LL60 THRU LL60P MINI MELF Glass-Encapsulate Diodes Small Signal Fast Switching Diodes Features MINI MELF(SOD- 8 0 / LL- 3 4 ) ● High reliability ● Low reverse current and low forward voltage Applications ● Low current rectification and high speed switching Absolute Maximum Ratings (Tj =25℃) Parameter Test Conditions Repetitive peak reverse voltagen Peak forward surge current tp =1s Forward continuous current Ta=25℃ Tyoe Symbol Value Unit LL60 VRRM 40 V LL60P VRRM 45 V LL60 IFSM 150 mA LL60P IFSM 500 mA LL60 IF 30 mA LL60P IF 50 mA Tstg -65~+125 Storage temperature range Maximum Thermal Resistance （Tj =25℃） Parameter Junction ambient Test Conditions Symbol on PC board 50mm• 50mm• 1.6mm RthJA Value Unit 250 K/W Electrical Characteristics（Ta=25℃ Unless otherwise specified） Parameter Test Conditions Reverse current Junction capacitance Reverse recovery time Symbol Min Typ Max Unit LL60 VF 0.32 0.5 V LL60P VF 0.24 0.5 V IF=30mA LL60 VF 0.65 1.0 V IF=200mA LL60P VF 0.65 1.0 V LL60 IR 0.1 0.5 uA LL60P IR 0.5 1.0 uA VR=1V, f=1MHz LL60 CJ 2.0 pF VR=10V, f=1MHz LL60P CJ 6.0 pF IF=1mA Forward voltage Type VR=15V IF=IR=1mA In=1mA RC=100 v High Diode Semiconductor 1.0 ns 1 Typical Characteristics High Diode Semiconductor 3 MINI MELF 0.063(1.6) 0.055(1.4) 0.020(0.5) 0.012(0.3) 0.020(0.5) 0.012(0.3) 0.146(3.7) 0.130(3.3) Dimensions in millimeters MINI MELF 1.8 3.5 0.7 JSHD JSHD High Diode Semiconductor 4 Packaging Specifications for Surface Mounted Glass Diodes 1. The method of packaging and dimension are shown as below figure. (Dimension in mm) LS-31 (MicroMELF) LS-34 (QuadroMELF) LL-34 (MiniMELF) DO-213AA(MiniMELF) 2,500 pcs per reel 20,000 pcs per box 8 reels per box 5 54 100,000 pcs per carton 5 boxes per carton 185 202 105 2 20 185 High Diode Semiconductor 5