HIRECT H2900CHXX Phase control thyristor Datasheet

PHASE CONTROL THYRISTOR H2900CHXX
Symbol
Characteristics
Conditions
TJ
(0C)
Value
Unit
125
200-2500
V
125
200-2500
V
125
125
200
200
mA
mA
2900
A
4550
A
39.20
kA
7683
kA2S
BLOCKING PARAMETERS
VRRM
VDRM
IRRM
IDRM
Repetitive
Repetitive
voltage
Repetitive
Repetitive
peak reverse voltage
peak off-stage
peak reverse current
peak off-state current
V = VRRM
V = VRRM
CONDUCTING PARAMETERS
IF(AV)
Average on-state current
IRMS
RMS on-state current
ITSM
Surge on-state current
I2 t
I2 t
VT
Peak on-state voltage drop
V0
R0
Threshold voltage
On-state slope resistance
180 sine, 50H Z,
TC = 780C
Sine wave,
10mS without
reverse voltage
125
On-state
current = 3kA
125
1.42
V
125
125
0.85
0.175
V
mΩ
25
25
25
400
3.50
1000
mA
V
mA
150
W
800
30
10
A/μSec
V
A
TRIGGERING PARAMETERS
IGT
VGT
IL
PG–PEAK
di/dt
VFGM
IFGM
Gate trigger current
Gate trigger voltage
Latching Current
Maximum Peak Gate Power
VD = 5V
VD = 5V
Pulse width
100μSec
Repetitive rate of rise of current
Maximum forward gate voltage
Maximum forward gate current
THERMAL & MECHANICAL PARAMETERS
R TH (J-C)
Thermal impedance, 180
conduction, Sine
RTH (C-HK)
Thermal impedance
TJ
TSTG
F
W
Junction to case
0.009
0
C/W
Case to
heatsink
0.002
0
C/W
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
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125
-40 - 125
45
1700
0
C
C
KN
gms
0
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PHASE CONTROL THYRISTOR H2900CHXX
All dimensions in mm
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PHASE CONTROL THYRISTOR H2900CHXX
On State Power Loss
8000
DC
7000
1200
Pt(av) - W
6000
600
5000
1800
4000
3000
2000
1000
0
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
It (av)
Maximum Permissible Case Temp
160
140
Tcase (0C)
120
100
80
60
40
20
1200
600
1800
DC
0
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
It(av) A
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PHASE CONTROL THYRISTOR H2900CHXX
Max non repetitive Surge Current
50000
45000
40000
I tsm (A)
35000
30000
25000
20000
15000
10000
5000
0
0.01
0.1
1
10
Tim e in Sec
Transient Thermal Impedance Junction to Case
0.01
0.009
0.008
Rth(j-c)
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
0.001
0.01
0.1
1
10
Tim e in Sec
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PHASE CONTROL THYRISTOR H2900CHXX
On State Characteristics
5000
4500
4000
I t(av) A
3500
3000
2500
2000
1500
1000
500
0
0
0.5
1
1.5
2
2.5
400
500
Vt (V)
Gate Trigger Characteristics
4
250C
V G(V) - V
3
2
1
0
0
100
200
300
IG (av) - A
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PHASE CONTROL THYRISTOR H2900CHXX
Ordering Information: H
Hirect make Thyristor
2900
IF(AV) = 2900A
CH
Capsule Thyristor
XX
VRRM = XX * 100
e.g.18 * 100 =1800V
Hind Rectifiers Ltd reserves the right to change the specifications without
notice.
This datasheet specifies technical information for semiconductor devices but
promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
Hind Rectifiers Ltd
Lake Road
Bhandup (West)
Mumbai – 400 078
Tel: - +91 22 2596 8027/28/29/31
Fax: - +91 22 2596 4114
E-mail: - [email protected]
Website: - www.hirect.com
HIND RECTIFIERS LTD
June-2008
6 of 6
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