GETEDZ ESJC37-10F High voltage silicon rectifier diode Datasheet

ESJC37-10F
350mA 10kV 80nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- ------INTRODUCE:
HVGT high voltage silicon rectifier diodes is made of
SHAPE DISPLAY:
high quality Silicon chip and high reliability epoxy
resin sealing structure, and through professional
testing equipment inspection qualified
customers.
after to
FEATURES:
1. High reliability design.
2. Low VF.
3. High frequency.
4. Conform to RoHS and SGS.
5. Epoxy resin molded in vacuumHave
SIZE: (Unit:mm)
HVGT
NAME:
DO-415
anticorrosion in the surface.
APPLICATIONS:
1. High voltage multiplier circuit
2. General purpose high voltage rectifier.
3. Rectification for X-ray generator high voltage
power supply.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.65 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value
Units
Repetitive Peak Renerse Voltage
VRRM
TA=25°C
10
kV
Non-Repetitive Peak Renerse Voltage
VRSM
TA=25°C
--
kV
Average Forward Current Maximum
IFAVM
TA=40°C
350
mA
TOIL=55°C
--
mA
Non-Repetitive Forward Surge Current
IFSM
TA=25°C; 50Hz Half-Sine Wave; 8.3mS
15
A
Junction Temperature
TJ
125
°C
Allowable Operation Case Temperature
Tc
-40~+125
°C
TSTG
-40~+125
°C
Storage Temperature
ELECTRICAL CHARACTERISTICS:
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
TA=25°C
(Unless Otherwise Specified)
Symbols
Condition
Data value
Units
VFM
at 25°C; at IFAVM
25
V
IR1
at 25°C; at VRRM
2.0
uA
IR2
at 100°C; at VRRM
10
uA
TRR
at 25°C; IF=0.5IR; IR =IFAVM; IRR =0.25IR
80
nS
CJ
at 25°C; VR=0V; f=1MHz
15
pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected]
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 1 / 2
ESJC37-10F
350mA 10kV 80nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- ------Fig 1
Fig 2
Forward Current Derating Curve
Reverse Recovery Measurement Waveform
Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
IR is typically the rated average forward current maximum
(IFAVM) of the D.U.T
Fig 3
Non-Repetitive Surge Current
Cycles (50Hz)
Marking
Type
Code
ESJC37-10F
ESJC37-10F
HVGT
Cathode Mark
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected]
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 2 / 2
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