AP4034GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
30V
RDS(ON)
9mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
41A
S
Description
AP4034 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
41
A
ID@TC=100℃
Drain Current, VGS @ 10V
26
A
120
A
25
W
2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
3
Value
Units
5
℃/W
62.5
℃/W
1
201501292
AP4034GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance2
Test Conditions
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=24A
-
-
9
mΩ
VGS=4.5V, ID=20A
-
-
13.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
26
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=20A
-
16.5
26.4
nC
Qgs
Gate-Source Charge
VDS=24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
9
-
ns
tr
Rise Time
ID=20A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
25
-
ns
tf
Fall Time
VGS=10V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1620 2600
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
140
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
2.4
Ω
Min.
Typ.
IS=24A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
14
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
5
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4034GH-HF
120
100
80
10V
7.0V
6.0V
5.0V
V G =4.0V
80
ID , Drain Current (A)
100
ID , Drain Current (A)
T C =150 o C
10V
7.0V
6.0V
5.0V
V G = 4.0V
T C =25 o C
60
40
60
40
20
20
0
0
0
2
4
6
8
10
12
0
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
10
Fig 2. Typical Output Characteristics
12
2.0
I D =20A
I D =24A
V G =10V
T C =25 o C
Normalized RDS(ON)
11
RDS(ON) (mΩ )
4
V DS , Drain-to-Source Voltage (V)
10
9
1.6
1.2
+20
8
0.8
7
0.4
6
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
I D =250uA
16
12
o
Normalized VGS(th)
IS(A)
1.2
T j =25 o C
T j =150 C
8
0.8
0.4
4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4034GH-HF
f=1.0MHz
2000
I D =20A
V DS =24V
C iss
1600
6
C (pF)
VGS , Gate to Source Voltage (V)
8
4
1200
800
2
400
C oss
C rss
0
0
0
8
16
24
1
32
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thjc)
1000
100
Operation in this
area limited by
RDS(ON)
ID (A)
13
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100us
10
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Duty factor = 0.5
0.2
0.1
0.1
+20
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
0.1
1
10
0.00001
100
0.0001
0.001
0.01
0.1
1
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
60
V DS =5V
50
ID , Drain Current (A)
ID , Drain Current (A)
50
40
30
20
o
T j =150 C
40
30
20
o
T j =25 C
10
10
o
T j = -40 C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
o
T C , Case Temperature ( C )
Fig 12. Drain Current v.s. Case Temperature
4
AP4034GH-HF
MARKING INFORMATION
4034GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5