CHENMKO ENTERPRISE CO.,LTD CHM41A2NPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 40 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) * High density cell design for extremely low RDS(ON). * Rugged and reliable. 0.420(10.67) 0.190(4.83) 0.380(9.69) 0.160(4.06) 0.245(6.22) 0.055(1.40) MIN. 0.045(1.14) * N-Channel Enhancement 0.320(8.13) 0.625(15.88) CONSTRUCTION 0.575(14.60) 0.360(9.14) K 0.055(1.40) 0.047(1.19) 1 3 2 0.110(2.79) 0.090(2.29) 0.100(2.54) 0.095(2.41) D (3) CIRCUIT 0.025(0.64) 0.037(0.940) 0.018(0.46) 0.027(0.686) 0.110(2.79) 0.080(2.03) 1 Gate 2 Source 3 Drain ( Heat Sink ) (1) G Dimensions in inches and (millimeters) S (2) Absolute Maximum Ratings Symbol D2PAK TA = 25°C unless otherwise noted Parameter CHM41A2NPT Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V Maximum Drain Current - Continuous 40 ID A - Pulsed (Note 3) 120 PD Maximum Power Dissipation TJ Operating Temperature Range -55 to 175 °C TSTG Storage Temperature Range -55 to 175 °C 62.5 °C/W 60 W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2006-01 RATING CHARACTERISTIC CURVES ( CHM41A2NPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS V 1 µA VGS = 12V,VDS = 0 V +100 nA VGS = -12V, VDS = 0 V -100 nA 1.5 V 20 mΩ (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 16 g FS Forward Transconductance VDS =5V, ID = 20A 23 0.5 S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time 15 VDS=10V, ID=20A 20 nC 2 VGS=4.5V 3 V DD= 10V 20 I D = 1A , VGS = 4.5 V 20 40 RGEN= 6Ω 72 130 20 40 40 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 20A , VGS = 0 V (Note 1) (Note 2) 40 A 1.3 V