ESJC37-10F 350mA 10kV 80nS High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------INTRODUCE: HVGT high voltage silicon rectifier diodes is made of SHAPE DISPLAY: high quality Silicon chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified customers. after to FEATURES: 1. High reliability design. 2. Low VF. 3. High frequency. 4. Conform to RoHS and SGS. 5. Epoxy resin molded in vacuumHave SIZE: (Unit:mm) HVGT NAME: DO-415 anticorrosion in the surface. APPLICATIONS: 1. High voltage multiplier circuit 2. General purpose high voltage rectifier. 3. Rectification for X-ray generator high voltage power supply. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 0.65 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 10 kV Non-Repetitive Peak Renerse Voltage VRSM TA=25°C -- kV Average Forward Current Maximum IFAVM TA=40°C 350 mA TOIL=55°C -- mA Non-Repetitive Forward Surge Current IFSM TA=25°C; 50Hz Half-Sine Wave; 8.3mS 15 A Junction Temperature TJ 125 °C Allowable Operation Case Temperature Tc -40~+125 °C TSTG -40~+125 °C Storage Temperature ELECTRICAL CHARACTERISTICS: Items Maximum Forward Voltage Drop Maximum Reverse Current Maximum Reverse Recovery Time Junction Capacitance TA=25°C (Unless Otherwise Specified) Symbols Condition Data value Units VFM at 25°C; at IFAVM 25 V IR1 at 25°C; at VRRM 2.0 uA IR2 at 100°C; at VRRM 10 uA TRR at 25°C; IF=0.5IR; IR =IFAVM; IRR =0.25IR 80 nS CJ at 25°C; VR=0V; f=1MHz 15 pF GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 1 / 2 ESJC37-10F 350mA 10kV 80nS High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------Fig 1 Fig 2 Forward Current Derating Curve Reverse Recovery Measurement Waveform Typical data capture points: IF =0.5IR , IR,IRR =0.25IR IR is typically the rated average forward current maximum (IFAVM) of the D.U.T Fig 3 Non-Repetitive Surge Current Cycles (50Hz) Marking Type Code ESJC37-10F ESJC37-10F HVGT Cathode Mark GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 2 / 2