EIC FKBP210 Fast recovery bridge rectifier Datasheet

FKBP200 - FKBP210
FAST RECOVERY
BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
KBP
0.71 (18.0)
0.63 (16.0)
FEATURES :
*
*
*
*
*
*
*
High case dielectric strength of 2000 V DC
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Ideal for printed circuit board
0.825 (20.95)
0.605 (15.36)
+ AC
AC
0.035 (0.89)
0.028 (0.71)
0.500
(12.7)
0.16 (4.00)
0.14 (3.55)
0.276 (7.01 )
0.236 (5.99)
0.105 (2.66)
0.085 (2.16)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
FKBP FKBP FKBP FKBP FKBP FKBP FKBP
200
201
202
204
206
208
210
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Current Tc = 50 °C
IF(AV)
2.0
Amps.
IFSM
35
Amps.
2
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at IF = 1.0 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (Note 1)
2
It
VF
10
AS
1.3
Volts
IR
10
µA
I R(H)
Trr
µA
500
150
250
500
ns
30
°C/W
Operating Junction Temperature Range
RθJA
TJ
- 50 to + 150
°C
Storage Temperature Range
T STG
- 50 to + 150
°C
Typical Thermal Resistance (Note 2)
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal resistance from Junction to Ambient on P.C. Board with, 0.47" X 0.47" ( 12 mm. x 12 mm. ) Cu. pads.
UPDATE : APRIL 21, 1998
RATING AND CHARACTERISTIC CURVES ( FKBP200 - FKBP210 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5 A
D.U.T.
+
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25 A
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1 cm
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
2.5
2.0
1.5
1.0
0.5
Tc = 50 °C
40
30
20
10
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
0
175
1
2
CASE TEMPERATURE, ( °C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
6
10
20
40
60
100
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
REVERSE CURRENT, MICROAMPERES
PER DIODE
100
FORWARD CURRENT, AMPERES
4
NUMBER OF CYCLES AT 60Hz
Pulse Width = 300 µs
2% Duty Cycle
TJ = 25 °C
10
1.0
0.1
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE, VOLTS
1.8
2.0
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