Seme LAB BFY90 Silicon planar epitaxial npn transistor Datasheet

BFY90
MECHANICAL DATA
Dimensions in mm (inches)
4.95 (0.195)
4.52 (0.178)
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
12.7 (0.500)
min.
5.33 (0.210)
4.32 (0.170)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
DESCRIPTION
The BFY90 is a low noise transistor intended for
use in broad and narrow-band amplifiers up to
1GHz.
2.54 (0.100)
Nom.
4
3
1
2
TO72
Pin 1 – Emitter
Pin 3 – Collector
Pin 2 –Base
Pin 4 – Connected to Case
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
30V
VCER
Collector – Emitter Voltage (RBE £ 50W )
30V
VCEO
Collector – Emitter Voltage
15V
VEBO
Emitter – Base Voltage
2.5v
IC(AV)
Average Collector Current
25mA
ICM
Peak Collector Current (f ³1MHz)
50mA
Ptot
Power Dissipation at Tamb = 25°C
200mW°C
Tj
Storage Temperature
200°C
Tstg,
Junction Temperature
–65 to +200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Prelim. 12/99
BFY90
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
10
nA
ICBO
Collector Cut Off Current
VCB = 15V
IE = 0
V(BR)CEO*
Collector Emitter Breakdown Voltage IC = 10mA
IB = 0
15
V(BR)CER*
Collector Emitter Breakdown Voltage IC = 10mA
RBE £ 50W
30
VCEK
Collector Emitter Knee Voltage
IC = 10mA
Static Forward Current Transfer
VCE = 1V
IC = 2mA
25
150
Ratio
VCE = 1V
IC = 25mA
20
125
VCE = 5V
IC = 2mA
h21E
V
0.75
—
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
f = 500MHz
VCE = 5V
1
GHz
IC = 25mA
1.3
f = 500MHz
C22b(1)
C12e(2)
NF
Gp
PO(2)
Output Capacitance
VCB = 10V
f = 1MHz
Open-Circuit Reverse Transfer
VCE = 5V
Capacitance
f = 1MHz
Noise Figure
Power Gain
Output Power
IE = 0.
IC = 0
VCE = 5V
IC = 2mA
f = 100kHz
RG
VCE = 5V
IC = 2mA
f = 200MHz
RG
VCE = 5V
IC = 2mA
f = 500MHz
RG = 50W
VCE = 5V
IC = 2mA
f = 800MHz
RG
VCE = 10V
IC = 14mA
0.8
pF
4
3.5
optimum
dB
5
5
optimum
VCE = 10V
IC = 14mA
f1 = 202MHz
f2= 205MHz
Output SWR £ 2
£
pF
optimum
f = 200MHz
TOS sortie
1.5
21
dB
10
mW
2
dIM* = - 30dB at 2 f2 - f1 =
208MHz
THERMAL DATA
Rth(j-a)
Junction-ambient thermal resistance
£
0.875 Max
°C/W
Rth(j-c)
Junction-case thermal resistance
£
0.575 Max
°C/W
* Pulse test tp = 300ms , d £ 2%
(1) Shield Lead (case) not connected
* Intermodulation Distortion
Semelab plc.
(2) Shield Lead (case) grounded
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Prelim. 12/99
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