PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● Short Circuit Rated UltraFast IGBT C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package VCES = 600V VCE(on) typ. = 1.84V G @VGE = 15V, IC = 30A E n -c h a n n e l Benefits ● ● ● Generation 4 IGBTs offer highest efficiencies available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 52 30 104 104 25 280 10 ± 20 200 78 -55 to +150 V A µs V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RqJC RqJC RqCS RqJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. — — — — — — — 0.24 — 6 (0.21) 0.64 0.83 — 40 — Units °C/W g (oz) 1 12/3/98 IRG4PC50KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage ➂ Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) DVGE(th)/DTJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance ➃ Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES DV(BR)CES/DTJ Min. 600 — — — — 3.0 — 17 — — — — — Typ. — 0.47 1.84 2.19 1.79 — -12 24 — — 1.3 1.2 — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 2.2 IC = 30A VGE = 15V — V IC = 52A see figures 2, 5 — IC = 25A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C V CE = VGE, IC = 250µA — S VCE = 100V, IC = 30A 250 µA VGE = 0V, VCE = 600V 6500 VGE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 25A see figure 13 1.5 IC = 25A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — 10 Typ. 200 25 85 63 49 150 95 1.61 0.84 2.45 — — — — — — — — — — — — — — — — — — 61 46 310 170 3.53 13 3200 370 95 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 300 IC = 30A 38 nC VCC = 400V see figure 8 127 VGE = 15V — — TJ = 25°C ns 220 IC = 30A, VCC = 480V 140 VGE = 15V, RG = 5.0W — Energy losses include "tail" — mJ and diode reverse recovery 3.0see figures 9,10,18 — µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10W , VCPK < 500V — TJ = 150°C, see figures 11,18 — IC = 30A, VCC = 480V ns — VGE = 15V, RG = 5.0W — Energy losses include "tail" — mJ and diode reverse recovery — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V see figure 7 — ƒ = 1.0MHz 75 ns TJ = 25°C see figure 160 TJ = 125°C 14 IF = 25A 10 A TJ = 25°C see figure 15 TJ = 125°C 15 VR = 200V 375 nC TJ = 25°C see figure 1200 TJ = 125°C 16 di/dt 200A/µs — A/µs TJ = 25°C see figure — TJ = 125°C 17 www.irf.com IRG4PC50KD 35 F or b oth: LOAD CURRENT (A) 30 D uty c y c le : 50% T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ified 25 P ow er D is s ipation = 40 W S q u a re w a v e : 20 60% of rated voltage 15 I 10 Id e a l d io d es 5 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 TJ = 25 ° C 100 150°C TJ = 150 ° C 10 V GE = 15V 20µs PULSE WIDTH 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 100 TJ = 150 °C 10 TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 11 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC50KD 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 60 50 40 30 20 10 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 60 A 2.0 IC = 30 A IC = 15 A 1.0 -60 -40 -20 TC , Case Temperature (° C) Fig. 4 - Maximum Collector Current vs. Case Temperature 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 0.00001 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50KD VGE = Cies = Cres = Coes = C, Capacitance (pF) 4000 0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc Cies 3000 2000 1000 Coes 20 VGE , Gate-to-Emitter Voltage (V) 5000 16 12 8 4 Cres 0 1 0 10 0 100 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 100 V CC = 480V V GE = 15V TJ = 25 ° C 4.0 I C = 30A 3.5 3.0 2.5 2.0 20 30 GResistance (W) (O RG, Gate 40 80 120 160 50 W RG =5.0 Ohm VGE = 15V VCC = 480V IC = 60 A 10 IC = 30 A IC = 15 A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 ) TJ , Junction Temperature (° C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 4.5 10 40 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) 0 VCC = 400V I C = 30A 5 IRG4PC50KD RG TJ VCC 10 VGE 1000 W = 5.0 Ohm = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 12 8 6 VGE = 20V T J = 125 o C 100 4 2 SAFE OPERATING AREA 0 0 10 20 30 40 50 60 10 70 1 I C , Collector-to-emitter Current (A) 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 140 V R = 200V T J = 125°C T J = 25°C 120 TJ = 150 °C TJ = 125 °C 10 100 TJ = 25 °C t rr - (ns) In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 100 80 I F = 50A I F = 25A 60 IF = 10A 40 1 0.6 1.0 1.4 1.8 2.2 2.6 F o rw a rd V o lta g e D ro p - V FM (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 20 100 di f /dt - (A/µs) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt www.irf.com IRG4PC50KD 1500 100 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C I F = 5 0A Q R R - (n C ) I IR R M - (A ) 1200 I F = 25A 10 I F = 10A 900 I F = 50A 600 I F = 2 5A 300 I F = 10A 1 100 0 100 1000 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 d i f /d t - (A /µ s) d i f /d t - (A /µ s) Fig. 16 - Typical Stored Charge vs. dif/dt 10000 d i(re c)M /d t - (A /µ s) VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 1000 I F = 10A I F = 25A I F = 50A Mechanical drawings, Appendix A Test Circuit diagrams, Appendix B Switching Loss Waveforms, Appendix C www.irf.com 100 100 1000 d i f /d t - (A /µ s) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC50KD Same type device as D .U.T. 90% 430µF 80% of Vce 10% Vge D .U .T. VC 90% t d(off) 10% IC 5% tf tr Fig. 18a - Test Circuit for Measurement of t d(on) t=5µs Eon ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff E ts = (Eon +Eoff ) Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g trr Q rr = Ic trr id Ic dtdt tx ∫ +V g tx 10% V c c 10% Irr Vcc D U T V O LT A G E AND CURRENT Vce V pk Irr Vcc 10% Ic Ipk 90% Ic Ic D IO D E R E C O V E R Y W AVEFORMS tr td(on) 5% V c e t1 ∫ t2 c e ieIc dt dt E on = VVce t1 t2 E rec = D IO D E R E V E R S E RECOVERY ENERG Y t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ Vd Ic dt t4 V d id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4PC50KD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 800V 4 X IC @25°C 0 - 800V 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4PC50KD Notes: Repetitive rating: VG E=20V; pulse width limited by maximum junction temperature (figure20) V C C=80%(VCES),VG E=20V, L=10µH, RG = 5.0W (figure 19) Pulse width £ 80µs; duty factor £ 0.1%. Pulse width 5.0µs, single shot. Case Outline TO-247AC 3.65 (.14 3) 3.55 (.14 0) 0.25 (.01 0) M D B M 15 .90 (.62 6) 15 .30 (.60 2) -B- -A5.50 (.217) 20 .30 (.80 0) 19 .70 (.77 5) 2X 1 2 -D- 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 5.50 (.217) 4.50 (.177) LE A D 1234- 3 -C- * 14 .80 (.583) 14 .20 (.559) 2.40 (.09 4) 2.00 (.07 9) 2X 5.45 (.21 5) 2X 4.3 0 (.1 70) 3.7 0 (.1 45) 3X 1.4 0 (.0 56) 1.0 0 (.0 39) 0.2 5 (.0 10) M 3.40 (.13 3) 3.00 (.11 8) NOTES: 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N T R O LLIN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 47A C . * 0.80 (.03 1) 0.40 (.01 6) 2.60 (.10 2) 2.20 (.08 7) A S S IG N M E N T S GATE C O LLE C T O R E M IT T E R C O LLE C T O R LO N G E R L E A D E D (20m m ) V E R S IO N A V A ILA B LE (T O -247 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER 3X C A S CONFORM S TO JEDEC OU TLINE TO-247AC (TO-3P) D im ensio ns in M illim ete rs a nd (In ch es) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 12/98 10 www.irf.com