Dynex DIM600BSS12-A000 Single switch igbt module Datasheet

DIM600BSS12-A000
DIM600BSS12-A000
Single Switch IGBT Module
Replaces February 2004 version, issue PDS5692-2.0
FEATURES
■
10µs Short Circuit Withstand
■
Non Punch Through Silicon
■
Isolated Copper Baseplate
DS5692-3.0 June 2004
KEY PARAMETERS
VCES
(typ)
VCE(sat)*
(max)
IC
(max)
IC(PK)
1200V
2.2V
600A
1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
■
Inverters
■
Motor Controllers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
1(C)
2(E)
5(E1)
3(G1)
4(C1)
The DIM600BSS12-A000 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM600BSS12-A000
Note: When ordering, please use the whole part number.
Outline type code: B
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/9
DIM600BSS12-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
1200
V
±20
V
Continuous collector current
Tcase = 80˚C
600
A
IC(PK)
Peak collector current
1ms, Tcase = 115˚C
1200
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
4166
W
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
56
kA2s
Visol
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V
QPD
Partial discharge - per module
IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS
10
PC
IC
I2t
2/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600BSS12-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material:
Creepage distance:
Al2O3
Cu
20mm
Thermal resistance - transistor
425
Test Conditions
Parameter
Symbol
Rth(j-c)
Clearance: 11mm
CTI (Critical Tracking Index):
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
30
˚C/kW
-
-
67
˚C/kW
-
-
15
˚C/kW
junction to case
Rth(j-c)
Thermal resistance - diode
Continuous dissipation junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
3
-
5
Nm
Electrical connections - M6
2.5
-
5
Nm
Electrical connections - M4
1.1
-
2
Nm
-
Storage temperature range
Screw torque
Mounting - M6
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/9
DIM600BSS12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
12
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
2
µA
VGE(TH)
Gate threshold voltage
IC = 30mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)†
Collector-emitter saturation voltage
VGE = 15V, IC = 600A
-
2.2
2.7
V
VGE = 15V, IC = 600A, , Tcase = 125˚C
-
2.6
3.1
V
Symbol
ICES
IGES
Parameter
Collector cut-off current
Test Conditions
IF
Diode forward current
DC
-
-
600
A
IFM
Diode maximum forward current
tp = 1ms
-
-
1200
A
VF†
Diode forward voltage
IF = 600A
-
2.2
2.5
V
IF = 600A, Tcase = 125˚C
-
2.3
2.6
V
VCE = 25V, VGE = 0V, f = 1MHz
-
100
-
nF
Cies
Input capacitance
LM
Module inductance
-
-
20
-
nH
Internal transistor resistance
-
-
0.23
-
mΩ
RINT
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 900V,
I1
-
4100
-
A
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt
I2
-
3400
-
A
IEC 60747-9
Note:
†
Measured at the power busbars and not the auxiliary terminals
L* is the circuit inductance + LM
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600BSS12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 600A
-
710
-
ns
Fall time
VGE = ±15V
-
70
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
70
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.2Ω
-
190
-
ns
L ~ 70nH
-
70
-
ns
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
Test Conditions
EON
Turn-on energy loss
-
60
-
mJ
Qg
Gate charge
-
6
-
µC
Qrr
Diode reverse recovery charge
IF = 500A, VR = 600V,
-
80
-
µC
Irr
Diode reverse current
dIF/dt = 4800A/µs
-
370
-
A
-
25
-
mJ
Min.
Typ.
Max.
Units
IC = 600A
-
890
-
ns
Fall time
VGE = ±15V
-
100
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
90
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.2Ω
-
440
-
ns
L ~ 70nH
-
85
-
ns
-
90
-
mJ
IF = 500A, VR = 600V,
-
125
-
µC
dIF/dt = 4600A/µs
-
390
-
A
-
48
-
mJ
EREC
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
Diode reverse recovery energy
Test Conditions
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5/9
DIM600BSS12-A000
TYPICAL CHARACTERISTICS
1200
1200
Common emitter
Tcase = 25˚C
Vce is measured at power busbars
and not the auxiliary terminals
1000
800
Collector current, IC - (A)
Collector current, IC - (A)
1000
Common emitter
Tcase = 125˚C
600
400
200
0
0
1.0
1.5
2.0
2.5
3.0
Collector-emitter voltage, Vce - (V)
3.5
800
600
400
200
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
0.5
0
0
4.0
Fig. 3 Typical output characteristics
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, Vce - (V)
70
105
Switching energy, Esw - (mJ)
Tc = 125˚C,
Vcc = 600V,
120 IC = 300A
60
50
40
30
20
90
75
60
45
30
Eon
Eoff
Erec
10
100
200
300
400
500
600
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
6/9
5.0
135
Tc = 125˚C,
Vcc = 600V,
80 Rg = 2.2 Ohms
0
0
4.5
Fig. 4 Typical output characteristics
90
Switching energy, Esw - (mJ)
Vce is measured at power busbars
and not the auxiliary terminals
Eon
Eoff
Erec
15
0
1.3
2.6
3.3
4.0
Gate resistance, Rg - (Ohms)
4.6
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600BSS12-A000
1200
1800
Tj = 25˚C
Tj = 125˚C
VF is measured at power busbars
and not the auxiliary terminals
1000
1600
800
Collector current, Ic - (A)
Forward current, IF - (A)
1400
1200
1000
600
400
800
600
400 T
case = 125˚C
Vge =15V
200 Rg = 2.2 Ohms
200
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0
4.0
Module IC
Chip IC
200
Forward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
400
600
800
1000
1200
Collector-emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
700
100
Tcase =125˚C
Diode
Transient thermal impedance, Zth (j-c) - (°C/kW )
Reverse recovery current, Irr - (A)
600
500
400
300
200
100
Transistor
10
1
IGBT
Diode
0
0
200
1400
400
600
800
1000
1200
Reverse voltage, VR - (V)
Fig. 9 Diode reverse bias safe operating area
1400
0.1
0.001
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
0.01
1
0.7
0.11
1.49
0.10
0.1
Pulse width, tp - (s)
3
14.61
45.60
24.74
38.58
1
4
9.84
143.02
30.01
113.97
10
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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2
3.87
3.14
8.42
3.21
7/9
DIM600BSS12-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
1(C)
2(E)
5(E1)
3(G1)
4(C1)
Nominal weight: 475g
Module outline type code: B
Fig. 11 Package details
8/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
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DYNEX SEMICONDUCTOR LTD
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Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
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© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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