Infineon BAR63-02W Silicon pin diode Datasheet

BAR63...
Silicon PIN Diodes
• PIN diode for high speed
switching of RF signals
• Very low forward resistance (low insertion loss)
• Very low capacitance (high isolation)
• For frequencies up to 3GHz
• Pb-free (RoHS compliant) package
• Qualified according AEC Q1011)
BAR63-02..
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
!
, !
, ,
Type
BAR63-02L*
BAR63-02V
BAR63-02W
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
1*BAR63-02L
BAR63-06
BAR63-06W
!
,
Package
TSLP-2-1
SC79
SCD80
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
, ,
Configuration
single, leadless
single
single
single
series
series
common cathode
common cathode
common anode
common anode
LS(nH)
0.4
0.6
0.6
1.8
1.8
1.4
1.8
1.4
1.8
1.4
Marking
G
G
GG
white G
G4s
G4s
G5s
G5s
G6s
G6s
is not qualified according AEC Q101
1
2011-07-18
BAR63...
Maximum Ratings at T A = 25°C, unless otherwise specified
Symbol
Parameter
Value
Unit
Diode reverse voltage
VR
50
V
Forward current
IF
100
mA
Total power dissipation
Ptot
mW
BAR63-02L, T S ≤ 118°C
250
BAR63-02V, -02W, BAR63-03W, TS ≤ 115°C
250
BAR63-04...BAR63-06, T S ≤ 55°C
250
BAR63-04S, TS ≤ 115°C
250
BAR63-04W...BAR63-06W, TS ≤ 105°C
250
150
Junction temperature
Tj
Operating temperature range
Top
-55 ... 125
Storage temperature
Tstg
-55 ... 150
°C
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
K/W
BAR63-02L
≤ 125
BAR63-02V, BAR63-02W
≤ 140
BAR63-03W
≤ 155
BAR63-04...BAR63-06
≤ 380
BAR63-04S
≤ 180
BAR63-04W...BAR63-06W
≤ 180
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
50
-
-
V
IR
-
-
10
nA
VF
-
0.95
1.2
V
DC Characteristics
Breakdown voltage
V(BR)
I(BR) = 5 µA
Reverse current
VR = 35 V
Forward voltage
IF = 100 mA
1For
calculation of RthJA please refer to the Technical Information
2
2011-07-18
BAR63...
Electrical Characteristics at T A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Diode capacitance
pF
CT
VR = 5 V, f = 1 MHz
-
0.21
0.3
VR = 0 V, 100 MHz ... 1.8 GHz
-
0.3
-
Reverse parallel resistance
kΩ
RP
VR = 0 V, f = 100 MHz
-
500
-
VR = 0 V, f = 1 GHz
-
15
-
VR = 0 V, f = 1.8 GHz
-
5
-
Forward resistance
Ω
rf
IF = 5 mA, f = 100 MHz
-
1.2
2
IF = 10 mA, f = 100 MHz
-
1
-
τ rr
-
75
-
ns
I-region width
WI
-
4.5
-
µm
Insertion loss1)
IL
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
dB
IF = 1 mA, f = 1.8 GHz
-
0.15
-
IF = 5 mA, f = 1.8 GHz
-
0.11
-
IF = 10 mA, f = 1.8 GHz
-
0.1
-
VR = 0 V, f = 0.9 GHz
-
17.9
-
VR = 0 V, f = 1.8 GHz
-
12.3
-
VR = 0 V, f = 2.45 GHz
-
10
-
-
-
-
Isolation1)
ISO
Series inductance
1BAR63-02L
LS
in series configuration, Z = 50Ω
3
2011-07-18
BAR63...
Diode capacitance CT = ƒ (VR )
Reverse parallel resistance RP = ƒ(VR)
f = 1MHz - 1.8GHz
f = Parameter
CT
10 3
EHD07139
0.5
100 MHz
KOhm
pF
0.4
10 2
Rp
1 GHz
0.3
10 1
1.8 GHz
0.2
10 0
0.1
0
0
10
V
VR
20
10 -1
0
30
5
10
15
Forward current IF = ƒ (VF)
f = 100MHz
TA = Parameter
rf
30
VR
Forward resistance rf = ƒ (IF)
EHD07138
10 2
V
20
ΙF
Ω
10 3
mA
EHD07171
BAR 63...
10 2
10 1
10 1
10 0
25 ˚C
40 ˚C
85 ˚C
10 -1
10 0
10 -2
10 -1 -2
10
10
-1
10
0
10
1
mA 10
10 -3
0.3
2
ΙF
0.5
0.8
1
V
1.2
VF
4
2011-07-18
BAR63...
Forward current IF = ƒ (TS )
Forward current IF = ƒ (TS )
BAR63-04...BAR63-06
BAR63-02V, BAR63-02W
120
120
mA
mA
IF
80
IF
80
60
60
40
40
20
20
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
15
30
45
60
75
90 105 120 °C
TS
150
TS
Forward current IF = ƒ (TS )
Forward current IF = ƒ (TS )
BAR63-03W
BAR63-04W...BAR63-06W
120
120
mA
mA
IF
80
IF
80
60
60
40
40
20
20
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
TS
15
30
45
60
75
90 105 120 °C
150
TS
5
2011-07-18
BAR63...
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR63-04...BAR63-06
IFmax/ IFDC = ƒ (t p)
BAR63-04...BAR63-06
R thJS
EHB07146
5
K/W
Ι F max 10
Ι F DC
5
EHB07147
2
tP
t
D= P
T
T
10 2
D=
0.5
0.2
0.1
0.05
0.05
0.01
0.005
0
5
10 1
5
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
5
tP
D=
10 0
10 -6
10
-5
10
-4
tP
T
10
T
-3
10
-2
s
tP
10
10 0
10 -6
0
10 -5
10 -4
10 -3
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR63-02V, BAR63-02W
IFmax/ IFDC = ƒ (t p)
10 -2
s
tP
10 0
s
10
BAR63-02V, BAR63-02W
10 1
10 3
IFmax/ IFDC
RthJS
K/W
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
0
tp
6
2011-07-18
BAR63...
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR63-03W
IFmax/ IFDC = ƒ (t p)
BAR63-03W
10
10 1
3
IFmax/ IFDC
RthJS
K/W
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
10
-5
10
-4
10
-3
10
-2
tp
s
10
0
10
0
tp
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BAR63-04W...BAR63-06W
IFmax/ IFDC = ƒ (t p)
BAR63-04W...BAR63-06W
10 3
10 3
-
IFmax/ IFDC
RthJS
K/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0 -6
10
10
-5
10
-4
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
-3
10
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
tp
7
2011-07-18
BAR63...
Insertion loss IL = -|S21|2 = ƒ(f)
Isolation ISO = -|S21 |2 = ƒ(f)
IF = Parameter
VR = Paramter
BAR63-02L in series configuration, Z = 50Ω
BAR63-02L in series configuration, Z = 50Ω
0
0
dB
|S21|²
|S21|²
10 mA
dB
5 mA
-10
1 mA
-0.2
-15
0V
1V
10 V
-20
-0.3
-25
-0.4
0
1
2
3
4
GHz
-30
0
6
f
1
2
3
4
GHz
6
f
8
2011-07-18
Package SC79
9
BAR63...
2011-07-18
Package SCD80
BAR63...
Package Outline
0.2
M
A
+0.05
0.13 -0.03
0.8 ±0.1
0.2 ±0.05
10˚MAX.
1.7 ±0.1
1
0.3 ±0.05
Cathode
marking
7˚ ±1.5˚
1.3 ±0.1
A
2
0.7 ±0.1
0.35
1.45
Foot Print
0.35
Marking Layout (Example)
2005, June
Date code
BAR63-02W
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch)
Reel ø330 mm = 10.000 Pieces/Reel
Reel with 2 mm Pitch
2
0.2
2.5
8
1.45
Standard
4
Cathode
marking
0.4
0.9
Cathode
marking
10
0.7
2011-07-18
BAR63...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC75 1) ) CES-Code
Month 2 0 03
2 0 04
2005
2006
2 0 07
2008
2009
2010
2011
2012
2 0 13
2014
01
a
p
A
P
a
p
A
P
a
p
A
P
02
b
q
B
Q
b
q
B
Q
b
q
B
Q
03
c
r
C
R
c
r
C
R
c
r
C
R
04
d
s
D
S
d
s
D
S
d
s
D
S
05
e
t
E
T
e
t
E
T
e
t
E
T
06
f
u
F
U
f
u
F
U
f
u
F
U
07
g
v
G
V
g
v
G
V
g
v
G
V
08
h
x
H
X
h
x
H
X
h
x
H
X
09
j
y
J
Y
j
y
J
Y
j
y
J
Y
10
k
z
K
Z
k
z
K
Z
k
z
K
Z
11
l
2
L
4
l
2
L
4
l
2
L
4
12
n
3
N
5
n
3
N
5
n
3
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
11
2011-07-18
Package SOD323
12
BAR63...
2011-07-18
Package SOT23
BAR63...
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
13
2011-07-18
Package SOT323
BAR63...
Package Outline
0.9 ±0.1
2 ±0.2
0.3 +0.1
-0.05
0.1 MAX.
3x
0.1
M
0.1
A
1
2
1.25 ±0.1
0.1 MIN.
2.1 ±0.1
3
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
0.8
1.6
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
14
2011-07-18
Package TSLP-2-1
15
BAR63...
2011-07-18
BAR63...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
16
2011-07-18
Similar pages