Kersemi HLDD30N10 N-channel enhancement mode power mosfet Datasheet

HLDD30N10
N-Channel Enhancement Mode Power MOSFET
Description
Features
The HLDD30N10 uses advanced trench technology and
□ VDS =100V,ID =30A
design to provide excellent RDS(ON) with low gate charge.
□ RDS(ON):31mΩ@VGS=10V
□ Low gatecharge.
□ Green deviceavailable.
□ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON).
□ Excellentpackageforgoodheatdissipation.
It can be used in a wide variety of applications.
Application
□
□
□
Power switchingapplication
Hard switched and high frequencycircuits
Uninterruptible powersupply
Marking and pin assignment
N-Channel MOSFET
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID
EAS
PD
TJ, TSTG
Continuous Drain Current-
30
Continuous Drain Current-TC=100℃
21
Pulsed Drain Current
70
Single Pules Avalanche Energy5
256
Power Dissipation
85
Operating and Storage Junction Temperature Range
A
A
mJ
W
-55 to +175
℃
Ratings
Units
1.8
℃/W
Thermal Characteristic
Symbol
RƟJC
RƟJA
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Parameter
2
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
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HLDD30N10
Package Marking and Ordering Information
Part NO.
Marking
Package
HLDD30N10
D30N10
TO-252
Electrical Characteristics (TC=25℃unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VGS=0V,ID=250μA
100
115
---
V
VGS=0V, VDS=100V
---
---
1
μA
Tc=125℃ VDS=480V
---
---
---
μA
VGS=±20V, VDS=0V
---
---
±100
nA
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
On Characteristics3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1.3
1.9
2.5
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=10A
---
27
31
mΩ
---
2000
---
---
300
---
---
250
---
---
7
---
ns
---
7
---
ns
---
29
---
ns
---
7
---
ns
---
39
---
nC
---
8
---
nC
---
12
---
nC
---
---
1. 2
V
Dynamic Characteristics4
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=25V, VGS=0V, f=1MHz
pF
Switching Characteristics4
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDS=50V,RL=5Ω
RGEN=3Ω , VGS=10V
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain “Miller” Charge
VGS=10V, VDS=50V,
ID=10A
Drain-Source Diode Characteristics
VSD
trr
Qrr
Source-Drain Diode Forward
Voltage
Is=10A
3
Reverse Recovery Time
IS=10A,VGS =0V
---
32
---
ns
Reverse Recovery Charge
diF/dt=100A/μs (Note3)
---
53
---
nC
Notes:
1. Repetitive Rating: Pulse widthlimited bymaximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 s ec.
3. Pulse Test: Pulse W idth ≤ 300μs, Duty Cycle ≤2 % .
4. Guaranteed by design, not subject toproduction
5. EAS Condition : Tj=25℃ ,V DD=50V,VG=10V,L=0.5mH,Rg=25 , IAS=32A
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2017.SZ193. V1.0
HLDD30N10
Typical Characteristics TJ=25℃
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unless otherwise noted
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HLDD30N10
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HLDD30N10
TO-252 Package Information
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