AVAGO AMMP-6130 30 ghz power amplifier with frequency multiplier Datasheet

AMMP-6130
30 GHz Power Amplifier with Frequency Multiplier (x2)
in SMT Package
Data Sheet
Description
Features
Avago Technologies AMMP-6130 is a high gain, narrowband doubler and output power amplifier designed for
DBS applications and other commercial communication
systems. The MMIC takes an input 15 GHz signal and
passes it through a harmonic frequency multiplier (x2)
and then three stages of power amplification. Integrated
matching structures filter and match input/output to
50 Ω. It has integrated input and output DC blocking
capacitors and bias structures to all stages. The MMIC is
fabricated using PHEMT technology. The backside of this
package part is both RF and DC ground. This helps simply the assembly process and reduces assembly related
performance variations and costs. The surface mount
package allows elimination of “chip & wire” assembly for
lower cost. This MMIC is a cost effective alternative to hybrid (discrete-FET) amplifiers that require complex tuning
and assembly process.
•
•
•
•
•
Surface Mount Package, 5.0 x 5.0 x 1.25 mm
Integrated DC Block and Choke
50 Ω Input and Output Match
Single Positive Supply Pin
No Negative Gate Bias
Specifications (Vd=4.5V, Idd=200mA)
•
•
•
•
•
Frequency Range 15GHz in, 30GHz out
Output Power: 21 dBm
Harmonic Suppression: 60dBc
Single Positive Supply
DC Requirements: 4.5V, 200mA
Applications
NC
Vdd
NC
• Microwave Radio systems
• Satellite VSAT, DBS Up/Down Link
• Broadband Wireless Access)
1
2
3
Functional Block Diagram
Package Diagram
1
RF IN
8
4
7
6
5
NC
NC
NC
2
3
RF OUT
8
X2
4
7
6
5
Pin
1
2
3
4
5
6
7
8
Function
Vd
RF Out
RF In
PACKAGE
BASE
GND
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 80V
ESD Human Body Model = 250V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note: MSL Rating = Level 2A
Electrical Specifications
1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.
2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6220 published specifications.
3. This final package part performance is verified by a functional test correlated to actual performance at one or more
frequencies.
4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance
may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise
(Гopt) matching.
5. All tested parameters guaranteed with measurement accuracy +/-1dB/dBm/dBc
Table 1. RF Electrical Characteristics
Parameter
Min
Typ.
Max
Unit
Conversion Gain, Gain
14
16
18.5
dB
Operational Frequency, Freq
30
Output Power, Pout
18.5
Comment
GHz
21
21.5
dBm
Fundamental Suppression, FS
60
dBc
3rd Harmonic Suppression, 3H Sup
50
dBc
Tested at 29.25 and 30 GHz
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description
Min.
Drain Supply Current, Id
Drain Supply Voltage, Vd
3.5
Typical
Max.
Unit
Comments
200
250
mA
Vd = 4.5 V, Under any RF power drive and
temperature
4.5
5
V
Table 3. Thermal Properties
Parameter
Test Conditions
Value
Thermal Resistance, qjc
Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C
Thermal Resistance at backside temperature Tb=25°C
qjc = 27 °C/W
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description
Pin
Drain to Ground Supply Voltage
Min.
Max.
Unit
Vdd
5
V
Drain Current
Idd
300
mA
RF CW Input Power
Pin
15
dBm
+150
°C
+150
°C
+260
°C
Channel Temperature
Storage Temperature
Maximum Assembly Temperature
-65
Comments
CW
20 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2
AMMP-6130 Typical Performance
(TA = 25°C, Vdd=4.5V, Idd=200 mA, Zin = Zout = 50Ω, Pin=3dBm unless otherwise stated)
20
65
18
16
60
45
40
C.G.
2H-1H
6
4
35
14.5
15
15.5
Input Frequency [GHz]
16
29
22
20
2H [dBm]
20
18
4V
3.5V
5V
4.5V
30
30.5
29
31
29.5
24
0
20
-5
16
-10
12
8
14GHz
16GHz
15GHz
4
-6
-4
-2
0
2
4
22
2H [dBm]
20
18
-40C
25C
85C
12
29.5
30
30.5
Frequency [GHz]
Figure 7. Output Power vs. Output Freq @ Temp = 25C, -40C & 85C
3
-15
-20
-25
18
23
Frequency [GHz]
Figure 6. Input and Output Return Loss vs. Freq
24
29
S11[dB]
S22[dB]
13
Figure 5. Output Power vs. Input Power vs. Input Freq
14
31
-30
6
Pin [dBm]
16
30
30.5
Frequency [GHz]
Figure 4. Fundamental, 2H & 3H Output Power vs. Output Freq
Return Loss [dB]
2H [dBm]
Figure 3. Output Power vs. Output Frequency @ 4 bias levels
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
2H
1H
3H
Frequency [GHz]
0
31
10
0
29.5
30.5
15
5
12
29
30
Figure 2. Output Power vs. Output Frequency vs. Input Power
25
14
29.5
Output Frequency [GHz]
24
16
3dBm
5dBm
4dBm
14
25
Figure 1. Conversion Gain & Fundamental Sup vs. Input Freq
2H [dBm]
18
16
30
14
20
31
28
33
1H [dBm], 3H [dBm]
8
2H [dBm]
50
12
10
2H-1H [dBm]
C.G.[dB]
22
55
14
2
24
Biasing and Operation
The AMMP-6130 frequency doubler has been designed
with a fully integrated self bias network; thus, requiring
only a single 4.5v bias input with a typical current draw
of 200mA.
The one-stage frequency doubler relies on the non-linear
behavior of the FET to produce the doubled signal at
the output. A high-pass filter at the input shorts any
reflected 2nd harmonic signal to ground. The input also
consists of matching components tuned to 15GHz. An
additional LC-filter is included at the input for stability.
The doubler is operated at pinch-off to create a halfwave conduction angle ideal for generation of the 2nd
harmonic. The AMMP-6130 is also designed for stability
over temperature.
Figure 8. Evaluation / Test Board (Available to qualified customer requests)
C
C3
Port
Vd1
MLIN
TL10
Port
Vd2
MLIN
TL11
MLIN
TL12
MLOC
TL8
C
C2
Port
Input_15G
MLIN
TL3
MLIN
TL4
MLIN
HP_FET
TL7
HPFET1
MLIN
TL2
C
C9
C
C10
R
R1
Figure 9. Simplified Doubler-Amplifier Schematic
4
C
MLIN
C4
TL20
MLOC
TL9
MLIN
MLINTL14
TL17
R
R2
C
HP_FET
C5
HPFET2
MLIN
TL21
MLIN
TL15
MLIN
TL18
C
C
C11 C12
R
R5
R
R3
C
HP_FET
C6
HPFET3
MLIN
TL13
MLIN
TL22
MLIN
TL16
MLIN
TL19
C C
C C R
C15C13 C14 C16R6
R
R4
C
HP_FET C7
HPFET4
Port
Output_30G
Typical Scattering Parameters
Please refer to <http://www.avagotech.com> for typical scattering parameters data.
Package Dimension, PCB Layout and Tape and Reel information
Please refer to Avago Technologies Application Note 5520, AMxP-xxxx production Assembly Process (Land Pattern A).
AMMP-6130 Part Number Ordering Information
Part Number
Devices Per Container
Container
AMMP-6130-BLKG
10
Antistatic bag
AMMP-6130-TR1G
100
“7”” Reel”
AMMP-6130-TR2G
500
“7”” Reel”
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. Obsoletes AV01-0287EN
AV02-0514EN - July 9, 2013
Similar pages