DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04EHE, NP88N04KHE NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP88N04EHE-E1-AY Note1, 2 NP88N04EHE-E2-AY Note1, 2 NP88N04KHE-E1-AY Note1 NP88N04KHE-E2-AY Note1 NP88N04CHE-S12-AZ Note1, 2 NP88N04DHE-S12-AY Note1, 2 NP88N04MHE-S18-AY Note1 NP88N04NHE-S18-AY Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g Sn-Ag-Cu Pure Sn (Tin) TO-220 (MP-25) typ. 1.9 g Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance (TO-262) Ciss = 7300 pF TYP. • Built-in gate protection diode (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14236EJ8V0DS00 (8th edition) Date Published October 2007 NS Printed in Japan 1999, 2000, 2007 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V ID(DC) ±88 A ID(pulse) ±352 A Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Note2 Total Power Dissipation (TA = 25°C) PT1 1.8 W Total Power Dissipation (TC = 25°C) PT2 288 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C Note3 IAS 75/88 A Note3 EAS 562/232 mJ Storage Temperature Single Avalanche Current Single Avalanche Energy Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 μs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.52 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W 2 Data Sheet D14236EJ8V0DS NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 μA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 3.0 4.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 44 A 30 60 Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 44 A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time tr S 3.4 4.3 mΩ VDS = 25 V, 7300 11000 pF VGS = 0 V, 1400 2100 pF 620 1120 pF VDD = 20 V, ID = 44 A, 38 84 ns VGS = 10 V, 27 68 ns 110 220 ns 32 80 ns 180 nC f = 1 MHz RG = 1 Ω Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 32 V, 120 QGS VGS = 10 V, 30 nC 43 nC IF = 88 A, VGS = 0 V 0.95 V Gate to Source Charge ID = 88 A Gate to Drain Charge QGD Body Diode Forward Voltage VF(S-D) Reverse Recovery Time trr IF = 88 A, VGS = 0 V, 64 ns Qrr di/dt = 100 A/μs 99 nC Reverse Recovery Charge TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% IAS 90% VDS VGS 0 BVDSS VDS 10% 0 10% Wave Form VDS ID τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D14236EJ8V0DS 3 NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE TYPICAL CHARACTERISTICS (TA = 25°C) Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 350 100 80 60 40 20 0 0 25 50 75 300 250 200 150 100 50 0 100 125 150 175 200 0 25 TC - Case Temperature - °C PW ID(pulse) 10 0 1m 10 Po D Lim wer C ite Dis d sip a μs 10 μs s ms tio n 10 1 Single pulse TC = 25°C 0.1 1 0.1 100 125 150 175 200 800 = EAS - Single Avalanche Energy - mJ ID - Drain Current - A 100 d ite im V) ) L 10 n o S( = ID(DC) RDVGS ( 75 Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR Figure3. FORWARD BIAS SAFE OPERATING AREA 1000 50 TC - Case Temperature - °C 10 700 600 562 mJ 500 IAS = 75 A 88 A 400 300 232 mJ 200 100 100 VDS - Drain to Source Voltage - V 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - °C Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 100 Rth(ch-A) = 83.3°C/W 10 1 Rth(ch-C) = 0.52°C/W 0.1 0.01 10 μ Single pulse TC = 25°C 100 μ 1m 10 m 100 m 1 PW - Pulse Width - s 4 Data Sheet D14236EJ8V0DS 10 100 1000 NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE Figure6. FORWARD TRANSFER CHARACTERISTICS 100 Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ID - Drain Current - A ID - Drain Current - A 500 10 TA = −50°C 25°C 75°C 175°C 1 0.1 400 VGS = 10 V 300 200 100 0.01 2 3 4 VDS = 10 V 6 7 5 0 Pulsed 0.5 0 10 TA = 175°C 75°C 25°C −50°C 0.1 0.01 0.01 0.1 10 1 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 15 10 5 0 VGS = 10 V 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed 1 2.0 1.5 VDS - Drain to Source Voltage - V VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S VGS - Gate to Source Voltage - V 1.0 Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 Pulsed 5 ID = 44 A 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VDS = VGS ID = 250 μA 4.0 3.0 2.0 1.0 0 −50 0 50 100 150 Tch - Channel Temperature - °C ID - Drain Current - A Data Sheet D14236EJ8V0DS 5 Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 9 8 7 6 5 VGS = 10 V 4 1000 IF - Diode Forward Current - A 3 2 1 ID = 44 A 0 −50 50 0 100 VGS = 10 V 100 0V 10 1 0.1 0 150 Tch - Channel Temperature - °C Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1.0 0.5 VF(S-D) - Source to Drain Voltage - V Figure15. SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1 MHz 10000 Ciss Coss 1000 Crss 100 0.1 1 10 100 tf td(off) 100 td(on) tr 10 VDD = 20 V VGS = 10 V 1 RG = 1 Ω 0.1 Figure16. REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT di/dt = 100 A/μs VGS = 0 V 100 10 1 0.1 1.0 10 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 1000 10 1 ID - Drain Current - A VDS - Drain to Source Voltage - V 100 100 10 90 9 80 8 VDD = 32 V 20 V 8V 70 60 7 VGS 6 50 5 40 4 30 3 20 2 VDS 1 10 0 IF - Diode Forward Current - A 6 1.5 1000 100000 Ciss, Coss, Crss - Capacitance - pF Pulsed ID = 88 A 0 20 40 60 80 QG - Gate Charge - nC Data Sheet D14236EJ8V0DS 100 0 120 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE PACKAGE DRAWINGS (Unit: mm) Note 1.3 ± 0.2 10.0 ± 0.3 No plating 7.88 MIN. 4 2 3 1.4 ± 0.2 0.7 ± 0.2 2.54 TYP. 9.15 ± 0.3 8.0 TYP. 8.5 ± 0.2 1 5.7 ± 0.4 1.0 ± 0.5 4 4.45 ± 0.2 0.025 to 0.25 P. .5R 0 TY R 0.8 2.54 TYP. P. TY 0.5 ± 0.2 0.75 ± 0.2 0.5 ± 2.8 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 1.Gate 2.Drain 2.5 3.Source 15.5 MAX. 5.9 MIN. 4 1 0.75 ± 0.1 2.54 TYP. 1.3 ± 0.2 12.7 MIN. 6.0 MAX. 1 2 3 0.5 ± 0.2 2.8 ± 0.2 0.75 ± 0.3 2.54 TYP. 2 3 1.0 ± 0.5 10 TYP. Note 4.8 MAX. 1.3 ± 0.2 8.5 ± 0.2 1.3 ± 0.2 4.Fin (Drain) 12.7 MIN. 4.8 MAX. φ 3.6 ± 0.2 10.0 TYP. 1.3 ± 0.2 3 4)TO-262 (MP-25 Fin Cut) 4 8ο 0.25 Note 10.6 MAX. 0.2 0 to 2.54 3)TO-220 (MP-25) 1.3 ± 0.2 2.54 ± 0.25 4.8 MAX. 10 TYP. 1.35 ± 0.3 2)TO-263 (MP-25ZK) 15.25 ± 0.5 1)TO-263 (MP-25ZJ) 3.0 ± 0.3 <R> 0.5 ± 0.2 2.8 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note Not for new design Data Sheet D14236EJ8V0DS 7 NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE 1 2 3 0.8 ± 0.1 0.5 ± 0.2 2.54 TYP. 2.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.3 ± 0.2 1.27 ± 0.2 3.1 ± 0.3 15.9 MAX. 1.27 ± 0.2 4 4.45 ± 0.2 10.1 ± 0.3 3 10.0 ± 0.2 13.7 ± 0.3 13.7 ± 0.3 1 2 4.45 ± 0.2 1.3 ± 0.2 3.1 ± 0.2 4 φ 3.8 ± 0.2 6.3 ± 0.3 2.8 ± 0.3 10.0 ± 0.2 1.2 ± 0.3 6)TO-262 (MP-25SK) 8.9 ± 0.2 5)TO-220 (MP-25K) 0.8 ± 0.1 0.5 ± 0.2 2.54 TYP. 2.54 TYP. 2.5 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 8 Data Sheet D14236EJ8V0DS NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE <R> TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side <R> Reel side MARKING INFORMATION NEC 88N04 HE <R> Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Infrared reflow Maximum temperature (Package's surface temperature): 260°C or below MP-25ZJ, MP-25ZK Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Recommended Condition Symbol IR60-00-3 Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Wave soldering Maximum temperature (Solder temperature): 260°C or below MP-25, MP-25K, MP-25SK, Time: 10 seconds or less MP-25 Fin Cut Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350°C or below MP-25ZJ, MP-25ZK, Time (per side of the device): 3 seconds or less MP-25K, MP-25SK Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 300°C or below MP-25, MP-25 Fin Cut Time (per side of the device): 3 seconds or less THDWS P350 P300 Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D14236EJ8V0DS 9 NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE • The information in this document is current as of October, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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