MITSUBISHI IGBT MODULES CM75DU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM75DU-12H ● IC ..................................................................... 75A ● VCES .......................................................... 600V ● Insulated Type ● 2-elements in a pack APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 94 80 ±0.25 4 G1E1 12 4 4 11 18 E2 G2 C1 E2 C2E1 2–φ6.5 MOUNTING HOLES 23 23 48 CM 24 17 13 7 13.5 2.5 16 TAB C2E1 E2 21.2 +1 30 –0.5 LABEL #110. t=0.5 C1 G1 E1 25 7.5 16 2.5 E2 G2 3–M5NUTS 12mm deep CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM75DU-12H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso (Tj = 25°C, unless otherwise specified) Item Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage Note 1. 2. 3. 4. 5. 6. (Note 1) Ratings Unit 600 ±20 75 150 75 150 310 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 V V A A A A W °C °C Vrms N·m N·m g (Tj = 25°C, unless otherwise specified) Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Contact thermal resistance (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value VCE = VCES, VGE = 0V Min — Limits Typ — Max 1 IC = 7.5mA, VCE = 10V 4.5 6 7.5 V — — — — — — — — — — — — — — — — — 2.4 2.6 — — — 150 — — — — — — 0.18 — — 0.5 3.0 — 6.6 3.6 1 — 100 250 200 300 2.6 160 — 0.4 0.9 µA nF nF nF nC ns ns ns ns V ns µC K/W K/W — 0.07 — K/W Item ICES Rth(c-f) VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Test Conditions ±VGE = VGES, VCE = 0V IC = 75A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCC = 300V, IC = 75A, VGE = 15V VCC = 300V, IC = 75A VGE = ±15V RG = 8.3Ω Resistive load IE = 75A, VGE = 0V IE = 75A, die / dt = –150A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) Unit mA V Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM75DU-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 15 VGE=20 (V) 150 14 VCE = 10V 13 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 150 125 Tj=25°C 100 12 75 11 50 10 9 25 125 100 75 50 25 Tj = 25°C Tj = 125°C 8 2 4 6 8 0 10 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 7 5 EMITTER CURRENT IE (A) 0 0 20 40 60 10 Tj = 25°C 8 6 80 100 120 140 160 IC = 150A 4 IC = 75A 2 IC = 30A 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 101 Tj = 25°C CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0 3 2 102 7 5 3 2 101 7 5 3 2 Cies 100 7 5 Coes 3 2 10–1 Cres 7 5 3 2 3.0 VGE = 0V 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 7 1.0 1.4 1.8 2.2 2.6 Feb. 2009 3 MITSUBISHI IGBT MODULES CM75DU-12H HIGH POWER SWITCHING USE INSULATED TYPE td(off) 2 102 7 5 tr 3 td(on) 2 VCC = 300V VGE = ±15V RG = 8.3Ω 7 100 2 3 5 7 101 2 3 2 5 5 3 3 2 2 trr 102 7 5 Irr 3 2 2 3 5 7 101 100 2 3 5 7 102 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) Per unit base = Rth(j – c) = 0.4K/W 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) 7 5 2 COLLECTOR CURRENT IC (A) 7 5 3 2 101 3 101 0 10 5 7 102 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 100 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 – di /dt = 150A /µs 7 7 Tj = 25°C REVERSE RECOVERY CURRENT Irr (A) 3 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) tf NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (ns) 7 5 Tj = 125°C REVERSE RECOVERY TIME trr (ns) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 100 Per unit base = Rth(j – c) = 0.9K/W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 75A VCC = 200V 15 VCC = 300V 10 5 0 0 50 100 150 200 GATE CHARGE QG (nC) Feb. 2009 4