LED - Chip ELC-840-28-1 Preliminary 10.04.2007 rev. 04/06 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs N (cathode) up typ. dimensions (µm) 460 360 300 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm dotted, 25% covered PD-02 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 1.5 1.7 V Forward voltage IF = 20 mA VF Reverse voltage IR = 100 µA VR 5 Radiant power1 IF = 20 mA Φe 2.0 Radiant power2 IF = 20 mA Φe Peak wavelength IF = 20 mA λp Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 35 nm Switching time IF = 20 mA tr, tf 40 ns 1 2 V 830 3.0 mW 6.0 mW 840 850 nm Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Lot N° Type Φe(typ) [mW] VF(typ) [V] Quantity ELС-840-28-1 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1