
5.15
3.40
4.85
3.20
5.15
3.40
4.50
2.97
5.15
3.40
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
16
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
V
A
V
A
V
A
8.
Electrical Characteristics (Continued)
All parameters given are valid for 5.5V ≤ VVBAT ≤ VTHOVLO and for –40°C ≤ TJ ≤ 150°C (200°C) unless stated otherwise. All values refer
to PIN GND. (xxx) Values for the Atmel® ATA6844.
No. Parameters
Test Conditions
Pin
2.4 Regulated output voltage
VMODE = VINT, 5.5V < VBAT < 7V
VMODE = GND, 5V < VBAT < 5.5V
ILoad = 0 to 50mA
150°C < TJ < 200°C
44
2.5 Line regulation
VMODE = VINT, 7V < VBAT < 40V
VMODE = GND, 5.5V < VBAT < 40V
ILoad = 50mA, –40°C < TJ < 150°C
44
2.6 Load regulation
VMODE = VINT, VBAT > 7V
VMODE = GND, VBAT > 5.5V
ILoad = 0 to 100mA
ILoad = 0 to 80mA,
150°C < TJ < 200°C
44
2.7 Output current limit
VMODE = VINT, VBAT > 7V
VMODE = GND, VBAT > 5.5V
ILoad at RESET
44
2.8 Output current limit
VMODE = VINT, VBAT > 7V
VMODE = GND, VBAT > 5.5V
ILoad at RESET,
150°C < TJ < 200°C
Symbol
VVCC
Min.
Typ.
4.50
2.97
Max.
5.15
3.40
50
50
Unit Type*
V
A
mV
A
mV
A
mA
A
mA
C
V
A
V
A
50
50
IOS1
100
100
360
360
70
70
360
360
44
IOS1
2.12 HIGH threshold VMODE
1
VVMODE H
2.13 LOW threshold VMODE
1
VVMODE L
0.7
VCC threshold voltage level VMODE = VINT
for /RESET
(VMODE = GND)
5
VtHRESHLow
3.8
2.5
4.2
2.8
V
A
B
VMODE = VINT
(VMODE = GND)
5
HYSRESth
0.2
0.13
0.6
0.4
V
A
B
5
tres
8
12
ms
A
5
tresshort
1.6
2.4
ms
A
3.5 Wait for the first WD trigger
5
td
400
600
ms
A
Time for VCC < VtHRESL
3.6
before activating /RESET
5
tdelayRESL
2
µs
C
3.8 Watchdog oscillator period RRWD = 33kΩ ±1%
(5)
TOSC
13.55
µs
A
3.12 Close window
(5)
t1
980 ×
TOSC
A
3.13 Open window
(5)
t2
780 ×
TOSC
A
5
VOLRES
5
RPURES
3
3.1
Reset and Watchdog
3.2 Hysteresis
3.3 Length of pulse at /RESET
3.4
4.0
Length of short pulse at
/RESET
3.14
Output low-level at pin
/RESET
3.15
Internal pull-up resistor at
pin /RESET
IOLRES = 1mA
11.09
5
10
0.4
V
A
15
kΩ
D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
17
8.
Electrical Characteristics (Continued)
All parameters given are valid for 5.5V ≤ VVBAT ≤ VTHOVLO and for –40°C ≤ TJ ≤ 150°C (200°C) unless stated otherwise. All values refer
to PIN GND. (xxx) Values for the Atmel® ATA6844.
No. Parameters
Test Conditions
Pin
Symbol
Min.
4.1 Low-level output current
Normal mode;
VLIN = 0V, VRXD = 0.4V
22
ILRXD
2
4.2 High-level output current
Normal mode; VLIN = VBAT
VRXD = VCC – 0.4V
22
IHRXD
4
Typ.
Max.
Unit Type*
LIN Transceiver
–2
0.9 ×
VBAT
mA
D
mA
D
V
A
4.3
Driver recessive output
voltage
VTXD = VCC; ILIN = 0mA
13
VBUSrec
4.4
Driver dominant voltage
VBUSdom_DRV_LoSUP
VVBAT = 7.3V
Rload = 500Ω
13
V_LoSUP
1.2
V
A
4.5
Driver dominant voltage
VBUSdom_DRV_HiSUP
VVBAT = 18V
Rload = 500Ω
13
V_HiSUP
2
V
A
4.6
Driver dominant voltage
VBUSdom_DRV_LoSUP
VVBAT = 7.3V
Rload = 1000Ω
13
V_LoSUP_1k
0.6
V
A
4.7
Driver dominant voltage
VBUSdom_DRV_HiSUP
VVBAT = 18V
Rload = 1000Ω
13
V_HiSUP_1k_
0.8
V
A
4.8 Pull up resistor to VS
Serial diode required
13
RLIN
20
47
kΩ
A
4.9 Current limitation
VBUS = VBAT_max
13
IBUS_LIM
50
200
mA
A
13
IBUS_PAS_dom
–1
mA
A
Driver off
8V < VBAT < 18V
8V < VBUS < 18V
VBUS = VBAT
13
IBUS_PAS_rec
20
µA
A
Leakage current at ground
loss
Control unit disconnected GNDDevice = VS
4.12 from ground
VBAT = 12V
Loss of local ground must 0V < VBUS < 18V
not affect communication
in the residual network
13
IBUS_NO_gnd
+1
mA
A
Node has to sustain the
current that can flow under VBAT disconnected
4.13 this condition. Bus must
VSUP_Device = GND
remain operational under 0V < VBUS < 18V
this condition
13
IBUS
100
µA
A
VBUS_CNT =
(Vth_dom + Vth_rec)/2
13
VBUS_CNT
0.525 ×
VVBAT
V
A
4.15 Receiver dominant state
VEN = 5V
13
VBUSdom
0.4 ×
VVBAT
V
A
4.16 Receiver recessive state
VEN = 5V
13
VBUSrec
V
A
4.17 Receiver input hysteresis
VHYS = Vth_rec – Vth_dom
13
VBUShys
V
A
Input leakage current
Input leakage current at
driver off
4.10 the receiver including pullVBUS = 0V
up resistor as specified
VBAT = 12V
Leakage current LIN
4.11
recessive
4.14
Center of receiver
threshold
–1
0.475 ×
VVBAT
0.5 ×
VVBAT
0.6 ×
VVBAT
0.175 ×
VVBAT
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
18
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
8.
Electrical Characteristics (Continued)
All parameters given are valid for 5.5V ≤ VVBAT ≤ VTHOVLO and for –40°C ≤ TJ ≤ 150°C (200°C) unless stated otherwise. All values refer
to PIN GND. (xxx) Values for the Atmel® ATA6844.
No. Parameters
Test Conditions
Pin
Symbol
Min.
4.18 Duty cycle 1
7V < VVBAT < 18V
THrec(max) = 0.744 × VVBAT
THDom(max) = 0.581 × VVBAT
tBit = 50µs
D1 = tBus_rec(min)/(2 × tBit)
Load1: 1nF + 1kΩ
Load2: 10nF + 500Ω
13
D1
0.396
4.19 Duty cycle 2
7V < VVBAT < 18V
THrec(min) = 0.422 × VVBAT
THDom(min) = 0.284 × VVBAT
tBit = 50µs
D2 = tBus_rec(max)/(2×tBit)
Load1: 1nF + 1kΩ
Load2: 10nF + 500Ω
13
D2
4.20 Duty cycle 3
7V < VVBAT < 18V
THrec(max) = 0.778 × VVBAT
THDom(max) = 0.616 × VVBAT
tBit = 96µs
D3 = tBus_rec(min)/(2 × tBit)
Load1: 1nF + 1kΩ
Load2: 10nF + 500Ω
13
D3
4.21 Duty cycle 4
7V < VVBAT < 18V
THrec(max) = 0.389 × VVBAT
THDom(max) = 0.251 × VVBAT
tBit = 96µs
D4 = tBus_rec(min)/(2 × tBit)
Load1: 1nF + 1kΩ
Load2: 10nF + 500Ω
13
D4
0.590
7V < VVBAT < 18V
trec_pd = max(trx_pdr, trx_pdf)
22
trx_pd
6
µs
A
7V < VVBAT < 18V
trx_sym = trx_pdr – trx_pdf
22
trx_sym
–2
+2
µs
A
4.22
Receiver propagation
delay
Symmetry of receiver
4.23 propagation delay rising
edge minus falling edge
Typ.
Max.
Unit Type*
A
0.581
A
0.417
A
A
4.24
Dominant time for wake-up
VLIN = 0V
via LIN Bus
13
TBUS
30
90
150
µs
A
4.25
Monitoring time for wakeup over LIN Bus
13
Tmon
6
10
15
ms
B
4.26
Pre-wake detection LIN
Low-Level Input Voltage
13
VLINL
–27
VVBAT –
3.3
V
A
4.27
Pre-wake detection LIN
High-Level Input Voltage
13
VLINH
VVBAT –
2
VVBAT +
0.3
V
A
4.28
LIN Pre-Wake pull-up
current
13
ILINWake
–30
µA
A
4.29
Capacitance on LIN Pin to
GND
13
CLIN
pF
D
Switches the LIN receiver on
VVBAT < 27V
VLIN = 0V
–10
10
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
19
8.
Electrical Characteristics (Continued)
All parameters given are valid for 5.5V ≤ VVBAT ≤ VTHOVLO and for –40°C ≤ TJ ≤ 150°C (200°C) unless stated otherwise. All values refer
to PIN GND. (xxx) Values for the Atmel® ATA6844.
No. Parameters
Pin
Symbol
5.1 Input low-level threshold
6-8, 1521, 48
VIL
5.2 Input high-level threshold
6-8, 1521, 48
VIH
0.7 ×
VVCC
5.3 Hysteresis
6-8, 1521, 48
HYS
0.3
5
Test Conditions
Min.
Typ.
Max.
Unit Type*
Control Inputs WD, WDEN, SLEEP, TXD, IL1-3, /IH1-3, /COAST
0.3 ×
VVCC
V
A
V
A
C
5.4 Pull-down resistor
WD, SLEEP, IL1-3
6, 8, 16,
18, 20
RPD
25
50
100
kΩ
A
5.5 Pull-up resistor
WDEN, TXD, /IH1-3, /COAST
7, 15,
17, 19,
21, 48
RPU
25
50
100
kΩ
A
8
tgotosleep
9
10
11
µs
A
6.1 Charge pump voltage
VVBAT > 7V
ILoadCPOUT = 0A
ILoadVG = 0A
CCP1,2 = 47nF
CCPOUT = 220nF
32
VCPOUT
VVBAT
+ 11V
VVBAT
+ 18
V
A
6.2 Charge pump voltage
VVBAT > 7V
ILoadCPOUT = 7.5mA,
ILoadVG = 0A
CCP1,2 = 47nF
CCPOUT = 220nF
32
VCPOUT
VVBAT
+10V
V
A
µs
B
8.0
V
A
14
V
A
5.7 Debounce time SLEEP
6
Charge Pump
6.3
Period charge pump
oscillator
6.4
Charge pump output
voltage for active drivers
7
TCP
2.5
32
VCPCPGOOD
5.25
11
VG Regulator
7.1
VG Regulator Output
Voltage
VBAT = 13.5V
VCPOUT = 20V
ILoadVG = 7.5mA
39
VVG
7.2
VG Regulator Line
Regulation
VBAT = 13.5V
VCPOUT1 = 20V, VCPOUT2 = 35V
ILoadVG = 7.5mA
39
ΔVVG_Line
100
mV
A
7.3
VG Regulator Load
Regulation
VBAT = 13.5V
VCPOUT = 25V
ILoadVG1 = 1mA, ILoadVG2 = 60mA
39
ΔVVG_Load
100
mV
A
40-42
VLxH
VVG
V
D
8
12.5
H-bridge Driver
8.1
Low-side driver HIGH
output voltage
8.2
ON-resistance of sink
stage of pins Lx
ILX = 100mA
40-42
RDSON_LxL
20
Ω
A
8.3
ON-resistance of source
stage of pins Lx
ILX = 100mA
40-42
RDSON_LxH
20
Ω
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
20
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
8.
Electrical Characteristics (Continued)
All parameters given are valid for 5.5V ≤ VVBAT ≤ VTHOVLO and for –40°C ≤ TJ ≤ 150°C (200°C) unless stated otherwise. All values refer
to PIN GND. (xxx) Values for the Atmel® ATA6844.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit Type*
40-42 to
43
RLxsink
45
75
115
kΩ
A
8.6
Sink resistance between
Lx and GND
8.7
ON-resistance of sink
stage of pins Hx
VSx = 0V
26, 28,
30
RDSON_HxL
20
Ω
A
8.8
ON-resistance of source
stage of pins Hx
VSx = VVBAT
IHx = 100mA
26, 28,
30
RDSON_HxH
20
Ω
A
8.13
Output voltage low level
pins Hx
VSx = 0V
IHx = 1mA
26, 28,
30
VHxL
0.3
V
A
8.14
Output voltage high level
pins Hx
IHx = –100µA
26, 28,
30
VHxHstat
VVCPOUT
– 1V
VVCPOUT
V
A
8.15
Sink resistance between
Hx and Sx
26-31
RHxsink
45
115
kΩ
A
8.16
Sink resistance between
Sx and GND
27, 29,
31, 38
RSxsink
MΩ
D
Propagation delay time,
8.17 low-side driver from high to
low
40-42
tLxHL
0.9
µs
A
Propagation delay time,
8.18 low-side driver from low to
high
40-42
tLxLH
0.9
µs
A
75
1
Dynamic Parameters
8.19 Fall time low-side driver
VVBAT = 13.5V
CGx = 5nF
40-42
tLxf
0.3
µs
A
8.20 Rise time low-side driver
VVBAT = 13.5V
CGx = 5nF
40-42
tLxr
0.3
µs
A
Propagation delay time,
8.21 high-side driver from high
to low
26, 28,
30
tHxHL
0.9
µs
A
Propagation delay time,
8.22 high-side driver from low to
high
26, 28,
30
tHxLH
0.9
µs
A
8.23 Fall time high-side driver
VVBAT = 13.5V,
CGx = 5nF
26, 28,
30
tHxf
0.3
µs
A
8.24 Rise time high-side driver
VVBAT = 13.5V,
CGx = 5nF
26, 28,
30
tHxr
0.3
µs
A
9
VSCREF
0.5
3.3
V
A
9, 27,
29, 31
VSCREF
–10
+10
%
A
9
VSCREF_DEF
V
C
8.25
Valid Short circuit
detection voltage range
8.26
Accuracy Short circuit
detection voltage
8.27
Default Short Circuit
detection voltage
0.5V ≤≤ VSCREF ≤≤ 3.3V
2.5
8.28 Internal resistor to GND
9
RiGND
80
100
120
kΩ
A
8.29 Internal resistor to VBAT
9
RiVBAT
80
100
120
kΩ
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
21
8.
Electrical Characteristics (Continued)
All parameters given are valid for 5.5V ≤ VVBAT ≤ VTHOVLO and for –40°C ≤ TJ ≤ 150°C (200°C) unless stated otherwise. All values refer
to PIN GND. (xxx) Values for the Atmel® ATA6844.
No. Parameters
Test Conditions
Pin
8.30 Short circuit blanking time
Symbol
Min.
Typ.
Max.
tSC
5.4
6
6.6
KCC
0.345
0.405
0.465
Unit Type*
µs
A
Cross Conduction Timer
8.31
9
Cross conduction time
constant
B
Input EN
9.1 Input low level threshold
47
VIL
2.3
3.6
V
A
9.2 Input high level threshold
47
VIH
2.8
4.0
V
A
9.3 Hysteresis
47
HYS
V
C
9.4 Pull-down resistor
47
RPD
50
100
200
kΩ
A
9.5 Debounce time
47
tdb
10
20
25
µs
A
2
mA
A
mA
A
10
0.47
Diagnostic Outputs DG1, DG2, DG3
10.1 Low level output current
VDG = 0.4V
23-25
IL
10.2 High level output current
VDG = VCC – 0.4V
23-25
IH
–2
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
22
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
9.
Application
This section describes the principal application for which the Atmel® ATA6843/ATA6844 was designed.
Figure 9-1. Typical Application
Battery
+
CCPOUT
CCP1
CPBAT
PBAT
CPOUT
CPHI2
CPLO2
CCP2
CPHI1
CPLO1
CVG
VG
VMODE
VBAT
VINT
CVINT
CVBAT
CVCC
VCC
VCC
Regulator
VG
Regulator
Charge Pump
/RESET
WD
VINT
Regulator
/IH1-3
DG1
DG2
WDEN
GND
SCREF
EN
LINGND
LIN
DAC
WD
Timer
LIN
RWD
ADC
High-side
Driver 2
H2
High-side
Driver 1
H1
S1
S3
CC
Timer
RCC
Low-side
Driver 1
L1
Low-side
Driver 2
L2
Low-side
Driver 3
L3
PGND
RX
TX
Driver
Control
Atmel ATA6843/44
DG3
H3
S2
Supervisor:
Short Circuit
Overtemperature
Undervoltage
COAST
Oscillator
CC
SLEEP
Control
Logic
RWD
Microcontroller
IL1-3
VBG
High-side
Driver 3
CCC
VCC
Hall C
Hall B
Hall A
LIN
KL 15
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
23
Table 9-1.
Typical External Components
Component
Min.
Typical
Max.
CVINT
Blocking capacitor at VINT
100nF
220nF/10V
470nF
CVCC
Blocking capacitor at VCC
1.5µF
10µF
1nH
20nH
ESL (CVCC)
Serial inductance to CVCC including PCB
ESR (CVCC)
Serial resistance to CVCC including PCB
2Ω
15Ω
CVG
Blocking capacitor at VG
220nF
470nF, 25V
1µF
CCP1
Charge pump shuffle capacitor
47nF
100nF/25V
220nF
CCP2
Charge pump shuffle capacitor
47nF
100nF/25V
220nF
Charge pump reservoir capacitor
470nF
15 × CCPx/25V
3.3µF
Resistor defining internal bias currents for
watchdog oscillator
10kΩ
33 kΩ
91kΩ
RCC
Cross conduction time definition resistor
5kΩ
10kΩ
CCPOUT
RRWD
24
Function
CCC
Cross conduction time definition capacitor
330pF
CVBAT
Blocking capacitor VBAT
100nF
CPBAT
Blocking capacitor PBAT
100nF
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
5nF
10.
Ordering Information
Extended Type Number
Package
Remarks
ATA6843-PLQW
QFN48
-
ATA6844-PLQW
QFN48
-
Package Information
Top View
48
1
E
PIN 1 ID
12
technical drawings
according to DIN
specifications
D
Dimensions in mm
Standard Singulation process
A1
A3
A
Side View
Bottom View
D2
13
24
12
25
COMMON DIMENSIONS
(Unit of Measure = mm)
1
Z
36
37
48
e
Z 10:1
L
11.
Symbol
MIN
NOM
MAX
A
0.8
0.9
1
A1
A3
0.0
0.15
0.02
0.2
0.05
0.25
D
6.9
7
7.1
D2
4.35
4.5
4.65
E
6.9
7
7.1
E2
4.35
4.5
4.65
L
0.3
0.4
0.5
b
e
0.16
0.23
0.5 BSC
0.3
NOTE
b
09/07/11
TITLE
Package Drawing Contact:
[email protected]
Package: VQFN_7x7_48L
Exposed pad 4.5x4.5
GPC
DRAWING NO.
REV.
6.543-5137.01-4
2
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
25
12.
Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
Revision No.
History
9189J-AUTO-05/14
• Section 8 “Electrical Characteristics” numbers 8.4 and 8.5 on page 20 removed
9189I-AUTO-03/14
• Section 3.8 “Short Circuit Detection and Short Comparator Reference Input” on page 11
updated
• Section 4 “Absolute Maximum Ratings” on page 14 updated
• Section 8 “Electrical Characteristics” numbers 8.9 to 8.12 on page 21 removed
9189H-AUTO-07/12
• Figure 3-1 “Wake-up Using the LIN Interface” on page 6 updated
• Section 11 “Package Information” on page 25 updated
9189G-AUTO-03/12
• Section 4 “Absolute Maximum Ratings” on page 14 changed
9189F-AUTO-10/11
• Section 8 “Electrical Characteristics” numbers 8.1, 8.4, 8.7, 8.9, 8.10, 8.11, 812, 8.17,
8.19, 8.21 and 8.26 on pages 23 to 25 changed
• Example test changed and text under figure 3-5 on page 11 added
• Section 8 “Electrical Characteristics” number 3.8 on page 20 changed
9189E-AUTO-08/11
• Section 8 “Electrical Characteristics” number 8.31 on page 25 changed
• Figure 9-1 “Typical Application” on page 26 changed
• Table 9-1 “Typical External Components” on page 27 changed
• Features on page 1 changed
9189D-AUTO-03/11
• Section 8 “Electrical Characteristics” number 1.6 on page 19 changed
• Section 8 “Electrical Characteristics” numbers 8.10 and 8.12 on page 24 changed
9189C-AUTO-01/11
9189B-AUTO-10/10
26
• Section 8 “Electrical Characteristics” numbers 8.28 and 8.29 on page 25 added
• Section 4 “Absolute Maximum Ratings” on page 17 changed
• Section 8 “Electrical Characteristics” numbers 8.23 and 8.24 on page 25 changed.
ATA6843/ATA6844 [DATASHEET]
9189J–AUTO–05/14
XXXXXX
Atmel Corporation
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T: (+1)(408) 441.0311
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|
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© 2014 Atmel Corporation. / Rev.: Rev.: 9189J–AUTO–05/14
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