FPN330 / FPN330A FPN330 FPN330A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 30 VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current 3.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C - Continuous *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Characteristic Max Units FPN330 / FPN330A 1.0 W Thermal Resistance, Junction to Case 50 °C/W Thermal Resistance, Junction to Ambient 125 °C/W PD Total Device Dissipation RθJC RθJA 1999 Fairchild Semiconductor Corporation (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO IC = 10 mA, IB = 0 BVCBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage 30 V IC = 100 µA, IE = 0 50 V BVEBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 100°C VEB = 4.0 V, IC = 0 100 10 100 nA µA nA mV mV V V ON CHARACTERISTICS* hFE DC Current Gain IC = 100 mA, VCE = 2.0 V VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0 A, VCE = 2.0 V IC = 2.0 A, VCE = 2.0 V IC = 1.0 A, IB = 100 mA VBE(sat) Base-Emitter Saturation Voltage IC = 2.0 A, IB = 200 mA IC = 1.0 A, IB = 100 mA 500 450 1.0 1.25 VBE(on) Base-Emitter Saturation Voltage IC = 1.0 A, VCE = 2.0 V 1.0 V 30 pF 330 330A 100 250 120 50 330 330A SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz FT Transition Frequency IC = 100 mA, VCE = 5.0 V, f = 100 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 100 MHz FPN330 / FPN330A NPN Low Saturation Transistor (continued) 1.6 β = 10 1.4 1.2 1 - 40 °C 0.8 0.6 25 °C 125 °C 0.4 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 VBEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter On Voltage vs Collector Current 1.4 Vce = 2.0V 1.2 1 - 40 °C 0.8 0.6 25 °C 0.4 125 °C 0.2 0.0001 10 120 1.2 f = 1.0MHz β = 10 100 1 25°C 0.8 125°C 0.6 0.4 - 40°C C ibo 80 60 40 Cobo 20 0.2 0 0.001 0.01 0.1 1 I C- COLLECTOR CURRENT (A) 0 0.1 10 Vce = 2.0V PD - POWER DIS SIPATION (W) 700 125°C 600 500 400 300 25°C - 40°C 200 100 0 0.0001 50 100 1 TO-226 0.75 0.5 0.25 0 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V) Power Dissipation vs Ambient Temperature Current Gain vs Collector Current 800 H FE - CURRENT GAIN 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) Input/Output Capacitance vs Reverse Bias Voltage Collector-Emitter Saturation Voltage vs Collector Current CAPACITANCE (pf) VCESAT- COLLECTOR-EMITTER VOLTAGE (V) VBESAT-BASE-EMITTER SATURATION VOLTAGE(V) Typical Characteristics 10 0 25 50 75 100 TEMPERATURE ( °C) 125 150 FPN330 / FPN330A NPN Low Saturation Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G