INCHANGE MOSFET IRF730 N-channel mosfet transistor Features ·With TO-220 package ·Simple drive requirements ·Fast switching ·VDSS=400V; RDS(ON)≤1.0Ω;ID=5.5A ·1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 400 V VGS Gate-source voltage ±20 V Drain Current-continuous@ TC=25℃ 5.5 A Total Dissipation@TC=25℃ 74 W Max. Operating Junction temperature 150 ℃ -65~150 ℃ ID Ptot Tj Tstg Storage temperature TO-220 Electrical Characteristics Tc=25℃ SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA VGS(TH) Gate threshold voltage VDS= VGS; ID=0.25mA RDS(ON) Drain-source on-stage resistance IGSS MIN MAX 400 2 UNIT V 4 V VGS=10V; ID=3.3A 1.0 Ω Gate source leakage current VGS=±20V;VDS=0 ±100 nA IDSS Zero gate voltage drain current VDS=400V; VGS=0 25 uA VSD Diode forward voltage IF=5.5A; VGS=0 1.6 V