Previous Datasheet Index Next Data Sheet PD - 9.694A IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.6V G @VGE = 15V, IC = 41A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 70 41 320 140 ±20 20 200 78 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-33 To Order Min. Typ. Max. — — — — — 0.24 — 6 (0.21) 0.64 — 40 — Units °C/W g (oz) Previous Datasheet Index Next Data Sheet IRGPC50S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, IC = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.75 — V/°C VGE = 0V, IC = 1.0mA — 1.4 1.6 IC = 41A VGE = 15V — 1.9 — V IC = 80A See Fig. 2, 5 — 1.5 — IC = 41A, TJ = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -9.3 — mV/°C VCE = VGE, IC = 250µA 17 34 — S VCE = 100V, IC = 41A — — 250 µA VGE = 0V, VCE = 600V — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. 120 16 52 52 59 1200 500 0.35 15 16 26 58 2000 1100 28 13 3100 240 37 Max. Units Conditions 150 IC = 41A 23 nC VCC = 400V See Fig. 8 90 VGE = 15V — TJ = 25°C — ns IC = 41A, VCC = 480V 1400 VGE = 15V, RG = 5.0Ω 700 Energy losses include "tail" — — mJ See Fig. 9, 10, 11, 14 22 — TJ = 150°C, — ns IC = 41A, VCC = 480V — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 10, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-34 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGPC50S 100 Fo r both: 80 LO A D C U R RE NT (A ) Triangular w a ve: D uty cy c le: 50% TJ = 125°C T sink = 90°C G ate drive as s pec ified Po wer D issipation = 40W C lam p voltage: 80% of rated 60 S quare w a ve: 60% of rated v oltage 40 20 Id e a l d io d e s 0 0.1 1 10 100 f, F reque ncy (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 IC , Collector-to-E m itter C urrent (A) I C , C ollector-to-E mitter C urrent (A ) 1000 TJ = 2 5°C TJ = 15 0°C 100 10 TJ = 2 5°C T J = 15 0°C 100 10 V G E = 15 V 20 µs P UL S E W ID TH 1 0.1 1 V C C = 1 00 V 5 µs P U L S E W ID TH 1 5 10 10 15 20 V G E , G ate-to-E m itter V olta g e (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-35 To Order Revision 0 Previous Datasheet Index Next Data Sheet IRGPC50S LIM IT E D B Y P A C K A G E 2.5 V G E = 1 5V V CE , Co lle ctor-to-E m itter V oltage (V ) M axim um D C C ollector C urrent (A) 80 60 40 20 VG E = 1 5 V 80 µs P UL S E W ID TH 2.0 I C = 82 A 1.5 I C = 41 A 1.0 I C = 2 1A 0.5 0.0 0 25 50 75 100 125 -60 150 T C , C ase Tem perature (°C ) -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T he rm al R espons e (Z thJC ) 1 D = 0 .5 0 0 .2 0 0.1 0 .1 0 PDM 0 .0 5 t 0 .0 2 0.01 0.00001 t2 S ING L E P U L S E (TH E R M A L R E S PO N S E) 0 .0 1 1 N o te s : 1 . D u ty fa c to r D = t 1 / t 2 2 . P e a k TJ = P D M x Z th J C + T C 0.000 1 0.001 0.01 0.1 1 t 1 , R ectangu lar Pulse D u ration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-36 To Order 10 Previous Datasheet Index Next Data Sheet IRGPC50S 70 0 0 VG E , G ate-to -E m itter V o ltag e (V ) 60 0 0 V C E = 48 0 V I C = 4 1A 16 Cies 50 0 0 C , C apacitance (pF ) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 12 40 0 0 Coes 30 0 0 20 0 0 Cres 10 0 0 0 8 4 0 1 10 100 0 25 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC Total S w itching Losses (m J) 20 75 100 1 25 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 = 48 0V = 15V = 25 °C = 4 1A To ta l S w itc hing Lo sse s (m J) 21 50 Q g , Total G ate C harge (nC ) 19 18 17 R G = 2.0 Ω V GE = 1 5V V CC = 48 0V I C = 8 2A I C = 41 A 10 I C = 21 A 16 15 1 0 10 20 30 40 50 -60 R G , G ate R esistance (Ω ) -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-37 To Order Previous Datasheet Index Next Data Sheet IRGPC50S RG TC VC C VG E 50 1 00 = 2.0 Ω = 150 °C = 4 80 V = 15 V I C , C ollector-to-E m itter Current (A ) To ta l S w itc h ing L os s es (m J ) 60 40 30 20 10 VGGE E= 2 0V T J = 125 °C S A FE O P E RA TIN G A RE A 10 1 0 0 20 40 60 80 1 100 10 10 0 V C E , Collecto r-to-E m itter V oltage (V ) I C , C o lle c to r-to -E m itte r C u rre n t (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) C-38 To Order Section D - page D-13 1000