MSP1018D -100V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design Lead Free ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance ● ESD protested Application ● Power management in notebook computer ● Portable equipment and battery powered systems PIN Configuration Marking and pin assignment TO-252 -2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSP1018D MSP1018D TO-252-2L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V ID -18 A ID (100℃) -12 A Pulsed Drain Current IDM -72 A Maximum Power Dissipation PD 70 W 0.56 W/℃ -55 To 175 ℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Operating Junction and Storage Temperature Range MORE Semiconductor Company Limited TJ,TSTG http://www.moresemi.com 1/6 MSP1018D Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJc ℃/W 1.79 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -100 - - V Zero Gate Voltage Drain Current IDSS VDS=-100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±20 μA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.9 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-16A - 85 100 mΩ gFS VDS=-50V,ID=-10A 5 - - S - 1300 - PF - 400 - PF Crss - 240 - PF Turn-on Delay Time td(on) - 16 - nS Turn-on Rise Time tr VDD=-50V,ID=-16A - 73 - nS td(off) VGS=-10V,RGEN=9.1Ω - 34 - nS - 57 - nS - 61 - nC - 14 - nC - 29 - nC Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=-25V,VGS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-50V,ID=-16A, VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-10A - - -1.2 V Diode Forward Current (Note 2) IS - - - -18 A trr TJ = 25°C, IF =-16A - 88.3 - nS (Note3) - 65.9 - nC Reverse Recovery Time Reverse Recovery Charge Qrr Forward Turn-On Time ton di/dt = 100A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=-50V,VG=-10V,L=0.5mH,Rg=25Ω MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSP1018D Test Circuit 1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSP1018D ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Figure 2 Transfer Characteristics ID- Drain Current (A) Figure 3 Rdson- Drain Current MORE Semiconductor Company Limited Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward http://www.moresemi.com 4/6 ID- Drain Current (A) C Capacitance (nF) MSP1018D TC Case Temperature(℃) Vds Drain-Source Voltage (V) Figure 9 Drain Current vs Case Temperature ID- Drain Current (A) Power Dissipation (w) Figure 7 Capacitance vs Vds TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 Power De-rating r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance MORE Semiconductor Company Limited http://www.moresemi.com 5/6 MSP1018D TO-252 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 L2 2.900 TYP. 1.400 L3 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. MORE Semiconductor Company Limited 0.211 TYP. http://www.moresemi.com 6/6